CA1068012A - Metal semiconductor contracts for high frequency devices - Google Patents
Metal semiconductor contracts for high frequency devicesInfo
- Publication number
- CA1068012A CA1068012A CA262,719A CA262719A CA1068012A CA 1068012 A CA1068012 A CA 1068012A CA 262719 A CA262719 A CA 262719A CA 1068012 A CA1068012 A CA 1068012A
- Authority
- CA
- Canada
- Prior art keywords
- layer
- island
- semiconductor
- metal
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 53
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 25
- 239000002184 metal Substances 0.000 title claims abstract description 25
- 230000000873 masking effect Effects 0.000 claims abstract description 16
- 238000010849 ion bombardment Methods 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 27
- 238000004519 manufacturing process Methods 0.000 claims description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 12
- 239000010931 gold Substances 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 abstract description 11
- 239000010410 layer Substances 0.000 description 54
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 239000004922 lacquer Substances 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical group [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 5
- 239000000126 substance Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- ZNKMCMOJCDFGFT-UHFFFAOYSA-N gold titanium Chemical compound [Ti].[Au] ZNKMCMOJCDFGFT-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920000136 polysorbate Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910001258 titanium gold Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7531520A FR2328284A1 (fr) | 1975-10-15 | 1975-10-15 | Diode fonctionnant dans le domaine des ondes millimetriques et son procede de fabrication |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1068012A true CA1068012A (en) | 1979-12-11 |
Family
ID=9161218
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA262,719A Expired CA1068012A (en) | 1975-10-15 | 1976-10-05 | Metal semiconductor contracts for high frequency devices |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4052269A (enExample) |
| JP (1) | JPS5248977A (enExample) |
| AU (1) | AU500263B2 (enExample) |
| CA (1) | CA1068012A (enExample) |
| DE (1) | DE2645425A1 (enExample) |
| FR (1) | FR2328284A1 (enExample) |
| GB (1) | GB1557808A (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4168213A (en) * | 1976-04-29 | 1979-09-18 | U.S. Philips Corporation | Field emission device and method of forming same |
| IT1068248B (it) * | 1976-11-16 | 1985-03-21 | Selenia Ind Elettroniche | Procedimento per la realizzazione di dispositivi a semiconduttore passivati con dissipatore di calore integrato |
| JPS55110038A (en) * | 1979-02-19 | 1980-08-25 | Nippon Telegr & Teleph Corp <Ntt> | Method for making electrode |
| US4759822A (en) * | 1984-10-12 | 1988-07-26 | Triquint Semiconductor Inc. | Methods for producing an aperture in a surface |
| WO2025023859A1 (ru) * | 2023-07-24 | 2025-01-30 | Общество с ограниченной ответственностью "Терагерцовая фотоника" | Детектор терагерцового излучения |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1952632A1 (de) * | 1969-10-18 | 1971-04-22 | Licentia Gmbh | Verfahren zum Herstellen einer Diffusionszone |
| BE792908A (fr) * | 1971-12-20 | 1973-04-16 | Western Electric Co | Procede de fabrication de dispositifs semi-conducteurs |
| JPS4885440A (enExample) * | 1972-02-18 | 1973-11-13 | ||
| US3880684A (en) * | 1973-08-03 | 1975-04-29 | Mitsubishi Electric Corp | Process for preparing semiconductor |
-
1975
- 1975-10-15 FR FR7531520A patent/FR2328284A1/fr active Granted
-
1976
- 1976-10-05 CA CA262,719A patent/CA1068012A/en not_active Expired
- 1976-10-08 US US05/730,939 patent/US4052269A/en not_active Expired - Lifetime
- 1976-10-08 DE DE19762645425 patent/DE2645425A1/de not_active Withdrawn
- 1976-10-12 GB GB42329/76A patent/GB1557808A/en not_active Expired
- 1976-10-13 AU AU18652/76A patent/AU500263B2/en not_active Expired
- 1976-10-13 JP JP51121971A patent/JPS5248977A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| AU1865276A (en) | 1978-04-20 |
| JPS5710579B2 (enExample) | 1982-02-26 |
| US4052269A (en) | 1977-10-04 |
| DE2645425A1 (de) | 1977-04-28 |
| AU500263B2 (en) | 1979-05-17 |
| FR2328284B1 (enExample) | 1982-09-10 |
| JPS5248977A (en) | 1977-04-19 |
| FR2328284A1 (fr) | 1977-05-13 |
| GB1557808A (en) | 1979-12-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3184493B2 (ja) | 電子装置の製造方法 | |
| US4418470A (en) | Method for fabricating silicon-on-sapphire monolithic microwave integrated circuits | |
| US6268619B1 (en) | Semiconductor device with high aspect ratio via hole including solder repelling coating | |
| US6552383B2 (en) | Integrated decoupling capacitors | |
| KR101831219B1 (ko) | 수직 핀 다이오드의 제조방법 | |
| US4536469A (en) | Semiconductor structures and manufacturing methods | |
| US5105242A (en) | Field effect transistor having schottky contact and a high frequency characteristic | |
| US5041881A (en) | Whiskerless Schottky diode | |
| EP2024990B1 (en) | Method of increasing the quality factor of an inductor in a semiconductor device | |
| CA1184320A (en) | Schottky-barrier gate field effect transistor and a process for the production of the same | |
| KR100890716B1 (ko) | 반도체 부품을 제조하는 방법 및 그 반도체 부품 | |
| CA1068012A (en) | Metal semiconductor contracts for high frequency devices | |
| US4596070A (en) | Interdigitated IMPATT devices | |
| US10304789B2 (en) | LDMOS transistor structure and method of manufacture | |
| EP0296658B1 (en) | Semiconductor device comprising a capacitor and a buried passivation layer | |
| JPH08222695A (ja) | インダクタ素子及びその製造方法 | |
| US6323533B1 (en) | Semiconductor device with an operating frequency larger than 50 MHz comprising a body composed of a soft ferrite material | |
| CN117790575A (zh) | 基于氧化镓衬底的环栅场效应晶体管及其制备方法 | |
| CN115425112A (zh) | 一种高可靠InP台面光电探测器及其制备方法 | |
| CN1951004A (zh) | 电子装置 | |
| US20090302419A1 (en) | Method of modifying surface area and electronic device | |
| KR20180037878A (ko) | 반도체 소자 및 이의 제조 방법 | |
| JP3093408B2 (ja) | 電極と配線との組み合わせ構造の形成方法 | |
| US7307329B2 (en) | Electronic device with guard ring | |
| US4143384A (en) | Low parasitic capacitance diode |