CA1005175A - Method for the production of integrated circuits with complementary channel field effect transistors - Google Patents

Method for the production of integrated circuits with complementary channel field effect transistors

Info

Publication number
CA1005175A
CA1005175A CA196,349A CA196349A CA1005175A CA 1005175 A CA1005175 A CA 1005175A CA 196349 A CA196349 A CA 196349A CA 1005175 A CA1005175 A CA 1005175A
Authority
CA
Canada
Prior art keywords
production
field effect
integrated circuits
effect transistors
channel field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA196,349A
Other languages
English (en)
Other versions
CA196349S (en
Inventor
Heinrich Schlotterer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of CA1005175A publication Critical patent/CA1005175A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/06—Gettering

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
CA196,349A 1973-03-30 1974-03-29 Method for the production of integrated circuits with complementary channel field effect transistors Expired CA1005175A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2316095A DE2316095A1 (de) 1973-03-30 1973-03-30 Verfahren zur herstellung integrierter schaltungen mit komplementaer-kanal-feldeffekttransistoren

Publications (1)

Publication Number Publication Date
CA1005175A true CA1005175A (en) 1977-02-08

Family

ID=5876571

Family Applications (1)

Application Number Title Priority Date Filing Date
CA196,349A Expired CA1005175A (en) 1973-03-30 1974-03-29 Method for the production of integrated circuits with complementary channel field effect transistors

Country Status (13)

Country Link
US (1) US3919765A (xx)
JP (1) JPS49131085A (xx)
AT (1) AT339377B (xx)
BE (1) BE813051A (xx)
CA (1) CA1005175A (xx)
CH (1) CH570042A5 (xx)
DE (1) DE2316095A1 (xx)
FR (1) FR2223838B1 (xx)
GB (1) GB1443480A (xx)
IT (1) IT1011152B (xx)
LU (1) LU69729A1 (xx)
NL (1) NL7404337A (xx)
SE (1) SE386542B (xx)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2450408A1 (de) * 1974-10-23 1976-04-29 Siemens Ag Schaltungsanordnung in einer komplementaer-chl-technik
US4043025A (en) * 1975-05-08 1977-08-23 National Semiconductor Corporation Self-aligned CMOS process for bulk silicon and insulating substrate device
AT380974B (de) * 1982-04-06 1986-08-11 Shell Austria Verfahren zum gettern von halbleiterbauelementen
US6997985B1 (en) 1993-02-15 2006-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor, semiconductor device, and method for fabricating the same
JP3562588B2 (ja) * 1993-02-15 2004-09-08 株式会社半導体エネルギー研究所 半導体装置の製造方法
JP3193803B2 (ja) * 1993-03-12 2001-07-30 株式会社半導体エネルギー研究所 半導体素子の作製方法
KR100226730B1 (ko) * 1997-04-24 1999-10-15 구본준 씨모스펫 및 그 제조방법
WO1999019050A1 (en) 1997-10-15 1999-04-22 Saes Pure Gas, Inc. Gas purification system with safety device and method for purifying gases
US6068685A (en) * 1997-10-15 2000-05-30 Saes Pure Gas, Inc. Semiconductor manufacturing system with getter safety device
US6236089B1 (en) 1998-01-07 2001-05-22 Lg Semicon Co., Ltd. CMOSFET and method for fabricating the same
US8481372B2 (en) * 2008-12-11 2013-07-09 Micron Technology, Inc. JFET device structures and methods for fabricating the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3673679A (en) * 1970-12-01 1972-07-04 Texas Instruments Inc Complementary insulated gate field effect devices
US3783052A (en) * 1972-11-10 1974-01-01 Motorola Inc Process for manufacturing integrated circuits on an alumina substrate
US3837071A (en) * 1973-01-16 1974-09-24 Rca Corp Method of simultaneously making a sigfet and a mosfet

Also Published As

Publication number Publication date
FR2223838B1 (xx) 1978-11-10
ATA217274A (de) 1977-02-15
FR2223838A1 (xx) 1974-10-25
IT1011152B (it) 1977-01-20
AT339377B (de) 1977-10-10
DE2316095A1 (de) 1974-10-10
CH570042A5 (xx) 1975-11-28
BE813051A (fr) 1974-07-15
LU69729A1 (xx) 1974-07-17
JPS49131085A (xx) 1974-12-16
US3919765A (en) 1975-11-18
GB1443480A (en) 1976-07-21
SE386542B (sv) 1976-08-09
NL7404337A (xx) 1974-10-02

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