BR7506737A - Processo para tratar corpos com um agente de ataque para remover oxido de aluminio e processo para fabricar dispositivos semicondutores - Google Patents

Processo para tratar corpos com um agente de ataque para remover oxido de aluminio e processo para fabricar dispositivos semicondutores

Info

Publication number
BR7506737A
BR7506737A BR7506737*A BR7506737A BR7506737A BR 7506737 A BR7506737 A BR 7506737A BR 7506737 A BR7506737 A BR 7506737A BR 7506737 A BR7506737 A BR 7506737A
Authority
BR
Brazil
Prior art keywords
aluminum oxide
semiconductor devices
manufacturing semiconductor
remove aluminum
attack agent
Prior art date
Application number
BR7506737*A
Other languages
English (en)
Portuguese (pt)
Inventor
J Rioult
R Fabien
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR7435152A external-priority patent/FR2288138A1/fr
Priority claimed from FR7435151A external-priority patent/FR2288392A1/fr
Application filed by Philips Nv filed Critical Philips Nv
Publication of BR7506737A publication Critical patent/BR7506737A/pt

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604Chemical etching
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/91After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00Etching, surface-brightening or pickling compositions
    • C09K13/04Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02244Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
BR7506737*A 1974-10-18 1975-10-15 Processo para tratar corpos com um agente de ataque para remover oxido de aluminio e processo para fabricar dispositivos semicondutores BR7506737A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR7435152A FR2288138A1 (fr) 1974-10-18 1974-10-18 Procede d'attaque de l'alumine
FR7435151A FR2288392A1 (fr) 1974-10-18 1974-10-18 Procede de realisation de dispositifs semiconducteurs

Publications (1)

Publication Number Publication Date
BR7506737A true BR7506737A (pt) 1976-08-17

Family

ID=26218562

Family Applications (1)

Application Number Title Priority Date Filing Date
BR7506737*A BR7506737A (pt) 1974-10-18 1975-10-15 Processo para tratar corpos com um agente de ataque para remover oxido de aluminio e processo para fabricar dispositivos semicondutores

Country Status (4)

Country Link
JP (1) JPS5640492B2 (enrdf_load_stackoverflow)
BR (1) BR7506737A (enrdf_load_stackoverflow)
DE (1) DE2546316C2 (enrdf_load_stackoverflow)
GB (1) GB1526425A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3048083C2 (de) * 1980-12-19 1983-09-29 Ludwig 8900 Augsburg Fahrmbacher-Lutz Verfahren zur chemischen Entfernung von Oxidschichten von Gegenständen aus Titan oder Titanlegierungen
JPS59184532A (ja) * 1983-04-05 1984-10-19 Oki Electric Ind Co Ltd 半導体装置の製造方法
AU2607599A (en) * 1998-03-10 1999-09-27 Scacco Electronics Consulting Selective etching of silicon nitride by means of a wet chemical process
CN111630639B (zh) 2018-01-30 2024-10-01 东京毅力科创株式会社 基板处理方法、基板处理装置和蚀刻液

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2828193A (en) * 1954-08-09 1958-03-25 Turco Products Inc Method for rejuvenation of aluminum treating solutions
JPS5141161B2 (enrdf_load_stackoverflow) * 1972-08-25 1976-11-08

Also Published As

Publication number Publication date
GB1526425A (en) 1978-09-27
JPS5169369A (enrdf_load_stackoverflow) 1976-06-15
DE2546316A1 (de) 1976-04-22
DE2546316C2 (de) 1982-11-11
JPS5640492B2 (enrdf_load_stackoverflow) 1981-09-21

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