CA1019076A - Process for fabricating mnos non-volatile memories - Google Patents

Process for fabricating mnos non-volatile memories

Info

Publication number
CA1019076A
CA1019076A CA194,373A CA194373A CA1019076A CA 1019076 A CA1019076 A CA 1019076A CA 194373 A CA194373 A CA 194373A CA 1019076 A CA1019076 A CA 1019076A
Authority
CA
Canada
Prior art keywords
fabricating
volatile memories
mnos
mnos non
memories
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA194,373A
Other languages
English (en)
Other versions
CA194373S (en
Inventor
William F. Blust
Charles T. Naber
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NCR Voyix Corp
Original Assignee
NCR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NCR Corp filed Critical NCR Corp
Application granted granted Critical
Publication of CA1019076A publication Critical patent/CA1019076A/en
Expired legal-status Critical Current

Links

Classifications

    • H10P14/6309—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10P14/6529—
    • H10W74/40—
    • H10P14/6334—
    • H10P14/662—
    • H10P14/6682—
    • H10P14/69215—
    • H10P14/69433—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/003—Anneal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/057—Gas flow control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/114—Nitrides of silicon
CA194,373A 1973-04-02 1974-03-07 Process for fabricating mnos non-volatile memories Expired CA1019076A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US347155A US3924024A (en) 1973-04-02 1973-04-02 Process for fabricating MNOS non-volatile memories

Publications (1)

Publication Number Publication Date
CA1019076A true CA1019076A (en) 1977-10-11

Family

ID=23362554

Family Applications (1)

Application Number Title Priority Date Filing Date
CA194,373A Expired CA1019076A (en) 1973-04-02 1974-03-07 Process for fabricating mnos non-volatile memories

Country Status (6)

Country Link
US (1) US3924024A (enExample)
CA (1) CA1019076A (enExample)
DE (1) DE2414982C3 (enExample)
FR (1) FR2223836B1 (enExample)
GB (1) GB1420557A (enExample)
IT (1) IT1010871B (enExample)

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JPS5183473A (en) * 1975-01-20 1976-07-22 Hitachi Ltd Fujunbutsuno doopinguhoho
NL7506594A (nl) * 1975-06-04 1976-12-07 Philips Nv Werkwijze voor het vervaardigen van een halfge- leiderinrichting en halfgeleiderinrichting ver- vaardigd met behulp van de werkwijze.
JPS5922381B2 (ja) * 1975-12-03 1984-05-26 株式会社東芝 ハンドウタイソシノ セイゾウホウホウ
US4138306A (en) * 1976-08-31 1979-02-06 Tokyo Shibaura Electric Co., Ltd. Apparatus for the treatment of semiconductors
EP0154670B1 (en) * 1978-06-14 1991-05-08 Fujitsu Limited Process for producing a semiconductor device having insulating film
EP0072603B1 (en) * 1978-06-14 1986-10-01 Fujitsu Limited Process for producing a semiconductor device having an insulating layer of silicon dioxide covered by a film of silicon oxynitride
US4190470A (en) * 1978-11-06 1980-02-26 M/A Com, Inc. Production of epitaxial layers by vapor deposition utilizing dynamically adjusted flow rates and gas phase concentrations
US4250206A (en) * 1978-12-11 1981-02-10 Texas Instruments Incorporated Method of making non-volatile semiconductor memory elements
JPS5587444A (en) 1978-12-26 1980-07-02 Fujitsu Ltd Method of forming insulating film on semiconductor surface
US4266985A (en) * 1979-05-18 1981-05-12 Fujitsu Limited Process for producing a semiconductor device including an ion implantation step in combination with direct thermal nitridation of the silicon substrate
US4277320A (en) * 1979-10-01 1981-07-07 Rockwell International Corporation Process for direct thermal nitridation of silicon semiconductor devices
US4438157A (en) 1980-12-05 1984-03-20 Ncr Corporation Process for forming MNOS dual dielectric structure
US4490900A (en) * 1982-01-29 1985-01-01 Seeq Technology, Inc. Method of fabricating an MOS memory array having electrically-programmable and electrically-erasable storage devices incorporated therein
US4402997A (en) * 1982-05-17 1983-09-06 Motorola, Inc. Process for improving nitride deposition on a semiconductor wafer by purging deposition tube with oxygen
US5260096A (en) * 1987-06-11 1993-11-09 Air Products And Chemicals, Inc. Structral articles
US6607946B1 (en) * 1996-05-22 2003-08-19 Micron Technology, Inc. Process for growing a dielectric layer on a silicon-containing surface using a mixture of N2O and O3
US6246076B1 (en) * 1998-08-28 2001-06-12 Cree, Inc. Layered dielectric on silicon carbide semiconductor structures
US6972436B2 (en) * 1998-08-28 2005-12-06 Cree, Inc. High voltage, high temperature capacitor and interconnection structures
US6610366B2 (en) 2000-10-03 2003-08-26 Cree, Inc. Method of N2O annealing an oxide layer on a silicon carbide layer
US6956238B2 (en) 2000-10-03 2005-10-18 Cree, Inc. Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channel
US6767843B2 (en) 2000-10-03 2004-07-27 Cree, Inc. Method of N2O growth of an oxide layer on a silicon carbide layer
US7067176B2 (en) 2000-10-03 2006-06-27 Cree, Inc. Method of fabricating an oxide layer on a silicon carbide layer utilizing an anneal in a hydrogen environment
US6528373B2 (en) * 2001-02-12 2003-03-04 Cree, Inc. Layered dielectric on silicon carbide semiconductor structures
US6528430B2 (en) * 2001-05-01 2003-03-04 Samsung Electronics Co., Ltd. Method of forming silicon containing thin films by atomic layer deposition utilizing Si2C16 and NH3
US7022378B2 (en) * 2002-08-30 2006-04-04 Cree, Inc. Nitrogen passivation of interface states in SiO2/SiC structures
US7221010B2 (en) * 2002-12-20 2007-05-22 Cree, Inc. Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors
US6979863B2 (en) * 2003-04-24 2005-12-27 Cree, Inc. Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same
US7074643B2 (en) * 2003-04-24 2006-07-11 Cree, Inc. Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same
US7727904B2 (en) * 2005-09-16 2010-06-01 Cree, Inc. Methods of forming SiC MOSFETs with high inversion layer mobility
US8432012B2 (en) 2006-08-01 2013-04-30 Cree, Inc. Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same
US7728402B2 (en) 2006-08-01 2010-06-01 Cree, Inc. Semiconductor devices including schottky diodes with controlled breakdown
US8710510B2 (en) 2006-08-17 2014-04-29 Cree, Inc. High power insulated gate bipolar transistors
US8835987B2 (en) 2007-02-27 2014-09-16 Cree, Inc. Insulated gate bipolar transistors including current suppressing layers
US8232558B2 (en) 2008-05-21 2012-07-31 Cree, Inc. Junction barrier Schottky diodes with current surge capability
US8288220B2 (en) 2009-03-27 2012-10-16 Cree, Inc. Methods of forming semiconductor devices including epitaxial layers and related structures
US8294507B2 (en) 2009-05-08 2012-10-23 Cree, Inc. Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits
US8193848B2 (en) 2009-06-02 2012-06-05 Cree, Inc. Power switching devices having controllable surge current capabilities
US8629509B2 (en) 2009-06-02 2014-01-14 Cree, Inc. High voltage insulated gate bipolar transistors with minority carrier diverter
US8541787B2 (en) 2009-07-15 2013-09-24 Cree, Inc. High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability
US8354690B2 (en) 2009-08-31 2013-01-15 Cree, Inc. Solid-state pinch off thyristor circuits
US9117739B2 (en) 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
US8415671B2 (en) 2010-04-16 2013-04-09 Cree, Inc. Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices
US9142662B2 (en) 2011-05-06 2015-09-22 Cree, Inc. Field effect transistor devices with low source resistance
US9029945B2 (en) 2011-05-06 2015-05-12 Cree, Inc. Field effect transistor devices with low source resistance
US9984894B2 (en) 2011-08-03 2018-05-29 Cree, Inc. Forming SiC MOSFETs with high channel mobility by treating the oxide interface with cesium ions
US8618582B2 (en) 2011-09-11 2013-12-31 Cree, Inc. Edge termination structure employing recesses for edge termination elements
JP2014531752A (ja) 2011-09-11 2014-11-27 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． 改善したレイアウトを有するトランジスタを備える高電流密度電力モジュール
US9373617B2 (en) 2011-09-11 2016-06-21 Cree, Inc. High current, low switching loss SiC power module
US8664665B2 (en) 2011-09-11 2014-03-04 Cree, Inc. Schottky diode employing recesses for elements of junction barrier array
US9640617B2 (en) 2011-09-11 2017-05-02 Cree, Inc. High performance power module
US8680587B2 (en) 2011-09-11 2014-03-25 Cree, Inc. Schottky diode

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3385729A (en) * 1964-10-26 1968-05-28 North American Rockwell Composite dual dielectric for isolation in integrated circuits and method of making
US3597667A (en) * 1966-03-01 1971-08-03 Gen Electric Silicon oxide-silicon nitride coatings for semiconductor devices
DE1696625C3 (de) * 1966-10-07 1979-03-08 Syumpei, Yamazaki Verfahren zum Erzeugen einer Nitridschutzschicht auf einem Halbleiterkörper
US3520722A (en) * 1967-05-10 1970-07-14 Rca Corp Fabrication of semiconductive devices with silicon nitride coatings
NL162250C (nl) * 1967-11-21 1980-04-15 Philips Nv Halfgeleiderinrichting met een halfgeleiderlichaam, waarvan aan een hoofdoppervlak het halfgeleideroppervlak plaatselijk met een oxydelaag is bedekt, en werkwijze voor het vervaardigen van planaire halfgeleider- inrichtingen.
US3592707A (en) * 1968-06-17 1971-07-13 Bell Telephone Labor Inc Precision masking using silicon nitride and silicon oxide
US3540926A (en) * 1968-10-09 1970-11-17 Gen Electric Nitride insulating films deposited by reactive evaporation
US3765935A (en) * 1971-08-10 1973-10-16 Bell Telephone Labor Inc Radiation resistant coatings for semiconductor devices

Also Published As

Publication number Publication date
US3924024A (en) 1975-12-02
FR2223836A1 (enExample) 1974-10-25
FR2223836B1 (enExample) 1978-11-17
IT1010871B (it) 1977-01-20
DE2414982B2 (enExample) 1978-10-19
GB1420557A (en) 1976-01-07
DE2414982C3 (de) 1979-06-21
DE2414982A1 (de) 1974-10-10

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