CA1134464A - I.sup.2l sensing circuit with increased sensitivity - Google Patents

I.sup.2l sensing circuit with increased sensitivity

Info

Publication number
CA1134464A
CA1134464A CA000347708A CA347708A CA1134464A CA 1134464 A CA1134464 A CA 1134464A CA 000347708 A CA000347708 A CA 000347708A CA 347708 A CA347708 A CA 347708A CA 1134464 A CA1134464 A CA 1134464A
Authority
CA
Canada
Prior art keywords
circuit
bistable
injector
inputs
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000347708A
Other languages
English (en)
French (fr)
Inventor
Kent F. Smith
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arris Technology Inc
Original Assignee
General Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Instrument Corp filed Critical General Instrument Corp
Application granted granted Critical
Publication of CA1134464A publication Critical patent/CA1134464A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H03K3/288—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable using additional transistors in the input circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Static Random-Access Memory (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Logic Circuits (AREA)
  • Read Only Memory (AREA)
CA000347708A 1979-04-05 1980-03-14 I.sup.2l sensing circuit with increased sensitivity Expired CA1134464A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US27,507 1979-04-05
US06/027,507 US4297598A (en) 1979-04-05 1979-04-05 I2 L Sensing circuit with increased sensitivity

Publications (1)

Publication Number Publication Date
CA1134464A true CA1134464A (en) 1982-10-26

Family

ID=21838117

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000347708A Expired CA1134464A (en) 1979-04-05 1980-03-14 I.sup.2l sensing circuit with increased sensitivity

Country Status (6)

Country Link
US (1) US4297598A (OSRAM)
JP (1) JPS55135391A (OSRAM)
CA (1) CA1134464A (OSRAM)
DE (1) DE3012831C2 (OSRAM)
FR (1) FR2453414A1 (OSRAM)
GB (1) GB2047497B (OSRAM)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59914B2 (ja) * 1979-08-23 1984-01-09 富士通株式会社 半導体記憶装置
US4393473A (en) * 1981-07-13 1983-07-12 Fairchild Camera & Instrument Corp. Random access memory preset circuitry
GB2247550B (en) * 1990-06-29 1994-08-03 Digital Equipment Corp Bipolar transistor memory cell and method
US8780657B2 (en) * 2012-03-01 2014-07-15 Apple Inc. Memory with bit line current injection
US9201727B2 (en) 2013-01-15 2015-12-01 International Business Machines Corporation Error protection for a data bus
US9021328B2 (en) 2013-01-15 2015-04-28 International Business Machines Corporation Shared error protection for register banks
US9041428B2 (en) * 2013-01-15 2015-05-26 International Business Machines Corporation Placement of storage cells on an integrated circuit
US9043683B2 (en) 2013-01-23 2015-05-26 International Business Machines Corporation Error protection for integrated circuits

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3487376A (en) * 1965-12-29 1969-12-30 Honeywell Inc Plural emitter semiconductive storage device
GB1162109A (en) * 1966-12-22 1969-08-20 Ibm Semi Conductor Data and Storage Devices and Data Stores Employing Such Devices
DE1524873B2 (de) * 1967-10-05 1970-12-23 Ibm Deutschland Monolithische integrierte Speicherzelle mit kleiner Ruheleistung
US3986178A (en) * 1975-07-28 1976-10-12 Texas Instruments Integrated injection logic random access memory
US4006458A (en) * 1976-02-09 1977-02-01 Rockwell International Corporation Detector circuit

Also Published As

Publication number Publication date
FR2453414A1 (fr) 1980-10-31
FR2453414B1 (OSRAM) 1983-04-08
GB2047497A (en) 1980-11-26
US4297598A (en) 1981-10-27
GB2047497B (en) 1983-03-30
DE3012831A1 (de) 1980-10-16
DE3012831C2 (de) 1984-08-02
JPS55135391A (en) 1980-10-22

Similar Documents

Publication Publication Date Title
US4491937A (en) Multiport register file
US4817051A (en) Expandable multi-port random access memory
US5046050A (en) Shared BiCMOS sense amplifier
US4862421A (en) Sensing and decoding scheme for a BiCMOS read/write memory
US4839862A (en) Static random access memory having Bi-CMOS construction
CA1134464A (en) I.sup.2l sensing circuit with increased sensitivity
US3680061A (en) Integrated circuit bipolar random access memory system with low stand-by power consumption
US3354440A (en) Nondestructive memory array
US3427598A (en) Emitter gated memory cell
US3671772A (en) Difference amplifier
US5287314A (en) BICMOS sense amplifier with reverse bias protection
US3764825A (en) Active element memory
US3436738A (en) Plural emitter type active element memory
EP0031009B1 (en) Multiple access memory cell and its use in a memory array
US3820086A (en) Read only memory(rom)superimposed on read/write memory(ram)
US4596002A (en) Random access memory RAM employing complementary transistor switch (CTS) memory cells
JPS6322389B2 (OSRAM)
US4785422A (en) Simultaneous read/write RAM
EP0069227A2 (en) Integrated semiconductor memory and method for accessing and reading
JP3066330B2 (ja) メモリ回路のブロック書込みの間の電流制限
US3492661A (en) Monolithic associative memory cell
US4578779A (en) Voltage mode operation scheme for bipolar arrays
US4302823A (en) Differential charge sensing system
US5023842A (en) Semiconductor memory having improved sense amplifiers
US3529294A (en) Information switching and storage circuitry

Legal Events

Date Code Title Description
MKEX Expiry