Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
  • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
  • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
  • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D1/00—Resistors, capacitors or inductors
  • H10D1/60—Capacitors
  • H10D1/62—Capacitors having potential barriers
  • H10D1/64—Variable-capacitance diodes, e.g. varactors 
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
  • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
  • H10D84/206—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of combinations of capacitors and resistors

Landscapes

• Bipolar Transistors (AREA)
• Bipolar Integrated Circuits (AREA)
• Semiconductor Integrated Circuits (AREA)

Applications Claiming Priority (1)

Publications (2)

Family

ID=24230141

Family Applications (1)

Country Status (7)

Families Citing this family (2)

Family Cites Families (2)

• 1976
  • 1976-01-14 FR FR7601481A patent/FR2304179A1/fr active Granted
  • 1976-02-03 GB GB4109/76A patent/GB1516922A/en not_active Expired
  • 1976-02-03 JP JP51010096A patent/JPS51114088A/ja active Granted
  • 1976-02-20 IT IT20383/76A patent/IT1055397B/it active
  • 1976-02-21 DE DE19762607177 patent/DE2607177A1/de active Granted
  • 1976-03-02 CA CA247,257A patent/CA1043470A/en not_active Expired
  • 1976-07-30 US US05/710,351 patent/UST983011I4/en active Pending

Also Published As

Similar Documents