CA1043470A - Arrangement for stabilizing a bipolar semiconductor device utilized in emitter follower or current switching configuration - Google Patents
Arrangement for stabilizing a bipolar semiconductor device utilized in emitter follower or current switching configurationInfo
- Publication number
- CA1043470A CA1043470A CA247,257A CA247257A CA1043470A CA 1043470 A CA1043470 A CA 1043470A CA 247257 A CA247257 A CA 247257A CA 1043470 A CA1043470 A CA 1043470A
- Authority
- CA
- Canada
- Prior art keywords
- base
- transistor
- semiconductor device
- resistor
- stabilizing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 230000000087 stabilizing effect Effects 0.000 title abstract description 19
- 238000000034 method Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 6
- 230000001965 increasing effect Effects 0.000 claims description 4
- 230000010354 integration Effects 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 230000006641 stabilisation Effects 0.000 description 4
- 238000011105 stabilization Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XGRYDJSRYGHYOO-UHFFFAOYSA-N Thesine Natural products C1=CC(O)=CC=C1C1C(C(=O)OCC2C3CCCN3CC2)C(C=2C=CC(O)=CC=2)C1C(=O)OCC1C2CCCN2CC1 XGRYDJSRYGHYOO-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/64—Variable-capacitance diodes, e.g. varactors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/206—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of combinations of capacitors and resistors
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US55859075A | 1975-03-14 | 1975-03-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1043470A true CA1043470A (en) | 1978-11-28 |
Family
ID=24230141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA247,257A Expired CA1043470A (en) | 1975-03-14 | 1976-03-02 | Arrangement for stabilizing a bipolar semiconductor device utilized in emitter follower or current switching configuration |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | UST983011I4 (enrdf_load_stackoverflow) |
| JP (1) | JPS51114088A (enrdf_load_stackoverflow) |
| CA (1) | CA1043470A (enrdf_load_stackoverflow) |
| DE (1) | DE2607177A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2304179A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1516922A (enrdf_load_stackoverflow) |
| IT (1) | IT1055397B (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3326958C2 (de) * | 1983-07-27 | 1986-07-10 | Telefunken electronic GmbH, 7100 Heilbronn | Integrierte Schaltung zum Verstärken |
| DE3326957C2 (de) * | 1983-07-27 | 1986-07-31 | Telefunken electronic GmbH, 7100 Heilbronn | Integrierte Schaltung |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1225305C2 (de) * | 1963-03-26 | 1973-07-19 | Telefunken Patent | Integrierte Halbleiterbauelementenanordnung bzw. Festkoerperschaltung |
| GB1332653A (en) * | 1971-04-19 | 1973-10-03 | Marconi Co Ltd | Intergrated circuits |
-
1976
- 1976-01-14 FR FR7601481A patent/FR2304179A1/fr active Granted
- 1976-02-03 GB GB4109/76A patent/GB1516922A/en not_active Expired
- 1976-02-03 JP JP51010096A patent/JPS51114088A/ja active Granted
- 1976-02-20 IT IT20383/76A patent/IT1055397B/it active
- 1976-02-21 DE DE19762607177 patent/DE2607177A1/de active Granted
- 1976-03-02 CA CA247,257A patent/CA1043470A/en not_active Expired
- 1976-07-30 US US05/710,351 patent/UST983011I4/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5530302B2 (enrdf_load_stackoverflow) | 1980-08-09 |
| FR2304179B1 (enrdf_load_stackoverflow) | 1978-11-10 |
| DE2607177C2 (enrdf_load_stackoverflow) | 1988-01-07 |
| GB1516922A (en) | 1978-07-05 |
| FR2304179A1 (fr) | 1976-10-08 |
| IT1055397B (it) | 1981-12-21 |
| DE2607177A1 (de) | 1976-09-30 |
| JPS51114088A (en) | 1976-10-07 |
| UST983011I4 (en) | 1979-06-05 |
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