BRPI0516475A - dispositivo de transporte de elétrons e processo de produção de um dispositivo de transporte de elétrons - Google Patents

dispositivo de transporte de elétrons e processo de produção de um dispositivo de transporte de elétrons

Info

Publication number
BRPI0516475A
BRPI0516475A BRPI0516475-3A BRPI0516475A BRPI0516475A BR PI0516475 A BRPI0516475 A BR PI0516475A BR PI0516475 A BRPI0516475 A BR PI0516475A BR PI0516475 A BRPI0516475 A BR PI0516475A
Authority
BR
Brazil
Prior art keywords
transport device
electron transport
producing
electron
transport layer
Prior art date
Application number
BRPI0516475-3A
Other languages
English (en)
Inventor
Joul Eymery
Pascal Gentile
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Publication of BRPI0516475A publication Critical patent/BRPI0516475A/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/88—Tunnel-effect diodes
    • H01L29/882—Resonant tunneling diodes, i.e. RTD, RTBD
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H01L29/158—Structures without potential periodicity in a direction perpendicular to a major surface of the substrate, i.e. vertical direction, e.g. lateral superlattices, lateral surface superlattices [LSS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
    • H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Recrystallisation Techniques (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Hall/Mr Elements (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

DISPOSITIVO DE TRANSPORTE DE ELéTRONS E PROCESSO DE PRODUçãO DE UM DISPOSITIVO DE TRANSPORTE DE ELéTRONS. A invenção se refere a um dispositivo de transporte de elétrons, que compreende: pelo menos uma camada (6) de transporte na qual é realizada pelo menos uma rede periódica de deslocações e/ou de defeitos, meios (4) de guia dos elétrons na dita camada de transporte.
BRPI0516475-3A 2004-10-12 2005-10-12 dispositivo de transporte de elétrons e processo de produção de um dispositivo de transporte de elétrons BRPI0516475A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0410761A FR2876498B1 (fr) 2004-10-12 2004-10-12 Procede de realisation d'heterostructures resonnantes a transport planaire
PCT/FR2005/050845 WO2006040500A2 (fr) 2004-10-12 2005-10-12 Procede de realisation d'heterostructures resonnantes a transport planaire

Publications (1)

Publication Number Publication Date
BRPI0516475A true BRPI0516475A (pt) 2008-09-09

Family

ID=34953743

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0516475-3A BRPI0516475A (pt) 2004-10-12 2005-10-12 dispositivo de transporte de elétrons e processo de produção de um dispositivo de transporte de elétrons

Country Status (9)

Country Link
US (1) US8193525B2 (pt)
EP (1) EP1800350A2 (pt)
JP (1) JP2008516460A (pt)
KR (1) KR20070067144A (pt)
CN (1) CN101040389A (pt)
BR (1) BRPI0516475A (pt)
EA (1) EA011592B1 (pt)
FR (1) FR2876498B1 (pt)
WO (1) WO2006040500A2 (pt)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5471379B2 (ja) * 2009-12-04 2014-04-16 株式会社村田製作所 圧電デバイスの製造方法
JP2011124738A (ja) * 2009-12-10 2011-06-23 Murata Mfg Co Ltd 圧電デバイスの製造方法
CN112379245B (zh) * 2020-11-11 2023-08-11 上海华力集成电路制造有限公司 金属电迁移测试结构及其测试方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4503447A (en) 1982-07-16 1985-03-05 The United States Of America As Represented By The Secretary Of The Army Multi-dimensional quantum well device
US4799091A (en) * 1984-07-02 1989-01-17 Texas Instruments Incorporated Quantum device output switch
JP2575901B2 (ja) * 1989-11-13 1997-01-29 新技術事業団 グリッド入り量子構造
EP0535293A1 (en) * 1991-01-29 1993-04-07 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. A method of fabricating a compositional semiconductor device
JP3114246B2 (ja) * 1991-06-07 2000-12-04 ソニー株式会社 量子効果デバイス
US5449561A (en) * 1992-07-17 1995-09-12 University Of Houston Semimetal-semiconductor heterostructures and multilayers
US5831294A (en) * 1993-09-30 1998-11-03 Sony Corporation Quantum box structure and carrier conductivity modulating device
US5705321A (en) * 1993-09-30 1998-01-06 The University Of New Mexico Method for manufacture of quantum sized periodic structures in Si materials
US5796119A (en) 1993-10-29 1998-08-18 Texas Instruments Incorporated Silicon resonant tunneling
JP3500541B2 (ja) * 1994-02-15 2004-02-23 富士通株式会社 単電子トンネル接合装置の製造方法
US5529952A (en) * 1994-09-20 1996-06-25 Texas Instruments Incorporated Method of fabricating lateral resonant tunneling structure
US5504347A (en) 1994-10-17 1996-04-02 Texas Instruments Incorporated Lateral resonant tunneling device having gate electrode aligned with tunneling barriers
US5731598A (en) * 1995-06-23 1998-03-24 Matsushita Electric Industrial Co. Ltd. Single electron tunnel device and method for fabricating the same
US5888885A (en) * 1997-05-14 1999-03-30 Lucent Technologies Inc. Method for fabricating three-dimensional quantum dot arrays and resulting products
FR2766620B1 (fr) * 1997-07-22 2000-12-01 Commissariat Energie Atomique Realisation de microstructures ou de nanostructures sur un support
US6265329B1 (en) * 1998-03-09 2001-07-24 Motorola, Inc. Quantum deposition distribution control
US7015546B2 (en) * 2000-02-23 2006-03-21 Semiconductor Research Corporation Deterministically doped field-effect devices and methods of making same
US6329668B1 (en) * 2000-07-27 2001-12-11 Mp Technologies L.L.C. Quantum dots for optoelecronic devices
US6734453B2 (en) * 2000-08-08 2004-05-11 Translucent Photonics, Inc. Devices with optical gain in silicon
FR2815121B1 (fr) 2000-10-06 2002-12-13 Commissariat Energie Atomique Procede de revelation de defauts cristallins et/ou de champs de contraintes a l'interface d'adhesion moleculaire de deux materiaux solides
FR2815026B1 (fr) * 2000-10-06 2004-04-09 Commissariat Energie Atomique Procede d'auto-organisation de microstructures ou de nanostructures et dispositif a microstructures ou a nanostructures
FR2819099B1 (fr) 2000-12-28 2003-09-26 Commissariat Energie Atomique Procede de realisation d'une structure empilee
US7049625B2 (en) 2002-03-18 2006-05-23 Max-Planck-Gesellschaft Zur Fonderung Der Wissenschaften E.V. Field effect transistor memory cell, memory device and method for manufacturing a field effect transistor memory cell

Also Published As

Publication number Publication date
FR2876498A1 (fr) 2006-04-14
KR20070067144A (ko) 2007-06-27
EA011592B1 (ru) 2009-04-28
US8193525B2 (en) 2012-06-05
EA200700833A1 (ru) 2007-10-26
WO2006040500A2 (fr) 2006-04-20
FR2876498B1 (fr) 2008-03-14
EP1800350A2 (fr) 2007-06-27
US20080246022A1 (en) 2008-10-09
WO2006040500A3 (fr) 2006-12-07
JP2008516460A (ja) 2008-05-15
CN101040389A (zh) 2007-09-19

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 8A ANUIDADE.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: REFERENTE AO DESPACHO 8.6 PUBLICADO NA RPI 2260 DE 29/04/2014.