CA1086866A - Thyristor a protection entegree contre les defaillances de conduction en recouvrement - Google Patents
Thyristor a protection entegree contre les defaillances de conduction en recouvrementInfo
- Publication number
- CA1086866A CA1086866A CA280,370A CA280370A CA1086866A CA 1086866 A CA1086866 A CA 1086866A CA 280370 A CA280370 A CA 280370A CA 1086866 A CA1086866 A CA 1086866A
- Authority
- CA
- Canada
- Prior art keywords
- region
- gate
- thyristor
- subtransistor
- carrier lifetime
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000002800 charge carrier Substances 0.000 claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 17
- 239000010703 silicon Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 description 25
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 9
- 239000012535 impurity Substances 0.000 description 8
- 230000007547 defect Effects 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 230000001419 dependent effect Effects 0.000 description 3
- 230000014509 gene expression Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 150000001768 cations Chemical class 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 241000478345 Afer Species 0.000 description 1
- 244000187656 Eucalyptus cornuta Species 0.000 description 1
- 241000283986 Lepus Species 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US77271277A | 1977-02-28 | 1977-02-28 | |
| US772,712 | 1977-02-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1086866A true CA1086866A (fr) | 1980-09-30 |
Family
ID=25095976
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA280,370A Expired CA1086866A (fr) | 1977-02-28 | 1977-06-13 | Thyristor a protection entegree contre les defaillances de conduction en recouvrement |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS53106584A (fr) |
| CA (1) | CA1086866A (fr) |
| DE (1) | DE2738152A1 (fr) |
| GB (1) | GB1588534A (fr) |
| SE (1) | SE7707114L (fr) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0108961B1 (fr) * | 1982-11-15 | 1987-01-14 | Kabushiki Kaisha Toshiba | Dispositif à thyristor protégé contre la surtension |
| GB8717695D0 (en) * | 1987-07-25 | 1987-09-03 | Marconi Electronic Devices | Thyristors |
| DE3927899A1 (de) * | 1989-08-24 | 1991-02-28 | Eupec Gmbh & Co Kg | Thyristor und verfahren zu seiner herstellung |
| EP0419898B1 (fr) * | 1989-09-28 | 2000-05-31 | Siemens Aktiengesellschaft | Méthode pour augmenter la tenue en tension d'un dispositif semi-conducteur à plusieurs couches |
| DE10330571B8 (de) * | 2003-07-07 | 2007-03-08 | Infineon Technologies Ag | Vertikale Leistungshalbleiterbauelemente mit Injektionsdämpfungsmittel im Rand bereich und Herstellungsverfahren dafür |
| CN110265510B (zh) * | 2019-07-10 | 2024-04-05 | 兰州大学 | 一种深结雪崩倍增光控晶闸管及其触发控制系统 |
-
1977
- 1977-06-13 CA CA280,370A patent/CA1086866A/fr not_active Expired
- 1977-06-20 SE SE7707114A patent/SE7707114L/xx unknown
- 1977-06-27 GB GB26777/77A patent/GB1588534A/en not_active Expired
- 1977-08-24 DE DE19772738152 patent/DE2738152A1/de not_active Withdrawn
- 1977-09-13 JP JP11041477A patent/JPS53106584A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| SE7707114L (sv) | 1978-08-29 |
| JPS53106584A (en) | 1978-09-16 |
| GB1588534A (en) | 1981-04-23 |
| DE2738152A1 (de) | 1978-08-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |