CA1048161A - Aluminium diffusion method for semiconductors - Google Patents
Aluminium diffusion method for semiconductorsInfo
- Publication number
- CA1048161A CA1048161A CA248,047A CA248047A CA1048161A CA 1048161 A CA1048161 A CA 1048161A CA 248047 A CA248047 A CA 248047A CA 1048161 A CA1048161 A CA 1048161A
- Authority
- CA
- Canada
- Prior art keywords
- aluminium
- deep
- diffusion
- type
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004411 aluminium Substances 0.000 title claims abstract description 147
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 147
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 145
- 238000009792 diffusion process Methods 0.000 title claims abstract description 85
- 239000004065 semiconductor Substances 0.000 title claims abstract description 54
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 38
- 239000010703 silicon Substances 0.000 claims abstract description 38
- 230000001590 oxidative effect Effects 0.000 claims abstract description 28
- 239000012298 atmosphere Substances 0.000 claims abstract description 27
- 239000010410 layer Substances 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 27
- 238000005275 alloying Methods 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 15
- 239000002019 doping agent Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 239000002344 surface layer Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 abstract description 5
- 238000011109 contamination Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 33
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 229940037003 alum Drugs 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000007743 anodising Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 241000478345 Afer Species 0.000 description 1
- 241000027294 Fusi Species 0.000 description 1
- 241000791420 Plica Species 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001398 aluminium Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- AWSBQWZZLBPUQH-UHFFFAOYSA-N mdat Chemical compound C1=C2CC(N)CCC2=CC2=C1OCO2 AWSBQWZZLBPUQH-UHFFFAOYSA-N 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/033—Diffusion of aluminum
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/92—Controlling diffusion profile by oxidation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
- Element Separation (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB12649/75A GB1536545A (en) | 1975-03-26 | 1975-03-26 | Semiconductor device manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1048161A true CA1048161A (en) | 1979-02-06 |
Family
ID=10008581
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA248,047A Expired CA1048161A (en) | 1975-03-26 | 1976-03-16 | Aluminium diffusion method for semiconductors |
Country Status (12)
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS522165A (en) * | 1975-06-23 | 1977-01-08 | Mitsubishi Electric Corp | Method of thermally diffusing selectively aluminum of semiconductor su bstrate |
| US4063272A (en) * | 1975-11-26 | 1977-12-13 | General Electric Company | Semiconductor device and method of manufacture thereof |
| US4099997A (en) * | 1976-06-21 | 1978-07-11 | Rca Corporation | Method of fabricating a semiconductor device |
| JPS5816333B2 (ja) * | 1976-12-10 | 1983-03-30 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| JPS53118367A (en) * | 1977-03-25 | 1978-10-16 | Hitachi Ltd | Manufacture of semiconductor |
| JPS5833693B2 (ja) * | 1977-08-12 | 1983-07-21 | 株式会社日立製作所 | 半導体装置の製造方法 |
| CH632356A5 (de) * | 1977-12-15 | 1982-09-30 | Bbc Brown Boveri & Cie | Verfahren zur herstellung von metallmustern auf siliziumscheiben fuer die thermomigration. |
| JPS5494869A (en) * | 1978-01-11 | 1979-07-26 | Hitachi Ltd | Production of semiconductor device |
| JPS553618A (en) * | 1978-06-21 | 1980-01-11 | Hitachi Ltd | Manufacturing method for semiconductor device |
| JPS5536913A (en) * | 1978-09-04 | 1980-03-14 | Hitachi Ltd | Semiconductor device |
| US4188245A (en) * | 1978-09-18 | 1980-02-12 | General Electric Company | Selective open tube aluminum diffusion |
| US4199386A (en) * | 1978-11-28 | 1980-04-22 | Rca Corporation | Method of diffusing aluminum into monocrystalline silicon |
| US4239560A (en) * | 1979-05-21 | 1980-12-16 | General Electric Company | Open tube aluminum oxide disc diffusion |
| US4677456A (en) * | 1979-05-25 | 1987-06-30 | Raytheon Company | Semiconductor structure and manufacturing method |
| JPS5824007B2 (ja) * | 1979-07-16 | 1983-05-18 | 株式会社日立製作所 | 半導体装置の製造方法 |
| JPS5824006B2 (ja) * | 1980-01-30 | 1983-05-18 | 株式会社日立製作所 | 不純物拡散法 |
| NL8006668A (nl) * | 1980-12-09 | 1982-07-01 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
| JPS58122724A (ja) * | 1982-01-18 | 1983-07-21 | Toshiba Corp | 半導体素子の製造方法 |
| JP2886183B2 (ja) * | 1988-06-28 | 1999-04-26 | 三菱電機株式会社 | フィールド分離絶縁膜の製造方法 |
| US5036377A (en) * | 1988-08-03 | 1991-07-30 | Texas Instruments Incorporated | Triac array |
| GB2237929A (en) * | 1989-10-23 | 1991-05-15 | Philips Electronic Associated | A method of manufacturing a semiconductor device |
| US6727527B1 (en) | 1995-07-31 | 2004-04-27 | Ixys Corporation | Reverse blocking IGBT |
| US20040061170A1 (en) * | 1995-07-31 | 2004-04-01 | Ixys Corporation | Reverse blocking IGBT |
| US5698454A (en) * | 1995-07-31 | 1997-12-16 | Ixys Corporation | Method of making a reverse blocking IGBT |
| EP0893821A1 (en) * | 1997-07-21 | 1999-01-27 | STMicroelectronics S.r.l. | Process for the manufacturing of a DMOS-technology transistor providing for a single thermal process for the formation of source and body regions |
| GB9919764D0 (en) | 1999-08-21 | 1999-10-27 | Koninkl Philips Electronics Nv | Thyristors and their manufacture |
| DE10159498A1 (de) * | 2001-12-04 | 2003-06-12 | Bosch Gmbh Robert | Halbleiteranordnung mit einem pn-Übergang und Verfahren zur Herstellung einer Halbleiteranordnung |
| JP4222092B2 (ja) * | 2003-05-07 | 2009-02-12 | 富士電機デバイステクノロジー株式会社 | 半導体ウェハ、半導体装置および半導体装置の製造方法 |
| US7326596B2 (en) * | 2004-04-26 | 2008-02-05 | Ixys Corporation | High voltage power device with low diffusion pipe resistance |
| DE102006041424A1 (de) * | 2006-09-04 | 2008-03-20 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur simultanen Dotierung und Oxidation von Halbleitersubstraten und dessen Verwendung |
| US9590033B1 (en) | 2015-11-20 | 2017-03-07 | Ixys Corporation | Trench separation diffusion for high voltage device |
| US9704832B1 (en) | 2016-02-29 | 2017-07-11 | Ixys Corporation | Die stack assembly using an edge separation structure for connectivity through a die of the stack |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3143444A (en) * | 1960-11-09 | 1964-08-04 | Lucas Industries Ltd | Semi-conductor devices |
| GB1031451A (en) * | 1961-08-03 | 1966-06-02 | Lucas Industries Ltd | Controlled rectifiers |
| US3574009A (en) * | 1968-03-06 | 1971-04-06 | Unitrode Corp | Controlled doping of semiconductors |
| US3628107A (en) * | 1969-05-05 | 1971-12-14 | Gen Electric | Passivated semiconductor device with peripheral protective junction |
| US3628106A (en) * | 1969-05-05 | 1971-12-14 | Gen Electric | Passivated semiconductor device with protective peripheral junction portion |
| US3664894A (en) * | 1970-02-24 | 1972-05-23 | Rca Corp | Method of manufacturing semiconductor devices having high planar junction breakdown voltage |
| US3979230A (en) * | 1973-10-30 | 1976-09-07 | General Electric Company | Method of making isolation grids in bodies of semiconductor material |
| US3904442A (en) * | 1973-10-30 | 1975-09-09 | Gen Electric | Method of making isolation grids in bodies of semiconductor material |
| US3933541A (en) * | 1974-01-22 | 1976-01-20 | Mitsubishi Denki Kabushiki Kaisha | Process of producing semiconductor planar device |
| US3914138A (en) * | 1974-08-16 | 1975-10-21 | Westinghouse Electric Corp | Method of making semiconductor devices by single step diffusion |
| DE2506436C3 (de) * | 1975-02-15 | 1980-05-14 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Diffusionsverfahren zum Herstellen aluminiumdotierter Isolationszonen für Halbleiterbauelemente |
-
1975
- 1975-03-26 GB GB12649/75A patent/GB1536545A/en not_active Expired
-
1976
- 1976-03-16 CA CA248,047A patent/CA1048161A/en not_active Expired
- 1976-03-18 DE DE2611363A patent/DE2611363C2/de not_active Expired
- 1976-03-22 NL NL7602960A patent/NL7602960A/xx not_active Application Discontinuation
- 1976-03-22 US US05/668,946 patent/US4040878A/en not_active Expired - Lifetime
- 1976-03-23 JP JP51030909A patent/JPS51120184A/ja active Granted
- 1976-03-23 SE SE7603557A patent/SE404568B/xx not_active IP Right Cessation
- 1976-03-23 IT IT21490/76A patent/IT1058674B/it active
- 1976-03-23 CH CH363376A patent/CH607327A5/xx not_active IP Right Cessation
- 1976-03-24 BE BE165513A patent/BE839972A/xx unknown
- 1976-03-24 AU AU12282/76A patent/AU497599B2/en not_active Expired
- 1976-03-26 FR FR7608865A patent/FR2305852A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| IT1058674B (it) | 1982-05-10 |
| SE7603557L (sv) | 1976-09-27 |
| JPS51120184A (en) | 1976-10-21 |
| DE2611363C2 (de) | 1983-03-31 |
| AU497599B2 (en) | 1978-12-21 |
| DE2611363A1 (de) | 1976-10-07 |
| NL7602960A (nl) | 1976-09-28 |
| JPS54371B2 (US06294698-20010925-C00026.png) | 1979-01-10 |
| FR2305852A1 (fr) | 1976-10-22 |
| CH607327A5 (US06294698-20010925-C00026.png) | 1978-12-15 |
| BE839972A (fr) | 1976-09-24 |
| SE404568B (sv) | 1978-10-09 |
| US4040878A (en) | 1977-08-09 |
| GB1536545A (en) | 1978-12-20 |
| FR2305852B1 (US06294698-20010925-C00026.png) | 1982-10-01 |
| AU1228276A (en) | 1977-09-29 |
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