CA1030664A - Elimination of scr action in cmos device structures - Google Patents

Elimination of scr action in cmos device structures

Info

Publication number
CA1030664A
CA1030664A CA239,235A CA239235A CA1030664A CA 1030664 A CA1030664 A CA 1030664A CA 239235 A CA239235 A CA 239235A CA 1030664 A CA1030664 A CA 1030664A
Authority
CA
Canada
Prior art keywords
elimination
device structures
cmos device
scr action
scr
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA239,235A
Other languages
English (en)
French (fr)
Inventor
Gerald D. O'rourke
Harsaran S. Bhatia
Siegfried K. Wiedmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of CA1030664A publication Critical patent/CA1030664A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
CA239,235A 1974-12-30 1975-11-04 Elimination of scr action in cmos device structures Expired CA1030664A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/537,511 US3955210A (en) 1974-12-30 1974-12-30 Elimination of SCR structure

Publications (1)

Publication Number Publication Date
CA1030664A true CA1030664A (en) 1978-05-02

Family

ID=24142953

Family Applications (1)

Application Number Title Priority Date Filing Date
CA239,235A Expired CA1030664A (en) 1974-12-30 1975-11-04 Elimination of scr action in cmos device structures

Country Status (7)

Country Link
US (1) US3955210A (de)
JP (1) JPS5625027B2 (de)
CA (1) CA1030664A (de)
DE (1) DE2554296C2 (de)
FR (1) FR2296938A1 (de)
GB (1) GB1502130A (de)
IT (1) IT1058321B (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4149176A (en) * 1975-07-18 1979-04-10 Tokyo Shibaura Electric Co., Ltd. Complementary MOSFET device
GB1559583A (en) * 1975-07-18 1980-01-23 Tokyo Shibaura Electric Co Complementary mosfet device and method of manufacturing the same
US4168442A (en) * 1975-07-18 1979-09-18 Tokyo Shibaura Electric Co., Ltd. CMOS FET device with abnormal current flow prevention
US4209713A (en) * 1975-07-18 1980-06-24 Tokyo Shibaura Electric Co., Ltd. Semiconductor integrated circuit device in which difficulties caused by parasitic transistors are eliminated
US4167747A (en) * 1975-07-18 1979-09-11 Tokyo Shibaura Electric Co., Ltd. Complementary mosfet device and method of manufacturing the same
US4143391A (en) * 1975-09-12 1979-03-06 Tokyo Shibaura Electric Co., Ltd. Integrated circuit device
GB1549130A (en) * 1977-06-01 1979-08-01 Hughes Microelectronics Ltd Cm Monolithic integrated circuit
JPS5591162A (en) * 1978-12-27 1980-07-10 Fujitsu Ltd Semiconductor device
JPS5618469A (en) * 1979-07-24 1981-02-21 Fujitsu Ltd Semiconductor device
JPS56162860A (en) * 1980-05-19 1981-12-15 Toshiba Corp Semiconductor device
US4458262A (en) * 1980-05-27 1984-07-03 Supertex, Inc. CMOS Device with ion-implanted channel-stop region and fabrication method therefor
DE3276981D1 (en) * 1981-10-09 1987-09-17 Toshiba Kk Semiconductor device having a fuse element
JPS5873147A (ja) * 1981-10-27 1983-05-02 Mitsubishi Electric Corp 半導体集積回路装置
US4797724A (en) * 1982-06-30 1989-01-10 Honeywell Inc. Reducing bipolar parasitic effects in IGFET devices
JPS59501766A (ja) * 1982-09-20 1984-10-18 セミ・プロセシ−ズ・インコ−ポレ−テッド ラッチアップ保護用のガ−ドバンドを持つｃｍｏｓ集積回路
JPS6016455A (ja) * 1983-07-08 1985-01-28 Seiko Epson Corp 相補型ｍｉｓ半導体集積回路装置
JPH0828480B2 (ja) * 1983-09-30 1996-03-21 富士通株式会社 半導体集積回路装置
WO1985002062A1 (en) * 1983-10-31 1985-05-09 Storage Technology Partners Cmos integrated circuit configuration for eliminating latchup
DE3435751A1 (de) * 1984-09-28 1986-04-10 Siemens AG, 1000 Berlin und 8000 München Integrierte halbleiterschaltung in komplementaerer schaltungstechnik mit ueberspannungsschutz-struktur
US4875151A (en) * 1986-08-11 1989-10-17 Ncr Corporation Two transistor full wave rectifier
JPH0722193B2 (ja) * 1986-11-24 1995-03-08 三菱電機株式会社 集積回路
EP0283046B1 (de) * 1987-03-18 1996-06-12 Nec Corporation Vorrichtung mit complementäre integrierte Schaltung mit Mitteln zur Verhinderung einer parasitären Auslösung
FR2623016B1 (fr) * 1987-11-06 1991-06-14 Thomson Semiconducteurs Dispositif de fusion d'un fusible dans un circuit integre de type cmos
JPH05152523A (ja) * 1992-05-18 1993-06-18 Seiko Epson Corp 相補型ｍｉｓ半導体集積回路装置
US5828110A (en) * 1995-06-05 1998-10-27 Advanced Micro Devices, Inc. Latchup-proof I/O circuit implementation
JP2002124580A (ja) * 2000-10-18 2002-04-26 Yamaha Corp 入力保護回路
JP2006013450A (ja) * 2004-05-27 2006-01-12 Renesas Technology Corp 半導体装置およびその製造方法
US8231056B2 (en) * 2005-04-08 2012-07-31 Authentec, Inc. System for and method of protecting an integrated circuit from over currents

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3673428A (en) * 1970-09-18 1972-06-27 Rca Corp Input transient protection for complementary insulated gate field effect transistor integrated circuit device
US3798512A (en) * 1970-09-28 1974-03-19 Ibm Fet device with guard ring and fabrication method therefor
US3806371A (en) * 1971-07-28 1974-04-23 Motorola Inc Method of making complementary monolithic insulated gate field effect transistors having low threshold voltage and low leakage current
US3712995A (en) * 1972-03-27 1973-01-23 Rca Corp Input transient protection for complementary insulated gate field effect transistor integrated circuit device
US3916430A (en) * 1973-03-14 1975-10-28 Rca Corp System for eliminating substrate bias effect in field effect transistor circuits

Also Published As

Publication number Publication date
GB1502130A (en) 1978-02-22
FR2296938B1 (de) 1979-04-27
JPS5625027B2 (de) 1981-06-10
US3955210A (en) 1976-05-04
JPS5193171A (de) 1976-08-16
DE2554296C2 (de) 1985-11-28
FR2296938A1 (fr) 1976-07-30
DE2554296A1 (de) 1976-07-08
IT1058321B (it) 1982-04-10

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