CA1106477A - Overflow channel for charge transfer imaging devices - Google Patents
Overflow channel for charge transfer imaging devicesInfo
- Publication number
- CA1106477A CA1106477A CA161,619A CA161619A CA1106477A CA 1106477 A CA1106477 A CA 1106477A CA 161619 A CA161619 A CA 161619A CA 1106477 A CA1106477 A CA 1106477A
- Authority
- CA
- Canada
- Prior art keywords
- medium
- integration sites
- area
- region
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000012546 transfer Methods 0.000 title claims abstract description 52
- 238000003384 imaging method Methods 0.000 title claims abstract description 34
- 230000010354 integration Effects 0.000 claims abstract description 89
- 239000002800 charge carrier Substances 0.000 claims description 34
- 239000012535 impurity Substances 0.000 claims description 26
- 239000004065 semiconductor Substances 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 20
- 239000012212 insulator Substances 0.000 claims description 19
- 238000003860 storage Methods 0.000 claims description 18
- 238000001514 detection method Methods 0.000 claims description 7
- 239000000969 carrier Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims 6
- 230000004888 barrier function Effects 0.000 claims 3
- 230000005284 excitation Effects 0.000 claims 3
- 238000005036 potential barrier Methods 0.000 claims 1
- 238000009825 accumulation Methods 0.000 abstract 1
- 239000004020 conductor Substances 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 241001663154 Electron Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000005574 cross-species transmission Effects 0.000 description 1
- AMHIJMKZPBMCKI-PKLGAXGESA-N ctds Chemical compound O[C@@H]1[C@@H](OS(O)(=O)=O)[C@@H]2O[C@H](COS(O)(=O)=O)[C@H]1O[C@H]([C@@H]([C@H]1OS(O)(=O)=O)OS(O)(=O)=O)O[C@H](CO)[C@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O2 AMHIJMKZPBMCKI-PKLGAXGESA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/335—Channel regions of field-effect devices of charge-coupled devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US27033872A | 1972-07-10 | 1972-07-10 | |
| US270,338 | 1988-11-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1106477A true CA1106477A (en) | 1981-08-04 |
Family
ID=23030921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA161,619A Expired CA1106477A (en) | 1972-07-10 | 1973-01-19 | Overflow channel for charge transfer imaging devices |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS5222495B2 (enrdf_load_stackoverflow) |
| BE (1) | BE802002A (enrdf_load_stackoverflow) |
| CA (1) | CA1106477A (enrdf_load_stackoverflow) |
| DE (1) | DE2334116C3 (enrdf_load_stackoverflow) |
| FR (1) | FR2197287B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1413092A (enrdf_load_stackoverflow) |
| IT (1) | IT991964B (enrdf_load_stackoverflow) |
| NL (1) | NL165607C (enrdf_load_stackoverflow) |
| SE (1) | SE382148B (enrdf_load_stackoverflow) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49131525A (enrdf_load_stackoverflow) * | 1973-04-05 | 1974-12-17 | ||
| US3866067A (en) * | 1973-05-21 | 1975-02-11 | Fairchild Camera Instr Co | Charge coupled device with exposure and antiblooming control |
| JPS5140790A (enrdf_load_stackoverflow) * | 1974-10-04 | 1976-04-05 | Oki Electric Ind Co Ltd | |
| JPS5732547B2 (enrdf_load_stackoverflow) * | 1974-12-25 | 1982-07-12 | ||
| DE2813254C2 (de) * | 1978-03-28 | 1979-12-06 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Eindimensionaler CCD-Sensor mit Überlaufvorrichtung |
| JPS5847378A (ja) * | 1981-09-17 | 1983-03-19 | Canon Inc | 撮像素子 |
| JPS60244064A (ja) * | 1984-05-18 | 1985-12-03 | Nec Corp | 固体撮像装置 |
| JPS60163876U (ja) * | 1985-03-06 | 1985-10-31 | 富士通株式会社 | 半導体撮像装置 |
| GB2181012B (en) * | 1985-09-20 | 1989-09-13 | Philips Electronic Associated | Imaging devices comprising photovoltaic detector elements |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1566558A (enrdf_load_stackoverflow) * | 1968-03-20 | 1969-05-09 | ||
| IE34899B1 (en) * | 1970-02-16 | 1975-09-17 | Western Electric Co | Improvements in or relating to semiconductor devices |
| FR2101023B1 (enrdf_load_stackoverflow) * | 1970-08-07 | 1973-11-23 | Thomson Csf |
-
1973
- 1973-01-19 CA CA161,619A patent/CA1106477A/en not_active Expired
- 1973-07-02 SE SE7309285A patent/SE382148B/xx unknown
- 1973-07-04 NL NL7309340.A patent/NL165607C/xx not_active IP Right Cessation
- 1973-07-04 GB GB3178373A patent/GB1413092A/en not_active Expired
- 1973-07-05 DE DE2334116A patent/DE2334116C3/de not_active Expired
- 1973-07-05 IT IT51274/73A patent/IT991964B/it active
- 1973-07-05 FR FR7324749A patent/FR2197287B1/fr not_active Expired
- 1973-07-06 BE BE133191A patent/BE802002A/xx not_active IP Right Cessation
- 1973-07-10 JP JP48077186A patent/JPS5222495B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2197287B1 (enrdf_load_stackoverflow) | 1976-05-28 |
| NL7309340A (enrdf_load_stackoverflow) | 1974-01-14 |
| GB1413092A (en) | 1975-11-05 |
| NL165607C (nl) | 1981-04-15 |
| SE382148B (sv) | 1976-01-12 |
| JPS5222495B2 (enrdf_load_stackoverflow) | 1977-06-17 |
| IT991964B (it) | 1975-08-30 |
| DE2334116B2 (de) | 1977-06-30 |
| JPS4946625A (enrdf_load_stackoverflow) | 1974-05-04 |
| NL165607B (nl) | 1980-11-17 |
| DE2334116C3 (de) | 1983-11-10 |
| FR2197287A1 (enrdf_load_stackoverflow) | 1974-03-22 |
| DE2334116A1 (de) | 1974-01-31 |
| BE802002A (fr) | 1973-11-05 |
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|---|---|---|
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| JP3200436B2 (ja) | Ｃｃｄ撮像器及びその駆動方法 | |
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| US3864722A (en) | Radiation sensing arrays | |
| US5130774A (en) | Antiblooming structure for solid-state image sensor | |
| EP0544260A1 (en) | Antiblooming structure for CCD image sensor | |
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| US4975777A (en) | Charge-coupled imager with dual gate anti-blooming structure | |
| CA1106477A (en) | Overflow channel for charge transfer imaging devices | |
| JPH0454987B2 (enrdf_load_stackoverflow) | ||
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| EP0059547B1 (en) | Clock controlled anti-blooming for virtual phase ccd's | |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |