CA1061884A - Optoelectronic device having improved integration density and photocoupling efficiency - Google Patents
Optoelectronic device having improved integration density and photocoupling efficiencyInfo
- Publication number
- CA1061884A CA1061884A CA263,453A CA263453A CA1061884A CA 1061884 A CA1061884 A CA 1061884A CA 263453 A CA263453 A CA 263453A CA 1061884 A CA1061884 A CA 1061884A
- Authority
- CA
- Canada
- Prior art keywords
- light emitting
- light
- zones
- signal
- leads
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
- H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/13—Modifications for switching at zero crossing
- H03K17/136—Modifications for switching at zero crossing in thyristor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
Landscapes
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13292475A JPS5257789A (en) | 1975-11-07 | 1975-11-07 | Photo coupled semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1061884A true CA1061884A (en) | 1979-09-04 |
Family
ID=15092682
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA263,453A Expired CA1061884A (en) | 1975-11-07 | 1976-10-15 | Optoelectronic device having improved integration density and photocoupling efficiency |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5257789A (enExample) |
| CA (1) | CA1061884A (enExample) |
| DE (1) | DE2650770C3 (enExample) |
| NL (1) | NL171758C (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7855425B2 (en) | 2007-03-09 | 2010-12-21 | Sanyo Electric Co., Ltd. | Semiconductor device and method of manufacturing the same |
| US8188497B2 (en) | 2007-02-02 | 2012-05-29 | Sanyo Semiconductor Co., Ltd. | Semiconductor device and method of manufacturing the same |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3128187A1 (de) * | 1981-07-16 | 1983-02-03 | Joachim 8068 Pfaffenhofen Sieg | Opto-elektronisches bauelement |
| JP6371725B2 (ja) * | 2015-03-13 | 2018-08-08 | 株式会社東芝 | 半導体モジュール |
-
1975
- 1975-11-07 JP JP13292475A patent/JPS5257789A/ja active Granted
-
1976
- 1976-10-15 CA CA263,453A patent/CA1061884A/en not_active Expired
- 1976-11-04 NL NL7612271A patent/NL171758C/xx not_active IP Right Cessation
- 1976-11-05 DE DE2650770A patent/DE2650770C3/de not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8188497B2 (en) | 2007-02-02 | 2012-05-29 | Sanyo Semiconductor Co., Ltd. | Semiconductor device and method of manufacturing the same |
| US7855425B2 (en) | 2007-03-09 | 2010-12-21 | Sanyo Electric Co., Ltd. | Semiconductor device and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS557709B2 (enExample) | 1980-02-27 |
| DE2650770C3 (de) | 1981-02-26 |
| JPS5257789A (en) | 1977-05-12 |
| DE2650770B2 (de) | 1980-06-12 |
| NL7612271A (nl) | 1977-05-10 |
| NL171758B (nl) | 1982-12-01 |
| NL171758C (nl) | 1983-05-02 |
| DE2650770A1 (de) | 1977-05-18 |
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