CA1061884A - Optoelectronic device having improved integration density and photocoupling efficiency - Google Patents

Optoelectronic device having improved integration density and photocoupling efficiency

Info

Publication number
CA1061884A
CA1061884A CA263,453A CA263453A CA1061884A CA 1061884 A CA1061884 A CA 1061884A CA 263453 A CA263453 A CA 263453A CA 1061884 A CA1061884 A CA 1061884A
Authority
CA
Canada
Prior art keywords
light emitting
light
zones
signal
leads
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA263,453A
Other languages
English (en)
French (fr)
Inventor
Tatsuya Kamei
Yoshitaka Sugawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of CA1061884A publication Critical patent/CA1061884A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/13—Modifications for switching at zero crossing
    • H03K17/136—Modifications for switching at zero crossing in thyristor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips

Landscapes

  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
CA263,453A 1975-11-07 1976-10-15 Optoelectronic device having improved integration density and photocoupling efficiency Expired CA1061884A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13292475A JPS5257789A (en) 1975-11-07 1975-11-07 Photo coupled semiconductor device

Publications (1)

Publication Number Publication Date
CA1061884A true CA1061884A (en) 1979-09-04

Family

ID=15092682

Family Applications (1)

Application Number Title Priority Date Filing Date
CA263,453A Expired CA1061884A (en) 1975-11-07 1976-10-15 Optoelectronic device having improved integration density and photocoupling efficiency

Country Status (4)

Country Link
JP (1) JPS5257789A (mo)
CA (1) CA1061884A (mo)
DE (1) DE2650770C3 (mo)
NL (1) NL171758C (mo)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7855425B2 (en) 2007-03-09 2010-12-21 Sanyo Electric Co., Ltd. Semiconductor device and method of manufacturing the same
US8188497B2 (en) 2007-02-02 2012-05-29 Sanyo Semiconductor Co., Ltd. Semiconductor device and method of manufacturing the same

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3128187A1 (de) * 1981-07-16 1983-02-03 Joachim 8068 Pfaffenhofen Sieg Opto-elektronisches bauelement
JP6371725B2 (ja) * 2015-03-13 2018-08-08 株式会社東芝 半導体モジュール

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8188497B2 (en) 2007-02-02 2012-05-29 Sanyo Semiconductor Co., Ltd. Semiconductor device and method of manufacturing the same
US7855425B2 (en) 2007-03-09 2010-12-21 Sanyo Electric Co., Ltd. Semiconductor device and method of manufacturing the same

Also Published As

Publication number Publication date
JPS5257789A (en) 1977-05-12
NL171758C (nl) 1983-05-02
DE2650770A1 (de) 1977-05-18
NL7612271A (nl) 1977-05-10
NL171758B (nl) 1982-12-01
DE2650770B2 (de) 1980-06-12
JPS557709B2 (mo) 1980-02-27
DE2650770C3 (de) 1981-02-26

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