CA1019834A - Regenerating circuit in the form of a keyed flip-flop - Google Patents
Regenerating circuit in the form of a keyed flip-flopInfo
- Publication number
- CA1019834A CA1019834A CA193,294A CA193294A CA1019834A CA 1019834 A CA1019834 A CA 1019834A CA 193294 A CA193294 A CA 193294A CA 1019834 A CA1019834 A CA 1019834A
- Authority
- CA
- Canada
- Prior art keywords
- keyed
- flop
- flip
- regenerating circuit
- regenerating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Read Only Memory (AREA)
- Amplifiers (AREA)
- Logic Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2309192A DE2309192C3 (de) | 1973-02-23 | 1973-02-23 | Regenerierschaltung nach Art eines getasteten Flipflops und Verfahren zum Betrieb einer solchen Regenerierschaltung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1019834A true CA1019834A (en) | 1977-10-25 |
Family
ID=5872937
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA193,294A Expired CA1019834A (en) | 1973-02-23 | 1974-02-22 | Regenerating circuit in the form of a keyed flip-flop |
Country Status (13)
| Country | Link |
|---|---|
| US (1) | US3892984A (xx) |
| JP (1) | JPS5916350B2 (xx) |
| AT (1) | AT339955B (xx) |
| BE (1) | BE811463A (xx) |
| CA (1) | CA1019834A (xx) |
| CH (1) | CH572262A5 (xx) |
| DE (1) | DE2309192C3 (xx) |
| FR (1) | FR2219492B1 (xx) |
| GB (1) | GB1463382A (xx) |
| IT (1) | IT1008878B (xx) |
| LU (1) | LU69443A1 (xx) |
| NL (1) | NL7402393A (xx) |
| SE (1) | SE395980B (xx) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3879621A (en) * | 1973-04-18 | 1975-04-22 | Ibm | Sense amplifier |
| US3806898A (en) * | 1973-06-29 | 1974-04-23 | Ibm | Regeneration of dynamic monolithic memories |
| US4060737A (en) * | 1974-08-22 | 1977-11-29 | Texas Instruments Incorporated | Charge coupled device shift registers having an improved regenerative charge detector |
| US3979603A (en) * | 1974-08-22 | 1976-09-07 | Texas Instruments Incorporated | Regenerative charge detector for charged coupled devices |
| DE2443529B2 (de) * | 1974-09-11 | 1977-09-01 | Siemens AG, 1000 Berlin und 8000 München | Verfahren und anordnung zum einschreiben von binaersignalen in ausgewaehlte speicherelemente eines mos-speichers |
| US4004284A (en) * | 1975-03-05 | 1977-01-18 | Teletype Corporation | Binary voltage-differential sensing circuits, and sense/refresh amplifier circuits for random-access memories |
| US3976895A (en) * | 1975-03-18 | 1976-08-24 | Bell Telephone Laboratories, Incorporated | Low power detector circuit |
| US4007381A (en) * | 1975-04-18 | 1977-02-08 | Bell Telephone Laboratories, Incorporated | Balanced regenerative charge detection circuit for semiconductor charge transfer devices |
| JPS51122343A (en) * | 1975-04-21 | 1976-10-26 | Intel Corp | High density mos memory array |
| US3983413A (en) * | 1975-05-02 | 1976-09-28 | Fairchild Camera And Instrument Corporation | Balanced differential capacitively decoupled charge sensor |
| US3982140A (en) * | 1975-05-09 | 1976-09-21 | Ncr Corporation | High speed bistable multivibrator circuit |
| US3992637A (en) * | 1975-05-21 | 1976-11-16 | Ibm Corporation | Unclocked sense ampllifier |
| US4000413A (en) * | 1975-05-27 | 1976-12-28 | Intel Corporation | Mos-ram |
| US3993917A (en) * | 1975-05-29 | 1976-11-23 | International Business Machines Corporation | Parameter independent FET sense amplifier |
| US4025908A (en) * | 1975-06-24 | 1977-05-24 | International Business Machines Corporation | Dynamic array with clamped bootstrap static input/output circuitry |
| US4021682A (en) * | 1975-06-30 | 1977-05-03 | Honeywell Information Systems, Inc. | Charge detectors for CCD registers |
| DE2634089C3 (de) * | 1975-08-11 | 1988-09-08 | Nippon Telegraph And Telephone Corp., Tokio/Tokyo | Schaltungsanordnung zum Erfassen schwacher Signale |
| IT1044685B (it) * | 1975-10-17 | 1980-04-21 | Snam Progetti | Processo di dissalazione ad espansioni multiple di tipo flessibile |
| US4096402A (en) * | 1975-12-29 | 1978-06-20 | Mostek Corporation | MOSFET buffer for TTL logic input and method of operation |
| US4061999A (en) * | 1975-12-29 | 1977-12-06 | Mostek Corporation | Dynamic random access memory system |
| JPS52108743A (en) * | 1976-03-10 | 1977-09-12 | Toshiba Corp | Dynamic memory device |
| GB1521955A (en) * | 1976-03-16 | 1978-08-23 | Tokyo Shibaura Electric Co | Semiconductor memory device |
| US4038567A (en) * | 1976-03-22 | 1977-07-26 | International Business Machines Corporation | Memory input signal buffer circuit |
| DE2630797C2 (de) * | 1976-07-08 | 1978-08-10 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Funktionsgenerator zur Erzeugung einer Spannung an einem Knoten, an den den Bitleitungen eines MOS-Speichers zugeordnete Flip-Flops aus MOS-Transistoren angeschlossen sind |
| JPS5364434A (en) * | 1976-11-19 | 1978-06-08 | Mitsubishi Electric Corp | Sense circuit of mos semiconductor memory |
| JPS5373039A (en) * | 1976-12-13 | 1978-06-29 | Nippon Telegr & Teleph Corp <Ntt> | Sense amplifier |
| DE2919166C2 (de) * | 1978-05-12 | 1986-01-02 | Nippon Electric Co., Ltd., Tokio/Tokyo | Speichervorrichtung |
| US4208730A (en) * | 1978-08-07 | 1980-06-17 | Rca Corporation | Precharge circuit for memory array |
| DE2842547A1 (de) * | 1978-09-29 | 1980-04-10 | Siemens Ag | Schaltungsanordnung zum lesen und regenerieren von in ein-transistor-speicherelementen gespeicherten informationen |
| JPS61244701A (ja) * | 1985-04-09 | 1986-10-31 | 財団法人 雑賀技術研究所 | 粉粒物の計量包装装置 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3588846A (en) * | 1968-12-05 | 1971-06-28 | Ibm | Storage cell with variable power level |
| US3514765A (en) * | 1969-05-23 | 1970-05-26 | Shell Oil Co | Sense amplifier comprising cross coupled mosfet's operating in a race mode for single device per bit mosfet memories |
| US3609710A (en) * | 1969-05-29 | 1971-09-28 | Bell Telephone Labor Inc | Associative memory cell with interrogation on normal digit circuits |
| US3678473A (en) * | 1970-06-04 | 1972-07-18 | Shell Oil Co | Read-write circuit for capacitive memory arrays |
| US3685027A (en) * | 1970-08-19 | 1972-08-15 | Cogar Corp | Dynamic mos memory array chip |
| BE789500A (fr) * | 1971-09-30 | 1973-03-29 | Siemens Ag | Memoire a semiconducteurs avec elements de memorisation a un seul transistor |
| DE2165729C3 (de) * | 1971-12-30 | 1975-02-13 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithische, als Lese/Schreiboder als Festwertspeicher betreibbare Speicheranordnung |
| US3771148A (en) * | 1972-03-31 | 1973-11-06 | Ncr | Nonvolatile capacitive memory cell |
-
1973
- 1973-02-23 DE DE2309192A patent/DE2309192C3/de not_active Expired
-
1974
- 1974-01-21 AT AT49074A patent/AT339955B/de not_active IP Right Cessation
- 1974-01-31 GB GB445774A patent/GB1463382A/en not_active Expired
- 1974-02-11 CH CH183474A patent/CH572262A5/xx not_active IP Right Cessation
- 1974-02-13 US US442084A patent/US3892984A/en not_active Expired - Lifetime
- 1974-02-19 FR FR7405549A patent/FR2219492B1/fr not_active Expired
- 1974-02-20 IT IT48489/74A patent/IT1008878B/it active
- 1974-02-20 SE SE7402245A patent/SE395980B/xx not_active IP Right Cessation
- 1974-02-21 JP JP49020009A patent/JPS5916350B2/ja not_active Expired
- 1974-02-21 LU LU69443A patent/LU69443A1/xx unknown
- 1974-02-21 NL NL7402393A patent/NL7402393A/xx not_active Application Discontinuation
- 1974-02-22 BE BE141293A patent/BE811463A/xx not_active IP Right Cessation
- 1974-02-22 CA CA193,294A patent/CA1019834A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2219492B1 (xx) | 1980-05-30 |
| CH572262A5 (xx) | 1976-01-30 |
| DE2309192C3 (de) | 1975-08-14 |
| BE811463A (fr) | 1974-06-17 |
| JPS5916350B2 (ja) | 1984-04-14 |
| US3892984A (en) | 1975-07-01 |
| ATA49074A (de) | 1977-03-15 |
| DE2309192A1 (de) | 1974-09-05 |
| SE395980B (sv) | 1977-08-29 |
| LU69443A1 (xx) | 1974-05-29 |
| AT339955B (de) | 1977-11-25 |
| US3892984B1 (xx) | 1983-07-05 |
| JPS49115623A (xx) | 1974-11-05 |
| NL7402393A (xx) | 1974-08-27 |
| FR2219492A1 (xx) | 1974-09-20 |
| DE2309192B2 (de) | 1975-01-09 |
| IT1008878B (it) | 1976-11-30 |
| GB1463382A (en) | 1977-02-02 |
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