CA1032396A - Method of depositing thin film utilizing a lift-off mask - Google Patents

Method of depositing thin film utilizing a lift-off mask

Info

Publication number
CA1032396A
CA1032396A CA211,474A CA211474A CA1032396A CA 1032396 A CA1032396 A CA 1032396A CA 211474 A CA211474 A CA 211474A CA 1032396 A CA1032396 A CA 1032396A
Authority
CA
Canada
Prior art keywords
lift
mask
thin film
depositing thin
film utilizing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA211,474A
Other languages
English (en)
French (fr)
Other versions
CA211474S (en
Inventor
Jack R. Franco
Janos Havas
Harold A. Levine
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of CA1032396A publication Critical patent/CA1032396A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/04—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
    • H05K3/046—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer
    • H05K3/048—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer using a lift-off resist pattern or a release layer pattern
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CA211,474A 1973-11-29 1974-10-16 Method of depositing thin film utilizing a lift-off mask Expired CA1032396A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US420034A US3873361A (en) 1973-11-29 1973-11-29 Method of depositing thin film utilizing a lift-off mask

Publications (1)

Publication Number Publication Date
CA1032396A true CA1032396A (en) 1978-06-06

Family

ID=23664803

Family Applications (1)

Application Number Title Priority Date Filing Date
CA211,474A Expired CA1032396A (en) 1973-11-29 1974-10-16 Method of depositing thin film utilizing a lift-off mask

Country Status (7)

Country Link
US (1) US3873361A (cg-RX-API-DMAC7.html)
JP (1) JPS5231714B2 (cg-RX-API-DMAC7.html)
CA (1) CA1032396A (cg-RX-API-DMAC7.html)
DE (1) DE2448535C2 (cg-RX-API-DMAC7.html)
FR (1) FR2253278B1 (cg-RX-API-DMAC7.html)
GB (1) GB1450508A (cg-RX-API-DMAC7.html)
IT (1) IT1025189B (cg-RX-API-DMAC7.html)

Families Citing this family (77)

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US4207105A (en) * 1975-01-27 1980-06-10 Fuji Photo Film Co., Ltd. Plasma-etching image in exposed AgX emulsion
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US4004044A (en) * 1975-05-09 1977-01-18 International Business Machines Corporation Method for forming patterned films utilizing a transparent lift-off mask
FR2340620A1 (fr) * 1976-02-06 1977-09-02 Ibm Procede de fabrication d'un dispositif integre a grande echelle ayant une surface plane
US4035276A (en) * 1976-04-29 1977-07-12 Ibm Corporation Making coplanar layers of thin films
US4029562A (en) * 1976-04-29 1977-06-14 Ibm Corporation Forming feedthrough connections for multi-level interconnections metallurgy systems
US4076575A (en) * 1976-06-30 1978-02-28 International Business Machines Corporation Integrated fabrication method of forming connectors through insulative layers
US4040891A (en) * 1976-06-30 1977-08-09 Ibm Corporation Etching process utilizing the same positive photoresist layer for two etching steps
US4218532A (en) * 1977-10-13 1980-08-19 Bell Telephone Laboratories, Incorporated Photolithographic technique for depositing thin films
US4132586A (en) * 1977-12-20 1979-01-02 International Business Machines Corporation Selective dry etching of substrates
US4244799A (en) * 1978-09-11 1981-01-13 Bell Telephone Laboratories, Incorporated Fabrication of integrated circuits utilizing thick high-resolution patterns
US4181755A (en) * 1978-11-21 1980-01-01 Rca Corporation Thin film pattern generation by an inverse self-lifting technique
US4202914A (en) * 1978-12-29 1980-05-13 International Business Machines Corporation Method of depositing thin films of small dimensions utilizing silicon nitride lift-off mask
US4272561A (en) * 1979-05-29 1981-06-09 International Business Machines Corporation Hybrid process for SBD metallurgies
US4232059A (en) * 1979-06-06 1980-11-04 E-Systems, Inc. Process of defining film patterns on microelectronic substrates by air abrading
US4341850A (en) * 1979-07-19 1982-07-27 Hughes Aircraft Company Mask structure for forming semiconductor devices, comprising electron-sensitive resist patterns with controlled line profiles
US4283483A (en) * 1979-07-19 1981-08-11 Hughes Aircraft Company Process for forming semiconductor devices using electron-sensitive resist patterns with controlled line profiles
EP0031463B1 (en) * 1979-12-26 1984-06-13 International Business Machines Corporation Process for depositing a pattern of material on a substrate and use of this process for forming a patterned mask structure on a semiconductor substrate
US4307179A (en) * 1980-07-03 1981-12-22 International Business Machines Corporation Planar metal interconnection system and process
US4335506A (en) * 1980-08-04 1982-06-22 International Business Machines Corporation Method of forming aluminum/copper alloy conductors
US4346125A (en) * 1980-12-08 1982-08-24 Bell Telephone Laboratories, Incorporated Removing hardened organic materials during fabrication of integrated circuits using anhydrous hydrazine solvent
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US4396458A (en) * 1981-12-21 1983-08-02 International Business Machines Corporation Method for forming planar metal/insulator structures
US4428796A (en) 1982-08-02 1984-01-31 Fairchild Camera And Instrument Corporation Adhesion bond-breaking of lift-off regions on semiconductor structures
US4562091A (en) * 1982-12-23 1985-12-31 International Business Machines Corporation Use of plasma polymerized orgaosilicon films in fabrication of lift-off masks
US4493855A (en) * 1982-12-23 1985-01-15 International Business Machines Corporation Use of plasma polymerized organosilicon films in fabrication of lift-off masks
US4497684A (en) * 1983-02-22 1985-02-05 Amdahl Corporation Lift-off process for depositing metal on a substrate
US4606931A (en) * 1983-06-27 1986-08-19 International Business Machines Corporation Lift-off masking method
US4939071A (en) * 1984-03-06 1990-07-03 Harris Corporation Method for forming low resistance, sub-micrometer semiconductor gate structures
JPS60262150A (ja) * 1984-06-11 1985-12-25 Nippon Telegr & Teleph Corp <Ntt> 三層レジスト用中間層材料及びそれを用いた三層レジストパタン形成方法
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US4689113A (en) * 1986-03-21 1987-08-25 International Business Machines Corporation Process for forming planar chip-level wiring
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US3849136A (en) * 1973-07-31 1974-11-19 Ibm Masking of deposited thin films by use of a masking layer photoresist composite

Also Published As

Publication number Publication date
US3873361A (en) 1975-03-25
IT1025189B (it) 1978-08-10
FR2253278A1 (cg-RX-API-DMAC7.html) 1975-06-27
JPS5231714B2 (cg-RX-API-DMAC7.html) 1977-08-16
JPS5086984A (cg-RX-API-DMAC7.html) 1975-07-12
DE2448535A1 (de) 1975-06-05
DE2448535C2 (de) 1982-08-12
GB1450508A (en) 1976-09-22
FR2253278B1 (cg-RX-API-DMAC7.html) 1979-06-01

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