CA1096042A - Introducing signal to charge-coupled circuit - Google Patents
Introducing signal to charge-coupled circuitInfo
- Publication number
- CA1096042A CA1096042A CA194,315A CA194315A CA1096042A CA 1096042 A CA1096042 A CA 1096042A CA 194315 A CA194315 A CA 194315A CA 1096042 A CA1096042 A CA 1096042A
- Authority
- CA
- Canada
- Prior art keywords
- potential
- region
- electrode
- charge
- electrode means
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 32
- 239000002800 charge carrier Substances 0.000 claims description 27
- 238000005036 potential barrier Methods 0.000 claims description 10
- 239000000969 carrier Substances 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000009825 accumulation Methods 0.000 claims 2
- 230000003334 potential effect Effects 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 abstract description 13
- 238000000034 method Methods 0.000 description 11
- 230000008859 change Effects 0.000 description 7
- 238000005192 partition Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 230000000644 propagated effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000012552 review Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000003389 potentiating effect Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76808—Input structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76866—Surface Channel CCD
- H01L29/76875—Two-Phase CCD
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Networks Using Active Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US36958073A | 1973-06-13 | 1973-06-13 | |
US369,580 | 1973-06-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1096042A true CA1096042A (en) | 1981-02-17 |
Family
ID=23456040
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA194,315A Expired CA1096042A (en) | 1973-06-13 | 1974-03-07 | Introducing signal to charge-coupled circuit |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS548428B2 (ja) |
CA (1) | CA1096042A (ja) |
DE (1) | DE2411606A1 (ja) |
FR (1) | FR2233713A1 (ja) |
GB (1) | GB1456255A (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5653865B2 (ja) * | 1973-11-07 | 1981-12-22 | ||
DE2543615A1 (de) * | 1975-09-30 | 1977-04-07 | Siemens Ag | Regenerierstufe fuer ladungsverschiebeanordnungen |
US4191895A (en) * | 1976-07-26 | 1980-03-04 | Rca Corporation | Low noise CCD input circuit |
US4191896A (en) * | 1976-07-26 | 1980-03-04 | Rca Corporation | Low noise CCD input circuit |
NL7610351A (nl) * | 1976-09-17 | 1978-03-21 | Philips Nv | Ladingsoverdrachtinrichting. |
JPS5353278A (en) * | 1976-10-25 | 1978-05-15 | Fujitsu Ltd | Facet zero input system for charge transfer device |
JPS5780773A (en) * | 1980-11-07 | 1982-05-20 | Nec Corp | Charge coupled device and driving method therefor |
JPS5848464A (ja) * | 1981-09-17 | 1983-03-22 | Nec Corp | 電荷転送装置 |
DD231682A1 (de) * | 1984-12-20 | 1986-01-02 | Werk Fernsehelektronik Veb | Eingangsschaltung fuer ladungsgekoppelte bauelemente |
-
1974
- 1974-03-07 GB GB1023174A patent/GB1456255A/en not_active Expired
- 1974-03-07 CA CA194,315A patent/CA1096042A/en not_active Expired
- 1974-03-08 FR FR7407987A patent/FR2233713A1/fr not_active Withdrawn
- 1974-03-11 DE DE2411606A patent/DE2411606A1/de active Pending
- 1974-03-12 JP JP2848074A patent/JPS548428B2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS5017940A (ja) | 1975-02-25 |
JPS548428B2 (ja) | 1979-04-16 |
FR2233713A1 (ja) | 1975-01-10 |
DE2411606A1 (de) | 1975-01-09 |
GB1456255A (en) | 1976-11-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MKEX | Expiry |