WO2006040500A3 - Procede de realisation d'heterostructures resonnantes a transport planaire - Google Patents

Procede de realisation d'heterostructures resonnantes a transport planaire Download PDF

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Publication number
WO2006040500A3
WO2006040500A3 PCT/FR2005/050845 FR2005050845W WO2006040500A3 WO 2006040500 A3 WO2006040500 A3 WO 2006040500A3 FR 2005050845 W FR2005050845 W FR 2005050845W WO 2006040500 A3 WO2006040500 A3 WO 2006040500A3
Authority
WO
WIPO (PCT)
Prior art keywords
heterostructures
resonance
transporting
producing planar
planar transporting
Prior art date
Application number
PCT/FR2005/050845
Other languages
English (en)
Other versions
WO2006040500A2 (fr
Inventor
Joel Eymery
Pascal Gentile
Original Assignee
Commissariat Energie Atomique
Joel Eymery
Pascal Gentile
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique, Joel Eymery, Pascal Gentile filed Critical Commissariat Energie Atomique
Priority to US11/576,605 priority Critical patent/US8193525B2/en
Priority to BRPI0516475-3A priority patent/BRPI0516475A/pt
Priority to EA200700833A priority patent/EA011592B1/ru
Priority to EP05810775A priority patent/EP1800350A2/fr
Priority to JP2007536236A priority patent/JP2008516460A/ja
Publication of WO2006040500A2 publication Critical patent/WO2006040500A2/fr
Publication of WO2006040500A3 publication Critical patent/WO2006040500A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/88—Tunnel-effect diodes
    • H01L29/882—Resonant tunneling diodes, i.e. RTD, RTBD
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H01L29/158—Structures without potential periodicity in a direction perpendicular to a major surface of the substrate, i.e. vertical direction, e.g. lateral superlattices, lateral surface superlattices [LSS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
    • H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Recrystallisation Techniques (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Hall/Mr Elements (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

L'invention concerne un dispositif de transport d'électrons, comportant : au moins une couche (6) de transport dans laquelle est réalisé au moins un réseau périodique de dislocations et/ou de défauts, des moyens (4) de guidage des électrons dans ladite couche de transport.
PCT/FR2005/050845 2004-10-12 2005-10-12 Procede de realisation d'heterostructures resonnantes a transport planaire WO2006040500A2 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US11/576,605 US8193525B2 (en) 2004-10-12 2005-10-12 Method for producing planar transporting resonance heterostructures
BRPI0516475-3A BRPI0516475A (pt) 2004-10-12 2005-10-12 dispositivo de transporte de elétrons e processo de produção de um dispositivo de transporte de elétrons
EA200700833A EA011592B1 (ru) 2004-10-12 2005-10-12 Способ получения резонансных гетероструктур с планарным переносом
EP05810775A EP1800350A2 (fr) 2004-10-12 2005-10-12 Procede de realisation d'heterostructures resonnantes a transport planaire
JP2007536236A JP2008516460A (ja) 2004-10-12 2005-10-12 平面輸送共振ヘテロ構造体の製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0410761A FR2876498B1 (fr) 2004-10-12 2004-10-12 Procede de realisation d'heterostructures resonnantes a transport planaire
FR0410761 2004-10-12

Publications (2)

Publication Number Publication Date
WO2006040500A2 WO2006040500A2 (fr) 2006-04-20
WO2006040500A3 true WO2006040500A3 (fr) 2006-12-07

Family

ID=34953743

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2005/050845 WO2006040500A2 (fr) 2004-10-12 2005-10-12 Procede de realisation d'heterostructures resonnantes a transport planaire

Country Status (9)

Country Link
US (1) US8193525B2 (fr)
EP (1) EP1800350A2 (fr)
JP (1) JP2008516460A (fr)
KR (1) KR20070067144A (fr)
CN (1) CN101040389A (fr)
BR (1) BRPI0516475A (fr)
EA (1) EA011592B1 (fr)
FR (1) FR2876498B1 (fr)
WO (1) WO2006040500A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5471379B2 (ja) * 2009-12-04 2014-04-16 株式会社村田製作所 圧電デバイスの製造方法
JP2011124738A (ja) * 2009-12-10 2011-06-23 Murata Mfg Co Ltd 圧電デバイスの製造方法
CN112379245B (zh) * 2020-11-11 2023-08-11 上海华力集成电路制造有限公司 金属电迁移测试结构及其测试方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0427905A2 (fr) * 1989-11-13 1991-05-22 Research Development Corporation Of Japan Structure quantique à grille enterrée
EP0750353A2 (fr) * 1995-06-23 1996-12-27 Matsushita Electric Industrial Co., Ltd. Dispositif à effet tunnel à électron unique et méthode de fabrication
US5888885A (en) * 1997-05-14 1999-03-30 Lucent Technologies Inc. Method for fabricating three-dimensional quantum dot arrays and resulting products
US6020605A (en) * 1993-09-30 2000-02-01 Sony Corporation Quantum box structure and carrier conductivity modulating device
US6261928B1 (en) * 1997-07-22 2001-07-17 Commissariat A L 'energie Atomique Producing microstructures or nanostructures on a support
US20030186512A1 (en) * 2000-10-06 2003-10-02 Semeria Marie-No?Euml;Lle Method for automatic organisation of microstructures or nanostructures and related device obtained
US20040031975A1 (en) * 2002-03-18 2004-02-19 Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften E.V., A German Corporation Field effect transistor memory cell, memory device and method for manufacturing a field effect transistor memory cell
US20040074866A1 (en) * 2000-10-06 2004-04-22 Franck Fournel Method for revealing crystalline defects and/or stress field defects at the molecular adhesion interface of two solid materials

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4503447A (en) 1982-07-16 1985-03-05 The United States Of America As Represented By The Secretary Of The Army Multi-dimensional quantum well device
US4799091A (en) * 1984-07-02 1989-01-17 Texas Instruments Incorporated Quantum device output switch
EP0535293A1 (fr) * 1991-01-29 1993-04-07 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Procédé de fabrication d'un dispositif semiconducteur compositionnel
JP3114246B2 (ja) * 1991-06-07 2000-12-04 ソニー株式会社 量子効果デバイス
US5449561A (en) * 1992-07-17 1995-09-12 University Of Houston Semimetal-semiconductor heterostructures and multilayers
US5705321A (en) * 1993-09-30 1998-01-06 The University Of New Mexico Method for manufacture of quantum sized periodic structures in Si materials
US5796119A (en) 1993-10-29 1998-08-18 Texas Instruments Incorporated Silicon resonant tunneling
JP3500541B2 (ja) * 1994-02-15 2004-02-23 富士通株式会社 単電子トンネル接合装置の製造方法
US5529952A (en) * 1994-09-20 1996-06-25 Texas Instruments Incorporated Method of fabricating lateral resonant tunneling structure
US5504347A (en) 1994-10-17 1996-04-02 Texas Instruments Incorporated Lateral resonant tunneling device having gate electrode aligned with tunneling barriers
US6265329B1 (en) * 1998-03-09 2001-07-24 Motorola, Inc. Quantum deposition distribution control
US7015546B2 (en) * 2000-02-23 2006-03-21 Semiconductor Research Corporation Deterministically doped field-effect devices and methods of making same
US6329668B1 (en) * 2000-07-27 2001-12-11 Mp Technologies L.L.C. Quantum dots for optoelecronic devices
US6734453B2 (en) * 2000-08-08 2004-05-11 Translucent Photonics, Inc. Devices with optical gain in silicon
FR2819099B1 (fr) 2000-12-28 2003-09-26 Commissariat Energie Atomique Procede de realisation d'une structure empilee

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0427905A2 (fr) * 1989-11-13 1991-05-22 Research Development Corporation Of Japan Structure quantique à grille enterrée
US6020605A (en) * 1993-09-30 2000-02-01 Sony Corporation Quantum box structure and carrier conductivity modulating device
EP0750353A2 (fr) * 1995-06-23 1996-12-27 Matsushita Electric Industrial Co., Ltd. Dispositif à effet tunnel à électron unique et méthode de fabrication
US5888885A (en) * 1997-05-14 1999-03-30 Lucent Technologies Inc. Method for fabricating three-dimensional quantum dot arrays and resulting products
US6261928B1 (en) * 1997-07-22 2001-07-17 Commissariat A L 'energie Atomique Producing microstructures or nanostructures on a support
US20030186512A1 (en) * 2000-10-06 2003-10-02 Semeria Marie-No?Euml;Lle Method for automatic organisation of microstructures or nanostructures and related device obtained
US20040074866A1 (en) * 2000-10-06 2004-04-22 Franck Fournel Method for revealing crystalline defects and/or stress field defects at the molecular adhesion interface of two solid materials
US20040031975A1 (en) * 2002-03-18 2004-02-19 Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften E.V., A German Corporation Field effect transistor memory cell, memory device and method for manufacturing a field effect transistor memory cell

Also Published As

Publication number Publication date
KR20070067144A (ko) 2007-06-27
BRPI0516475A (pt) 2008-09-09
EA200700833A1 (ru) 2007-10-26
CN101040389A (zh) 2007-09-19
FR2876498A1 (fr) 2006-04-14
EA011592B1 (ru) 2009-04-28
WO2006040500A2 (fr) 2006-04-20
US20080246022A1 (en) 2008-10-09
US8193525B2 (en) 2012-06-05
EP1800350A2 (fr) 2007-06-27
JP2008516460A (ja) 2008-05-15
FR2876498B1 (fr) 2008-03-14

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