CA1040734A - Light activated semiconductor switch device - Google Patents
Light activated semiconductor switch deviceInfo
- Publication number
- CA1040734A CA1040734A CA230,400A CA230400A CA1040734A CA 1040734 A CA1040734 A CA 1040734A CA 230400 A CA230400 A CA 230400A CA 1040734 A CA1040734 A CA 1040734A
- Authority
- CA
- Canada
- Prior art keywords
- light activated
- pnpn
- switch
- anode
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 230000003321 amplification Effects 0.000 claims 1
- 238000003199 nucleic acid amplification method Methods 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 230000000694 effects Effects 0.000 description 12
- 239000003990 capacitor Substances 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000007599 discharging Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000007600 charging Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002674 ointment Substances 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
Landscapes
- Thyristors (AREA)
- Thyristor Switches And Gates (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP49082186A JPS5929006B2 (ja) | 1974-07-19 | 1974-07-19 | 感光半導体スイツチ |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1040734A true CA1040734A (en) | 1978-10-17 |
Family
ID=13767397
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA230,400A Expired CA1040734A (en) | 1974-07-19 | 1975-06-27 | Light activated semiconductor switch device |
Country Status (4)
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS605142B2 (ja) * | 1977-05-11 | 1985-02-08 | 株式会社日立製作所 | 半導体スイツチング装置 |
JPS5832539B2 (ja) * | 1978-06-20 | 1983-07-13 | 日本電信電話株式会社 | 光スイツチ回路 |
US4323793A (en) * | 1978-09-27 | 1982-04-06 | Eaton Corporation | Thyristor having widened region of temperature sensitivity with respect to breakover voltage |
US4257091A (en) * | 1978-11-21 | 1981-03-17 | Kaufman Lance R | Electrical power converter thyristor firing circuit having noise immunity |
US4295058A (en) * | 1979-06-07 | 1981-10-13 | Eaton Corporation | Radiant energy activated semiconductor switch |
JPS5636228A (en) * | 1979-08-31 | 1981-04-09 | Fujitsu Ltd | Photo coupling element |
EP0027888B1 (en) * | 1979-09-21 | 1986-04-16 | Hitachi, Ltd. | Semiconductor switch |
US4489340A (en) * | 1980-02-04 | 1984-12-18 | Nippon Telegraph & Telephone Public Corporation | PNPN Light sensitive semiconductor switch with phototransistor connected across inner base regions |
NL8402544A (nl) * | 1984-08-20 | 1986-03-17 | Philips Nv | Opto-elektrische signaalomzetter. |
EP0268430A3 (en) * | 1986-11-14 | 1989-04-26 | Oki Electric Industry Company, Limited | An optically coupled semiconductor switch and driving method adapted thereto |
JPH07112150B2 (ja) * | 1989-04-28 | 1995-11-29 | 株式会社東芝 | 光トリガースイッチング回路 |
US5138177A (en) * | 1991-03-26 | 1992-08-11 | At&T Bell Laboratories | Solid-state relay |
JP3023858B2 (ja) * | 1991-03-29 | 2000-03-21 | 矢崎総業株式会社 | 光静電誘導サイリスタの駆動回路 |
US5387802A (en) * | 1993-05-05 | 1995-02-07 | Industrial Technology Research Institute | High-speed electronic switch having low effective series resistance |
CN1191394A (zh) * | 1997-02-20 | 1998-08-26 | 杨泰和 | 藉前置光-电转换元件驱动的绝缘栅双极晶体管 |
US7902532B2 (en) * | 2009-01-16 | 2011-03-08 | General Electric Company | Systems and methods involving transducer signals |
US20110221275A1 (en) * | 2010-03-12 | 2011-09-15 | Al-Absi Munir A | High output impedance current source |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3609413A (en) * | 1969-11-03 | 1971-09-28 | Fairchild Camera Instr Co | Circuit for the protection of monolithic silicon-controlled rectifiers from false triggering |
US3714443A (en) * | 1971-01-22 | 1973-01-30 | Honeywell Inc | Remotely controlled light sensing apparatus |
JPS5528457B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1972-07-08 | 1980-07-28 |
-
1974
- 1974-07-19 JP JP49082186A patent/JPS5929006B2/ja not_active Expired
-
1975
- 1975-06-26 US US05/590,562 patent/US4039863A/en not_active Expired - Lifetime
- 1975-06-27 CA CA230,400A patent/CA1040734A/en not_active Expired
- 1975-06-30 DE DE2529124A patent/DE2529124C3/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE2529124A1 (de) | 1976-01-29 |
JPS5929006B2 (ja) | 1984-07-17 |
JPS5111176A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1976-01-29 |
DE2529124C3 (de) | 1984-07-19 |
US4039863A (en) | 1977-08-02 |
AU8260575A (en) | 1977-01-27 |
DE2529124B2 (de) | 1977-01-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MKEX | Expiry |
Effective date: 19951017 |