CA1001773A - Darlington amplifier with high breakdown voltage - Google Patents

Darlington amplifier with high breakdown voltage

Info

Publication number
CA1001773A
CA1001773A CA199,627A CA199627A CA1001773A CA 1001773 A CA1001773 A CA 1001773A CA 199627 A CA199627 A CA 199627A CA 1001773 A CA1001773 A CA 1001773A
Authority
CA
Canada
Prior art keywords
breakdown voltage
high breakdown
darlington amplifier
darlington
amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA199,627A
Other languages
English (en)
Other versions
CA199627S (en
Inventor
Takeshi Matsushita
Yoshiyuki Kawana
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of CA1001773A publication Critical patent/CA1001773A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/118—Electrodes comprising insulating layers having particular dielectric or electrostatic properties, e.g. having static charges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/125—Polycrystalline passivation
CA199,627A 1973-05-14 1974-05-13 Darlington amplifier with high breakdown voltage Expired CA1001773A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5343273A JPS5314420B2 (en, 2012) 1973-05-14 1973-05-14

Publications (1)

Publication Number Publication Date
CA1001773A true CA1001773A (en) 1976-12-14

Family

ID=12942669

Family Applications (1)

Application Number Title Priority Date Filing Date
CA199,627A Expired CA1001773A (en) 1973-05-14 1974-05-13 Darlington amplifier with high breakdown voltage

Country Status (8)

Country Link
US (1) US3977019A (en, 2012)
JP (1) JPS5314420B2 (en, 2012)
CA (1) CA1001773A (en, 2012)
DE (1) DE2422912A1 (en, 2012)
FR (1) FR2230079B1 (en, 2012)
GB (1) GB1450293A (en, 2012)
IT (1) IT1012351B (en, 2012)
NL (1) NL7406422A (en, 2012)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4176372A (en) * 1974-03-30 1979-11-27 Sony Corporation Semiconductor device having oxygen doped polycrystalline passivation layer
JPS5534582B2 (en, 2012) * 1974-06-24 1980-09-08
JPS5193874A (en) * 1975-02-15 1976-08-17 Handotaisochino seizohoho
JPS51126761A (en) * 1975-04-25 1976-11-05 Sony Corp Schottky barrier type semi-conductor unit
JPS51128268A (en) * 1975-04-30 1976-11-09 Sony Corp Semiconductor unit
JPS51128269A (en) * 1975-04-30 1976-11-09 Sony Corp Semiconductor unit
US4160989A (en) * 1975-12-29 1979-07-10 U.S. Philips Corporation Integrated circuit having complementary bipolar transistors
US4148055A (en) * 1975-12-29 1979-04-03 U.S. Philips Corporation Integrated circuit having complementary bipolar transistors
JPS5383250U (en, 2012) * 1976-12-09 1978-07-10
JPS596514B2 (ja) * 1977-03-08 1984-02-13 日本電信電話株式会社 Ｐｎ接合分離法による低漏話モノリシツクｐｎｐｎスイツチマトリクス
US4194934A (en) * 1977-05-23 1980-03-25 Varo Semiconductor, Inc. Method of passivating a semiconductor device utilizing dual polycrystalline layers
DE2841943C2 (de) * 1978-09-27 1983-12-15 Metzeler Schaum Gmbh, 8940 Memmingen Vorrichtung zum kontinuierlichen Herstellen von Polyurethan-Schaumstoffblöcken mit ebener Oberfläche
US4399449A (en) * 1980-11-17 1983-08-16 International Rectifier Corporation Composite metal and polysilicon field plate structure for high voltage semiconductor devices
US4344985A (en) * 1981-03-27 1982-08-17 Rca Corporation Method of passivating a semiconductor device with a multi-layer passivant system by thermally growing a layer of oxide on an oxygen doped polycrystalline silicon layer
JPS5976466A (ja) * 1982-10-25 1984-05-01 Mitsubishi Electric Corp プレ−ナ形半導体装置
JPS6168187A (ja) * 1984-09-11 1986-04-08 キヤノン株式会社 洗浄装置
JPS61222172A (ja) * 1985-03-15 1986-10-02 Sharp Corp Ｍｏｓｆｅｔのゲ−ト絶縁膜形成方法
US4936928A (en) * 1985-11-27 1990-06-26 Raytheon Company Semiconductor device
GB2183907B (en) * 1985-11-27 1989-10-04 Raytheon Co Semiconductor device
US4829689A (en) * 1986-06-25 1989-05-16 Merchandising Workshop, Inc. Article for display of information

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3725150A (en) * 1971-10-29 1973-04-03 Motorola Inc Process for making a fine geometry, self-aligned device structure

Also Published As

Publication number Publication date
FR2230079B1 (en, 2012) 1977-10-28
JPS503587A (en, 2012) 1975-01-14
DE2422912A1 (de) 1974-12-05
FR2230079A1 (en, 2012) 1974-12-13
NL7406422A (en, 2012) 1974-11-18
JPS5314420B2 (en, 2012) 1978-05-17
IT1012351B (it) 1977-03-10
US3977019A (en) 1976-08-24
GB1450293A (en) 1976-09-22

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