CA1013482A - Integrated circuit employing at least two field effect transistors - Google Patents

Integrated circuit employing at least two field effect transistors

Info

Publication number
CA1013482A
CA1013482A CA190,793A CA190793A CA1013482A CA 1013482 A CA1013482 A CA 1013482A CA 190793 A CA190793 A CA 190793A CA 1013482 A CA1013482 A CA 1013482A
Authority
CA
Canada
Prior art keywords
integrated circuit
field effect
effect transistors
circuit employing
employing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA190,793A
Other languages
English (en)
Inventor
Heinrich Schlotterer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of CA1013482A publication Critical patent/CA1013482A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
CA190,793A 1973-01-26 1974-01-23 Integrated circuit employing at least two field effect transistors Expired CA1013482A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2303916A DE2303916A1 (de) 1973-01-26 1973-01-26 Integrierte schaltung mit feldeffekttransistoren

Publications (1)

Publication Number Publication Date
CA1013482A true CA1013482A (en) 1977-07-05

Family

ID=5870074

Family Applications (1)

Application Number Title Priority Date Filing Date
CA190,793A Expired CA1013482A (en) 1973-01-26 1974-01-23 Integrated circuit employing at least two field effect transistors

Country Status (12)

Country Link
JP (1) JPS49110281A (en, 2012)
AT (1) AT339375B (en, 2012)
BE (1) BE810156A (en, 2012)
CA (1) CA1013482A (en, 2012)
CH (1) CH564850A5 (en, 2012)
DE (1) DE2303916A1 (en, 2012)
FR (1) FR2215704B1 (en, 2012)
GB (1) GB1413900A (en, 2012)
IT (1) IT1007011B (en, 2012)
LU (1) LU69236A1 (en, 2012)
NL (1) NL7400934A (en, 2012)
SE (1) SE385752B (en, 2012)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5080783A (en, 2012) * 1973-11-14 1975-07-01
JPS5810118B2 (ja) * 1974-08-28 1983-02-24 株式会社東芝 カイヘイブタ ノ アンゼンソウチ
US4016016A (en) * 1975-05-22 1977-04-05 Rca Corporation Method of simultaneously forming a polycrystalline silicon gate and a single crystal extension of said gate in silicon on sapphire MOS devices
JPS5610958A (en) * 1979-07-10 1981-02-03 Toshiba Corp Semiconductor circuit

Also Published As

Publication number Publication date
IT1007011B (it) 1976-10-30
GB1413900A (en) 1975-11-12
JPS49110281A (en, 2012) 1974-10-21
FR2215704B1 (en, 2012) 1977-08-26
SE385752B (sv) 1976-07-19
BE810156A (fr) 1974-05-16
AT339375B (de) 1977-10-10
NL7400934A (en, 2012) 1974-07-30
FR2215704A1 (en, 2012) 1974-08-23
DE2303916A1 (de) 1974-08-01
CH564850A5 (en, 2012) 1975-07-31
LU69236A1 (en, 2012) 1974-04-10
ATA1051373A (de) 1977-02-15

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