BR112015027627A2 - Dispositivos fotovoltaicos e métodos para se fazê-los - Google Patents

Dispositivos fotovoltaicos e métodos para se fazê-los

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Publication number
BR112015027627A2
BR112015027627A2 BR112015027627A BR112015027627A BR112015027627A2 BR 112015027627 A2 BR112015027627 A2 BR 112015027627A2 BR 112015027627 A BR112015027627 A BR 112015027627A BR 112015027627 A BR112015027627 A BR 112015027627A BR 112015027627 A2 BR112015027627 A2 BR 112015027627A2
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Brazil
Prior art keywords
making
methods
photovoltaic devices
layer
photovoltaic device
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Application number
BR112015027627A
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English (en)
Inventor
Ann Blaydes Holly
William Andreini Kristian
Hullinger Huber William
Thomas Hinners Eugene
John Shiang Joseph
Liang Yong
Choi Jongwoo
Original Assignee
First Solar Inc
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Filing date
Publication date
Application filed by First Solar Inc filed Critical First Solar Inc
Publication of BR112015027627A2 publication Critical patent/BR112015027627A2/pt

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    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264Inorganic materials
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    • CCHEMISTRY; METALLURGY
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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    • H01L31/02966Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
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  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
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  • Metallurgy (AREA)
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  • Photovoltaic Devices (AREA)

Abstract

DISPOSITIVOS FOTOVOLTAICOS E MÉTODOS PARA SE FAZÊ-LOS. Um dispositivo fotovoltaico é apresentado. O dispositivo fotovoltaico inclui uma pilha de camada; e uma camada absorvente é disposta sobre a pilha de camada. A camada absorvente compreende selênio, em que uma concentração atômica de selênio varia através de uma espessura da camada absorvente. O dispositivo fotovoltaico é substancialmente livre de uma camada de sulfeto de cádmio.
BR112015027627A 2013-05-02 2014-05-02 Dispositivos fotovoltaicos e métodos para se fazê-los BR112015027627A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/875,739 US11876140B2 (en) 2013-05-02 2013-05-02 Photovoltaic devices and method of making
PCT/US2014/036501 WO2014179652A1 (en) 2013-05-02 2014-05-02 Photovoltaic devices and method of making

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BR112015027627A2 true BR112015027627A2 (pt) 2017-08-22

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US (2) US11876140B2 (pt)
EP (2) EP4075503A1 (pt)
CN (2) CN105765719B (pt)
BR (1) BR112015027627A2 (pt)
CL (1) CL2015003219A1 (pt)
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Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9698285B2 (en) 2013-02-01 2017-07-04 First Solar, Inc. Photovoltaic device including a P-N junction and method of manufacturing
US11876140B2 (en) 2013-05-02 2024-01-16 First Solar, Inc. Photovoltaic devices and method of making
CN104183663B (zh) 2013-05-21 2017-04-12 第一太阳能马来西亚有限公司 光伏器件及其制备方法
US10062800B2 (en) 2013-06-07 2018-08-28 First Solar, Inc. Photovoltaic devices and method of making
US10529883B2 (en) 2014-11-03 2020-01-07 First Solar, Inc. Photovoltaic devices and method of manufacturing
EP3675182A3 (en) * 2016-05-31 2020-07-29 First Solar, Inc Ag-doped photovoltaic devices and method of making
CN106653946B (zh) * 2016-12-27 2018-07-06 成都中建材光电材料有限公司 一种碲化镉薄膜太阳能电池吸收层的沉积方法
CN107910394A (zh) * 2017-11-06 2018-04-13 成都中建材光电材料有限公司 一种碲化镉薄膜太阳能电池的吸收层掺硒工艺
WO2019109297A1 (en) * 2017-12-07 2019-06-13 First Solar, Inc. Photovoltaic devices and semiconductor layers with group v dopants and methods for forming the same
CN109935652B (zh) * 2019-03-11 2021-06-08 华南理工大学 一种CdTe纳米晶太阳电池及其制备方法
CN114450807B (zh) * 2019-08-08 2023-07-07 中国建材国际工程集团有限公司 沉积薄膜高质量吸收层的方法
WO2024077583A1 (en) * 2022-10-14 2024-04-18 China Triumph International Engineering Co., Ltd. Cdte based thin film solar cell device with diffusion barrier layer and method for manufacturing thereof

Family Cites Families (109)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3496024A (en) 1961-10-09 1970-02-17 Monsanto Co Photovoltaic cell with a graded energy gap
US3565686A (en) 1967-09-25 1971-02-23 North American Rockwell Cadmium sulfide-selenide photodetectors and process for manufacture thereof
IL57908A0 (en) 1979-07-07 1979-11-30 Yeda Res & Dev Photovoltaic materials
IL58003A (en) 1979-08-08 1982-08-31 Yeda Res & Dev Preparation of semiconductor layers for semiconductor containing devices and for photoelectrodes
JPS5738436A (en) 1980-08-21 1982-03-03 Fuji Xerox Co Ltd Electrophotographic receptor
US4436558A (en) 1980-12-15 1984-03-13 The United States Of America As Represented By The United States Department Of Energy Electrochemical photovoltaic cell having ternary alloy film
US4388483A (en) 1981-09-08 1983-06-14 Monosolar, Inc. Thin film heterojunction photovoltaic cells and methods of making the same
JPS60140636A (ja) 1983-12-28 1985-07-25 Toshiba Corp 撮像管の光導電タ−ゲツトおよびその製造方法
JPS60157380A (ja) 1984-01-26 1985-08-17 Fuji Photo Film Co Ltd 固体撮像デバイスを用いた撮影装置
US4568792A (en) 1984-02-02 1986-02-04 Sri International Photovoltaic cell including doped cadmium telluride, a dislocation preventing agent and improved ohmic contacts
EP0248953A1 (en) 1986-06-10 1987-12-16 The Standard Oil Company Tandem photovoltaic devices
CA1303194C (en) 1987-07-21 1992-06-09 Katsumi Nakagawa Photovoltaic element with a semiconductor layer comprising non-single crystal material containing at least zn, se and h in an amount of 1 to40 atomic %
US5279678A (en) 1992-01-13 1994-01-18 Photon Energy, Inc. Photovoltaic cell with thin CS layer
US5501744A (en) 1992-01-13 1996-03-26 Photon Energy, Inc. Photovoltaic cell having a p-type polycrystalline layer with large crystals
US7075002B1 (en) 1995-03-27 2006-07-11 Semiconductor Energy Laboratory Company, Ltd. Thin-film photoelectric conversion device and a method of manufacturing the same
US5909632A (en) 1997-09-25 1999-06-01 Midwest Research Institute Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films
US6379767B1 (en) 1998-04-28 2002-04-30 Lg Electronics Inc. Optical recording medium with multiple recording layers and fabricating method thereof
DE19828310C2 (de) 1998-06-25 2000-08-31 Forschungszentrum Juelich Gmbh Einkristallpulver- und Monokornmembranherstellung
JP2001067723A (ja) 1999-08-25 2001-03-16 Toshiba Corp 光記録媒体、光記録再生方法及び光記録再生装置
US6537845B1 (en) 2001-08-30 2003-03-25 Mccandless Brian E. Chemical surface deposition of ultra-thin semiconductors
US20030070707A1 (en) 2001-10-12 2003-04-17 King Richard Roland Wide-bandgap, lattice-mismatched window layer for a solar energy conversion device
WO2003036657A1 (fr) 2001-10-19 2003-05-01 Asahi Glass Company, Limited Substrat a couche d'oxyde conductrice transparente, son procede de production et element de conversion photoelectrique
US7175704B2 (en) 2002-06-27 2007-02-13 Diamond Innovations, Inc. Method for reducing defect concentrations in crystals
EP1556902A4 (en) * 2002-09-30 2009-07-29 Miasole MANUFACTURING DEVICE AND METHOD FOR PRODUCING THIN FILM SOLAR CELLS IN A LARGE SCALE
US7812249B2 (en) 2003-04-14 2010-10-12 The Boeing Company Multijunction photovoltaic cell grown on high-miscut-angle substrate
JP2005019742A (ja) 2003-06-26 2005-01-20 Matsushita Electric Ind Co Ltd 太陽電池
US7115304B2 (en) 2004-02-19 2006-10-03 Nanosolar, Inc. High throughput surface treatment on coiled flexible substrates
US7518207B1 (en) 2004-03-19 2009-04-14 The United States Of America As Represented By The Secretary Of The Navy Molecular beam epitaxy growth of ternary and quaternary metal chalcogenide films
US7732229B2 (en) 2004-09-18 2010-06-08 Nanosolar, Inc. Formation of solar cells with conductive barrier layers and foil substrates
US8039739B1 (en) 2006-05-05 2011-10-18 Nanosolar, Inc. Individually encapsulated solar cells and solar cell strings
US20070295390A1 (en) 2006-05-05 2007-12-27 Nanosolar, Inc. Individually encapsulated solar cells and solar cell strings having a substantially inorganic protective layer
GB0608987D0 (en) 2006-05-08 2006-06-14 Univ Wales Bangor Manufacture of CdTe photovoltaic cells using MOCVD
US7985919B1 (en) 2006-08-18 2011-07-26 Nanosolar, Inc. Thermal management for photovoltaic devices
US8426722B2 (en) * 2006-10-24 2013-04-23 Zetta Research and Development LLC—AQT Series Semiconductor grain and oxide layer for photovoltaic cells
US20080156365A1 (en) 2006-10-25 2008-07-03 Scholz Jeremy H Edge mountable electrical connection assembly
US9147778B2 (en) 2006-11-07 2015-09-29 First Solar, Inc. Photovoltaic devices including nitrogen-containing metal contact
WO2008136872A2 (en) 2006-12-22 2008-11-13 Adriani Paul M Structures for low cost, reliable solar modules
US20080223430A1 (en) 2007-03-14 2008-09-18 Guardian Industries Corp. Buffer layer for front electrode structure in photovoltaic device or the like
US8309387B2 (en) 2007-04-13 2012-11-13 David Forehand Improving back-contact performance of group VI containing solar cells by utilizing a nanoscale interfacial layer
CN100452446C (zh) 2007-05-29 2009-01-14 中南大学 一种脉冲电沉积铜铟镓硒半导体薄膜材料的方法
WO2009012346A1 (en) 2007-07-16 2009-01-22 Ascent Solar Technologies, Inc. Methods for fabricating p-type cadmium selenide
US9371226B2 (en) 2011-02-02 2016-06-21 Battelle Energy Alliance, Llc Methods for forming particles
AU2009226128A1 (en) 2008-03-18 2009-09-24 Solexant Corp. Improved back contact in thin solar cells
US8143512B2 (en) 2008-03-26 2012-03-27 Solexant Corp. Junctions in substrate solar cells
KR20090109980A (ko) 2008-04-17 2009-10-21 한국과학기술연구원 가시광 대역 반도체 나노선 광센서 및 이의 제조 방법
US20100236607A1 (en) * 2008-06-12 2010-09-23 General Electric Company Monolithically integrated solar modules and methods of manufacture
WO2010030511A2 (en) * 2008-09-09 2010-03-18 Vanguard Solar, Inc. Solar cells and photodetectors with semiconducting nanostructures
US20110272027A1 (en) 2008-09-12 2011-11-10 Lomasney Henry L Solar photovoltaic devices and methods of making them
WO2010054231A1 (en) 2008-11-06 2010-05-14 Arizona Board of Regents, a body corporate acting for and on behalf of Arizona State University Laterally varying ii-vi alloys and uses thereof
US8084682B2 (en) * 2009-01-21 2011-12-27 Yung-Tin Chen Multiple band gapped cadmium telluride photovoltaic devices and process for making the same
US20100186816A1 (en) 2009-01-23 2010-07-29 Samsung Electronics Co., Ltd. Solar cell
TW201034207A (en) 2009-01-29 2010-09-16 First Solar Inc Photovoltaic device with improved crystal orientation
JP5003698B2 (ja) 2009-02-18 2012-08-15 Tdk株式会社 太陽電池、及び太陽電池の製造方法
US20100236628A1 (en) 2009-03-17 2010-09-23 Chris Schmidt Composition and method of forming an insulating layer in a photovoltaic device
JP2010251694A (ja) * 2009-03-26 2010-11-04 Fujifilm Corp 光電変換半導体層とその製造方法、光電変換素子、及び太陽電池
US20100243039A1 (en) 2009-03-31 2010-09-30 General Electric Company Layer for thin film photovoltaics and a solar cell made therefrom
US20100273287A1 (en) 2009-04-23 2010-10-28 Reel Solar, Inc. Methods for integrating quantum window structures into solar cells
US8367925B2 (en) 2009-06-29 2013-02-05 University Of Seoul Industry Cooperation Foundation Light-electricity conversion device
WO2011006050A1 (en) 2009-07-10 2011-01-13 First Solar, Inc. Photovoltaic devices including zinc
US20110024876A1 (en) * 2009-07-31 2011-02-03 Epir Technologies, Inc. Creation of thin group ii-vi monocrystalline layers by ion cutting techniques
US20130081670A1 (en) 2009-09-24 2013-04-04 Qinetiq Limited Photocell
JP4782880B2 (ja) 2009-10-05 2011-09-28 富士フイルム株式会社 バッファ層とその製造方法、反応液、光電変換素子及び太陽電池
US10340405B2 (en) 2009-12-10 2019-07-02 Epir Technologies, Inc. Tunnel heterojunctions in Group IV/Group II-IV multijunction solar cells
CN102656701B (zh) * 2009-12-15 2016-05-04 第一太阳能有限公司 光伏窗口层
FI20096380A0 (fi) 2009-12-22 2009-12-22 Beneq Oy Ohutkalvoaurinkokenno, valmistusmenetelmä ja käyttö
US8729543B2 (en) 2011-01-05 2014-05-20 Aeris Capital Sustainable Ip Ltd. Multi-nary group IB and VIA based semiconductor
US8889469B2 (en) 2009-12-28 2014-11-18 Aeris Capital Sustainable Ip Ltd. Multi-nary group IB and VIA based semiconductor
US9202954B2 (en) 2010-03-03 2015-12-01 Q1 Nanosystems Corporation Nanostructure and photovoltaic cell implementing same
US20110277838A1 (en) 2010-03-12 2011-11-17 The Regents Of The University Of California Photovoltaic Devices Employing Ternary Compound Nanoparticles
US20110247687A1 (en) 2010-04-08 2011-10-13 Minglong Zhang Thin film solar cell and method for making the same
WO2011126454A1 (en) 2010-04-09 2011-10-13 Platzer-Bjoerkman Charlotte Thin film photovoltaic solar cells
EP2381482A1 (en) * 2010-04-22 2011-10-26 Excico Group NV Improved method for manufacturing a photovoltaic cell comprising a TCO layer
US20110265865A1 (en) * 2010-04-28 2011-11-03 General Electric Company Photovoltaic cells with cadmium telluride intrinsic layer
US20110290308A1 (en) * 2010-05-28 2011-12-01 General Electric Company Monolithically integrated solar modules and methods of manufacture
WO2012002381A1 (ja) 2010-06-30 2012-01-05 京セラ株式会社 光電変換装置
US8969717B2 (en) 2010-08-12 2015-03-03 Aeris Capital Sustainable Ip Ltd. Thermoelectric stack coating for improved solar panel function
CN101937943A (zh) * 2010-08-30 2011-01-05 浙江尚越光电科技有限公司 镓铟原子比梯度分布的薄膜太阳能电池吸收层的制备方法
KR20130143031A (ko) 2010-09-15 2013-12-30 프리커서 에너제틱스, 인코퍼레이티드. 광기전체를 위한 어닐링 방법
WO2012040013A2 (en) * 2010-09-22 2012-03-29 First Solar, Inc. Photovoltaic device containing an n-type dopant source
AU2011313809B2 (en) 2010-10-05 2015-01-22 Commonwealth Scientific And Industrial Research Organisation Sintered device
US20120132268A1 (en) 2010-11-30 2012-05-31 General Electric Company Electrode, photovoltaic device, and method of making
KR20120063324A (ko) 2010-12-07 2012-06-15 한국전자통신연구원 양면 태양전지
US9276142B2 (en) * 2010-12-17 2016-03-01 First Solar, Inc. Methods for forming a transparent oxide layer for a photovoltaic device
US20120052617A1 (en) 2010-12-20 2012-03-01 General Electric Company Vapor deposition apparatus and process for continuous deposition of a doped thin film layer on a substrate
US10561339B2 (en) 2010-12-21 2020-02-18 Koninklijke Philips N.V. System and method for determining carbon dioxide excreted during non-invasive ventilation
US20120180844A1 (en) 2011-01-18 2012-07-19 Ward Iii Allan Photovoltaic module having a front support structure for redirecting incident light onto a photovoltaic cell
US20120192923A1 (en) 2011-02-01 2012-08-02 General Electric Company Photovoltaic device
WO2012129235A1 (en) 2011-03-21 2012-09-27 EncoreSolar, Inc. High efficiency cadmium telluride solar cell and method of fabrication
CN102244110B (zh) 2011-06-24 2012-09-05 四川大学 硒化钒薄膜作背接触层的CdTe太阳电池
JP2013016530A (ja) * 2011-06-30 2013-01-24 Sony Corp 記憶素子およびその製造方法ならびに記憶装置
CN102956722B (zh) * 2011-08-19 2015-05-27 比亚迪股份有限公司 一种薄膜太阳能电池
WO2013040179A1 (en) 2011-09-15 2013-03-21 First Solar, Inc. Photovoltaic module interlayer
WO2013089872A2 (en) * 2011-09-22 2013-06-20 Rosestreet Labs, Llc Band structure engineering for improved efficiency of cdte based photovoltaics
US20130074921A1 (en) 2011-09-28 2013-03-28 Ching Wan Tang Low-Resistance Back Contact For Photovoltaic Cells
CN102354711B (zh) * 2011-10-26 2013-09-04 香港中文大学 铜铟镓硒薄膜太阳能电池组件及其光吸收层的制备方法
US20130109124A1 (en) * 2011-10-28 2013-05-02 General Electric Company Methods of making a transparent layer and a photovoltaic device
US20130104985A1 (en) 2011-11-01 2013-05-02 General Electric Company Photovoltaic device with mangenese and tellurium interlayer
CN202712235U (zh) * 2012-04-13 2013-01-30 上海太阳能电池研究与发展中心 宽波段三结叠层薄膜太阳能电池
WO2014026099A1 (en) * 2012-08-10 2014-02-13 University Of Kansas Ultrathin group ii-vi semiconductor layers, group ii-vi semiconductor superlattice structures, photovoltaic devices incorporating the same, and related methods
US9276157B2 (en) 2012-08-31 2016-03-01 First Solar, Inc. Methods of treating a semiconductor layer
US9698285B2 (en) 2013-02-01 2017-07-04 First Solar, Inc. Photovoltaic device including a P-N junction and method of manufacturing
WO2014124109A1 (en) 2013-02-07 2014-08-14 First Solar Semiconductor material surface treatment with laser
EP2954562A2 (en) * 2013-02-07 2015-12-16 First Solar, Inc Photovoltaic device with protective layer over a window layer and method of manufacture of the same
WO2014144120A1 (en) 2013-03-15 2014-09-18 First Solar, Inc. Method of manufacturing a photovoltaic device
EP2973731A1 (en) 2013-03-15 2016-01-20 First Solar, Inc Photovoltaic device having improved back electrode and method of formation
US11876140B2 (en) 2013-05-02 2024-01-16 First Solar, Inc. Photovoltaic devices and method of making
US10062800B2 (en) 2013-06-07 2018-08-28 First Solar, Inc. Photovoltaic devices and method of making
US9871154B2 (en) 2013-06-21 2018-01-16 First Solar, Inc. Photovoltaic devices
US10529883B2 (en) 2014-11-03 2020-01-07 First Solar, Inc. Photovoltaic devices and method of manufacturing

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CN110379865B (zh) 2022-08-12
MY186796A (en) 2021-08-20
CN105765719A (zh) 2016-07-13
US11876140B2 (en) 2024-01-16
US20240154049A1 (en) 2024-05-09
CN110379865A (zh) 2019-10-25
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