JPS5710579B2 - - Google Patents
Info
- Publication number
- JPS5710579B2 JPS5710579B2 JP12197176A JP12197176A JPS5710579B2 JP S5710579 B2 JPS5710579 B2 JP S5710579B2 JP 12197176 A JP12197176 A JP 12197176A JP 12197176 A JP12197176 A JP 12197176A JP S5710579 B2 JPS5710579 B2 JP S5710579B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7531520A FR2328284A1 (fr) | 1975-10-15 | 1975-10-15 | Diode fonctionnant dans le domaine des ondes millimetriques et son procede de fabrication |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5248977A JPS5248977A (en) | 1977-04-19 |
| JPS5710579B2 true JPS5710579B2 (enExample) | 1982-02-26 |
Family
ID=9161218
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51121971A Granted JPS5248977A (en) | 1975-10-15 | 1976-10-13 | Method of manufacturing semiconductor device |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4052269A (enExample) |
| JP (1) | JPS5248977A (enExample) |
| AU (1) | AU500263B2 (enExample) |
| CA (1) | CA1068012A (enExample) |
| DE (1) | DE2645425A1 (enExample) |
| FR (1) | FR2328284A1 (enExample) |
| GB (1) | GB1557808A (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4168213A (en) * | 1976-04-29 | 1979-09-18 | U.S. Philips Corporation | Field emission device and method of forming same |
| IT1068248B (it) * | 1976-11-16 | 1985-03-21 | Selenia Ind Elettroniche | Procedimento per la realizzazione di dispositivi a semiconduttore passivati con dissipatore di calore integrato |
| JPS55110038A (en) * | 1979-02-19 | 1980-08-25 | Nippon Telegr & Teleph Corp <Ntt> | Method for making electrode |
| US4759822A (en) * | 1984-10-12 | 1988-07-26 | Triquint Semiconductor Inc. | Methods for producing an aperture in a surface |
| WO2025023859A1 (ru) * | 2023-07-24 | 2025-01-30 | Общество с ограниченной ответственностью "Терагерцовая фотоника" | Детектор терагерцового излучения |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1952632A1 (de) * | 1969-10-18 | 1971-04-22 | Licentia Gmbh | Verfahren zum Herstellen einer Diffusionszone |
| BE792908A (fr) * | 1971-12-20 | 1973-04-16 | Western Electric Co | Procede de fabrication de dispositifs semi-conducteurs |
| JPS4885440A (enExample) * | 1972-02-18 | 1973-11-13 | ||
| US3880684A (en) * | 1973-08-03 | 1975-04-29 | Mitsubishi Electric Corp | Process for preparing semiconductor |
-
1975
- 1975-10-15 FR FR7531520A patent/FR2328284A1/fr active Granted
-
1976
- 1976-10-05 CA CA262,719A patent/CA1068012A/en not_active Expired
- 1976-10-08 US US05/730,939 patent/US4052269A/en not_active Expired - Lifetime
- 1976-10-08 DE DE19762645425 patent/DE2645425A1/de not_active Withdrawn
- 1976-10-12 GB GB42329/76A patent/GB1557808A/en not_active Expired
- 1976-10-13 AU AU18652/76A patent/AU500263B2/en not_active Expired
- 1976-10-13 JP JP51121971A patent/JPS5248977A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| AU1865276A (en) | 1978-04-20 |
| CA1068012A (en) | 1979-12-11 |
| US4052269A (en) | 1977-10-04 |
| DE2645425A1 (de) | 1977-04-28 |
| AU500263B2 (en) | 1979-05-17 |
| FR2328284B1 (enExample) | 1982-09-10 |
| JPS5248977A (en) | 1977-04-19 |
| FR2328284A1 (fr) | 1977-05-13 |
| GB1557808A (en) | 1979-12-12 |