SE385752B - Integrerad krets med felteffekttransistorer - Google Patents

Integrerad krets med felteffekttransistorer

Info

Publication number
SE385752B
SE385752B SE7400358A SE7400358A SE385752B SE 385752 B SE385752 B SE 385752B SE 7400358 A SE7400358 A SE 7400358A SE 7400358 A SE7400358 A SE 7400358A SE 385752 B SE385752 B SE 385752B
Authority
SE
Sweden
Prior art keywords
integrated circuit
power transistors
field power
transistors
field
Prior art date
Application number
SE7400358A
Other languages
English (en)
Swedish (sv)
Inventor
H Schlotterer
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of SE385752B publication Critical patent/SE385752B/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
SE7400358A 1973-01-26 1974-01-11 Integrerad krets med felteffekttransistorer SE385752B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2303916A DE2303916A1 (de) 1973-01-26 1973-01-26 Integrierte schaltung mit feldeffekttransistoren

Publications (1)

Publication Number Publication Date
SE385752B true SE385752B (sv) 1976-07-19

Family

ID=5870074

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7400358A SE385752B (sv) 1973-01-26 1974-01-11 Integrerad krets med felteffekttransistorer

Country Status (12)

Country Link
JP (1) JPS49110281A (en, 2012)
AT (1) AT339375B (en, 2012)
BE (1) BE810156A (en, 2012)
CA (1) CA1013482A (en, 2012)
CH (1) CH564850A5 (en, 2012)
DE (1) DE2303916A1 (en, 2012)
FR (1) FR2215704B1 (en, 2012)
GB (1) GB1413900A (en, 2012)
IT (1) IT1007011B (en, 2012)
LU (1) LU69236A1 (en, 2012)
NL (1) NL7400934A (en, 2012)
SE (1) SE385752B (en, 2012)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5080783A (en, 2012) * 1973-11-14 1975-07-01
JPS5810118B2 (ja) * 1974-08-28 1983-02-24 株式会社東芝 カイヘイブタ ノ アンゼンソウチ
US4016016A (en) * 1975-05-22 1977-04-05 Rca Corporation Method of simultaneously forming a polycrystalline silicon gate and a single crystal extension of said gate in silicon on sapphire MOS devices
JPS5610958A (en) * 1979-07-10 1981-02-03 Toshiba Corp Semiconductor circuit

Also Published As

Publication number Publication date
IT1007011B (it) 1976-10-30
GB1413900A (en) 1975-11-12
JPS49110281A (en, 2012) 1974-10-21
FR2215704B1 (en, 2012) 1977-08-26
BE810156A (fr) 1974-05-16
CA1013482A (en) 1977-07-05
AT339375B (de) 1977-10-10
NL7400934A (en, 2012) 1974-07-30
FR2215704A1 (en, 2012) 1974-08-23
DE2303916A1 (de) 1974-08-01
CH564850A5 (en, 2012) 1975-07-31
LU69236A1 (en, 2012) 1974-04-10
ATA1051373A (de) 1977-02-15

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