CA1100390A - N-conductivity silicon monocrystals produced by neutron irradiation - Google Patents

N-conductivity silicon monocrystals produced by neutron irradiation

Info

Publication number
CA1100390A
CA1100390A CA215,114A CA215114A CA1100390A CA 1100390 A CA1100390 A CA 1100390A CA 215114 A CA215114 A CA 215114A CA 1100390 A CA1100390 A CA 1100390A
Authority
CA
Canada
Prior art keywords
silicon
concentration
neutron irradiation
initial material
silicon monocrystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA215,114A
Other languages
English (en)
French (fr)
Other versions
CA215114S (en
Inventor
Konrad Reuschel
Manfred Schnoller
Alfred Muhlbauer
Eberhard Spenke
Wolfgang Keller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of CA1100390A publication Critical patent/CA1100390A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/261—Bombardment with radiation to produce a nuclear reaction transmuting chemical elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/165—Transmutation doping

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CA215,114A 1973-12-14 1974-12-03 N-conductivity silicon monocrystals produced by neutron irradiation Expired CA1100390A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEP2362264.2 1973-12-14
DE19732362264 DE2362264B2 (de) 1973-12-14 1973-12-14 Verfahren zum herstellen von homogen n-dotierten siliciumeinkristallen durch bestrahlung mit thermischen neutronen

Publications (1)

Publication Number Publication Date
CA1100390A true CA1100390A (en) 1981-05-05

Family

ID=5900797

Family Applications (1)

Application Number Title Priority Date Filing Date
CA215,114A Expired CA1100390A (en) 1973-12-14 1974-12-03 N-conductivity silicon monocrystals produced by neutron irradiation

Country Status (4)

Country Link
US (1) US4027051A (enExample)
JP (1) JPS5094880A (enExample)
CA (1) CA1100390A (enExample)
DE (1) DE2362264B2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4129463A (en) * 1977-06-29 1978-12-12 The United States Of America As Represented By The United States Department Of Energy Polycrystalline silicon semiconducting material by nuclear transmutation doping
DE2753488C2 (de) * 1977-12-01 1986-06-19 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung von n-dotiertem Silicium durch Neutronenbestrahlung
US4348351A (en) * 1980-04-21 1982-09-07 Monsanto Company Method for producing neutron doped silicon having controlled dopant variation
JPS5958866A (ja) * 1982-09-28 1984-04-04 Mitsubishi Electric Corp サイリスタ
US4836788A (en) * 1985-11-12 1989-06-06 Sony Corporation Production of solid-state image pick-up device with uniform distribution of dopants
JP2562579B2 (ja) * 1986-03-27 1996-12-11 コマツ電子金属株式会社 単結晶の製造方法
DE3714357C2 (de) * 1986-04-30 1994-02-03 Toshiba Ceramics Co Siliciumwafer und Verfahren zu dessen Herstellung und Siliziumwafer-Auswahleinrichtung
US4857259A (en) * 1986-05-16 1989-08-15 Westinghouse Electric Corp. Neutron dosimeter
US6100168A (en) * 1998-11-16 2000-08-08 Industrial Technology Research Institute Location selective transmutation doping on silicon wafers using high energy deuterons
DE102013216195B4 (de) * 2013-08-14 2015-10-29 Infineon Technologies Ag Verfahren zur Nachdotierung einer Halbleiterscheibe
JP6442899B2 (ja) * 2014-07-30 2018-12-26 セイコーエプソン株式会社 振動デバイス、電子機器、および移動体
US10290752B1 (en) * 2016-05-04 2019-05-14 St3 Llc Methods of doping semiconductor materials and metastable doped semiconductor materials produced thereby

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL258192A (enExample) * 1959-12-15

Also Published As

Publication number Publication date
US4027051A (en) 1977-05-31
DE2362264B2 (de) 1977-11-03
JPS5094880A (enExample) 1975-07-28
DE2362264A1 (de) 1975-06-19

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