CA1045582A - Appareil de pulverisation sequentielle multicible - Google Patents
Appareil de pulverisation sequentielle multicibleInfo
- Publication number
- CA1045582A CA1045582A CA225,051A CA225051A CA1045582A CA 1045582 A CA1045582 A CA 1045582A CA 225051 A CA225051 A CA 225051A CA 1045582 A CA1045582 A CA 1045582A
- Authority
- CA
- Canada
- Prior art keywords
- anode
- target
- cathode
- plasma
- targets
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 34
- 150000002500 ions Chemical class 0.000 claims abstract description 8
- 239000011261 inert gas Substances 0.000 claims abstract description 4
- 230000007935 neutral effect Effects 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 7
- 239000013077 target material Substances 0.000 claims description 6
- 230000003247 decreasing effect Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 38
- 210000002381 plasma Anatomy 0.000 abstract description 33
- 238000000151 deposition Methods 0.000 abstract description 18
- 230000008021 deposition Effects 0.000 abstract description 16
- 238000011109 contamination Methods 0.000 abstract description 9
- 230000007704 transition Effects 0.000 abstract description 6
- 230000001276 controlling effect Effects 0.000 abstract 1
- 239000011229 interlayer Substances 0.000 abstract 1
- 238000012864 cross contamination Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 239000000110 cooling liquid Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- UOACKFBJUYNSLK-XRKIENNPSA-N Estradiol Cypionate Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H](C4=CC=C(O)C=C4CC3)CC[C@@]21C)C(=O)CCC1CCCC1 UOACKFBJUYNSLK-XRKIENNPSA-N 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- -1 e.g. Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US462705A US3864239A (en) | 1974-04-22 | 1974-04-22 | Multitarget sequential sputtering apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1045582A true CA1045582A (fr) | 1979-01-02 |
Family
ID=23837464
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA225,051A Expired CA1045582A (fr) | 1974-04-22 | 1975-04-21 | Appareil de pulverisation sequentielle multicible |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3864239A (fr) |
| JP (1) | JPS5830389B2 (fr) |
| CA (1) | CA1045582A (fr) |
| DE (1) | DE2517554A1 (fr) |
| FR (1) | FR2268089B1 (fr) |
| GB (1) | GB1485331A (fr) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3904503A (en) * | 1974-05-31 | 1975-09-09 | Western Electric Co | Depositing material on a substrate using a shield |
| US3932232A (en) * | 1974-11-29 | 1976-01-13 | Bell Telephone Laboratories, Incorporated | Suppression of X-ray radiation during sputter-etching |
| US4060471A (en) * | 1975-05-19 | 1977-11-29 | Rca Corporation | Composite sputtering method |
| US4051010A (en) * | 1975-12-18 | 1977-09-27 | Western Electric Company, Inc. | Sputtering apparatus |
| US4239611A (en) * | 1979-06-11 | 1980-12-16 | Vac-Tec Systems, Inc. | Magnetron sputtering devices |
| US4333814A (en) * | 1979-12-26 | 1982-06-08 | Western Electric Company, Inc. | Methods and apparatus for improving an RF excited reactive gas plasma |
| US4362611A (en) * | 1981-07-27 | 1982-12-07 | International Business Machines Corporation | Quadrupole R.F. sputtering system having an anode/cathode shield and a floating target shield |
| US4448149A (en) * | 1982-10-12 | 1984-05-15 | International Business Machines Corporation | Apparatus for removably mounting and supplying mechanical and electrical energy to a vacuum chamber substrate holder |
| DE3404880A1 (de) * | 1984-02-11 | 1985-08-14 | Glyco-Metall-Werke Daelen & Loos Gmbh, 6200 Wiesbaden | Verfahren zum herstellen von schichtwerkstoff oder schichtwerkstuecken |
| US4885074A (en) * | 1987-02-24 | 1989-12-05 | International Business Machines Corporation | Plasma reactor having segmented electrodes |
| GB8718916D0 (en) * | 1987-08-10 | 1987-09-16 | Ion Tech Ltd | Thin film alloying apparatus |
| JPH01127674A (ja) * | 1987-11-11 | 1989-05-19 | Matsushita Electric Ind Co Ltd | マグネトロンスパッタ装置 |
| GB2228948A (en) * | 1989-02-28 | 1990-09-12 | British Aerospace | Fabrication of thin films from a composite target |
| US5391275A (en) * | 1990-03-02 | 1995-02-21 | Applied Materials, Inc. | Method for preparing a shield to reduce particles in a physical vapor deposition chamber |
| US5202008A (en) * | 1990-03-02 | 1993-04-13 | Applied Materials, Inc. | Method for preparing a shield to reduce particles in a physical vapor deposition chamber |
| NL9002176A (nl) * | 1990-10-08 | 1992-05-06 | Philips Nv | Werkwijze voor het verminderen van deeltjescontaminatie tijdens sputteren en een sputterinrichting voor gebruik van een dergelijke werkwijze. |
| US5223108A (en) * | 1991-12-30 | 1993-06-29 | Materials Research Corporation | Extended lifetime collimator |
| EP0837491A3 (fr) * | 1996-10-21 | 2000-11-15 | Nihon Shinku Gijutsu Kabushiki Kaisha | Dispositif de cathode composite de pulvérisation, et appareil de pulvérisation comportant une telle cathode composite |
| JP4137277B2 (ja) * | 1999-04-15 | 2008-08-20 | 株式会社アルバック | スパッタリング装置 |
| US6328856B1 (en) | 1999-08-04 | 2001-12-11 | Seagate Technology Llc | Method and apparatus for multilayer film deposition utilizing rotating multiple magnetron cathode device |
| US6451176B1 (en) * | 2000-11-03 | 2002-09-17 | The Regents Of The University Of California | Electrostatic particle trap for ion beam sputter deposition |
| SE521095C2 (sv) * | 2001-06-08 | 2003-09-30 | Cardinal Cg Co | Förfarande för reaktiv sputtring |
| US6635154B2 (en) * | 2001-11-03 | 2003-10-21 | Intevac, Inc. | Method and apparatus for multi-target sputtering |
| US20040086639A1 (en) * | 2002-09-24 | 2004-05-06 | Grantham Daniel Harrison | Patterned thin-film deposition using collimating heated mask asembly |
| JP4494047B2 (ja) * | 2004-03-12 | 2010-06-30 | キヤノンアネルバ株式会社 | 多元スパッタ成膜装置の二重シャッタ制御方法 |
| KR20050093230A (ko) * | 2004-03-18 | 2005-09-23 | 엘지.필립스 엘시디 주식회사 | 스퍼터링 장비 |
| US7479210B2 (en) * | 2005-04-14 | 2009-01-20 | Tango Systems, Inc. | Temperature control of pallet in sputtering system |
| US7794574B2 (en) * | 2005-04-14 | 2010-09-14 | Tango Systems, Inc. | Top shield for sputtering system |
| WO2007053586A2 (fr) * | 2005-11-01 | 2007-05-10 | Cardinal Cg Company | Processus et equipement de depot par projection reactive |
| JP4142706B2 (ja) * | 2006-09-28 | 2008-09-03 | 富士フイルム株式会社 | 成膜装置、成膜方法、絶縁膜、誘電体膜、圧電膜、強誘電体膜、圧電素子および液体吐出装置 |
| JP4993294B2 (ja) * | 2007-09-05 | 2012-08-08 | 富士フイルム株式会社 | ペロブスカイト型酸化物、強誘電体膜とその製造方法、強誘電体素子、及び液体吐出装置 |
| JP5047087B2 (ja) * | 2008-07-31 | 2012-10-10 | 富士フイルム株式会社 | 成膜装置、成膜方法、圧電膜、および、液体吐出装置 |
| JP5415979B2 (ja) * | 2009-02-16 | 2014-02-12 | キヤノンアネルバ株式会社 | スパッタリング装置及び二重回転シャッタユニット並びにスパッタリング方法 |
| CN105420679B (zh) * | 2015-11-16 | 2018-04-03 | 江苏中腾石英材料科技有限公司 | 一种孪生对靶磁控溅射制备覆铜陶瓷基板的装置及方法 |
| US10431440B2 (en) * | 2015-12-20 | 2019-10-01 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
| US11361950B2 (en) | 2020-04-15 | 2022-06-14 | Applied Materials, Inc. | Multi-cathode processing chamber with dual rotatable shields |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3528906A (en) * | 1967-06-05 | 1970-09-15 | Texas Instruments Inc | Rf sputtering method and system |
| US3803019A (en) * | 1971-10-07 | 1974-04-09 | Hewlett Packard Co | Sputtering system |
| US3796649A (en) * | 1971-12-13 | 1974-03-12 | Varian Associates | Coaxial sputtering apparatus |
-
1974
- 1974-04-22 US US462705A patent/US3864239A/en not_active Expired - Lifetime
-
1975
- 1975-04-16 GB GB15575/75A patent/GB1485331A/en not_active Expired
- 1975-04-21 DE DE19752517554 patent/DE2517554A1/de not_active Ceased
- 1975-04-21 CA CA225,051A patent/CA1045582A/fr not_active Expired
- 1975-04-22 JP JP50048271A patent/JPS5830389B2/ja not_active Expired
- 1975-04-22 FR FR7512460A patent/FR2268089B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS50148286A (fr) | 1975-11-27 |
| FR2268089B1 (fr) | 1978-06-23 |
| DE2517554A1 (de) | 1975-10-30 |
| FR2268089A1 (fr) | 1975-11-14 |
| US3864239A (en) | 1975-02-04 |
| JPS5830389B2 (ja) | 1983-06-29 |
| GB1485331A (en) | 1977-09-08 |
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