BR112015008211B1 - circuito integrado, aparelho sensível, e, método de medição de um analito de interesse em um meio - Google Patents
circuito integrado, aparelho sensível, e, método de medição de um analito de interesse em um meio Download PDFInfo
- Publication number
- BR112015008211B1 BR112015008211B1 BR112015008211-4A BR112015008211A BR112015008211B1 BR 112015008211 B1 BR112015008211 B1 BR 112015008211B1 BR 112015008211 A BR112015008211 A BR 112015008211A BR 112015008211 B1 BR112015008211 B1 BR 112015008211B1
- Authority
- BR
- Brazil
- Prior art keywords
- region
- integrated circuit
- medium
- functionalized
- transistor
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4148—Integrated circuits therefor, e.g. fabricated by CMOS processing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
- H10D62/118—Nanostructure semiconductor bodies
- H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
- H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/221—Channel regions of field-effect devices of FETs
- H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4145—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4146—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Molecular Biology (AREA)
- General Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Pathology (AREA)
- Analytical Chemistry (AREA)
- Electrochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261714400P | 2012-10-16 | 2012-10-16 | |
| US61/714,400 | 2012-10-16 | ||
| PCT/IB2013/059296 WO2014060916A1 (en) | 2012-10-16 | 2013-10-11 | Integrated circuit with sensing transistor array, sensing apparatus and measuring method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| BR112015008211A2 BR112015008211A2 (pt) | 2017-07-04 |
| BR112015008211B1 true BR112015008211B1 (pt) | 2020-05-19 |
Family
ID=49911749
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BR112015008211-4A BR112015008211B1 (pt) | 2012-10-16 | 2013-10-11 | circuito integrado, aparelho sensível, e, método de medição de um analito de interesse em um meio |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10302590B2 (https=) |
| EP (1) | EP2909616A1 (https=) |
| JP (1) | JP6353454B2 (https=) |
| CN (1) | CN104737008B (https=) |
| BR (1) | BR112015008211B1 (https=) |
| RU (1) | RU2650087C2 (https=) |
| WO (1) | WO2014060916A1 (https=) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9797976B2 (en) * | 2013-12-11 | 2017-10-24 | Taiwan Semiconductor Manufacturing Company | Biosensor calibration system and related method |
| US10067070B2 (en) * | 2015-11-06 | 2018-09-04 | Applied Materials, Inc. | Particle monitoring device |
| WO2018056995A1 (en) * | 2016-09-23 | 2018-03-29 | Hewlett-Packard Development Company, L.P. | Fluid ejection device and particle detector |
| US10447202B2 (en) * | 2017-02-08 | 2019-10-15 | Texas Instruments Incorporated | Apparatus for communication across a capacitively coupled channel |
| JP6740949B2 (ja) * | 2017-03-31 | 2020-08-19 | 日立金属株式会社 | ガスセンサ |
| US11531027B2 (en) * | 2017-12-01 | 2022-12-20 | University Of Florida Research Foundation, Inc. | Low cost disposable medical sensor fabricated on glass, paper or plastics |
| FR3077926B1 (fr) * | 2018-02-15 | 2023-04-14 | St Microelectronics Crolles 2 Sas | Dispositif de detection, en particulier incorpore dans un ph-metre, et procede de realisation correspondant. |
| EP3853604B1 (en) * | 2018-09-21 | 2025-05-07 | Teralytic Holdings Inc. | Extensible, multimodal sensor fusion platform for remote, proximal soil sensing |
| CN114674897B (zh) * | 2022-03-28 | 2023-06-06 | 深圳大学 | 一种用于检测单细胞外pH值的探针型有机电化学晶体管传感器及其制备方法、检测方法 |
| EP4332562A1 (en) * | 2022-09-02 | 2024-03-06 | IQ Biozoom Sp. z o.o. | A mesfet biosensor and a biosensing kit |
| CN118191066B (zh) * | 2024-05-16 | 2024-10-22 | 中国科学院上海微系统与信息技术研究所 | 一种双栅硅纳米线晶体管传感器及制作方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040136866A1 (en) | 2002-06-27 | 2004-07-15 | Nanosys, Inc. | Planar nanowire based sensor elements, devices, systems and methods for using and making same |
| US20060263255A1 (en) * | 2002-09-04 | 2006-11-23 | Tzong-Ru Han | Nanoelectronic sensor system and hydrogen-sensitive functionalization |
| RU2257567C1 (ru) * | 2004-05-19 | 2005-07-27 | Воронежский государственный технический университет | Твердотельный интегральный датчик газов |
| US20060188934A1 (en) * | 2005-02-22 | 2006-08-24 | Ying-Lan Chang | System and method for implementing a high-sensitivity sensor with improved stability |
| TWI287041B (en) * | 2005-04-27 | 2007-09-21 | Jung-Tang Huang | An ultra-rapid DNA sequencing method with nano-transistors array based devices |
| FR2886459B1 (fr) * | 2005-05-31 | 2007-08-24 | Thales Sa | Reseau de transistors fet a nanotube ou nanofil semi-conducteur et dispositif electronique correspondant, pour la detection d'analytes |
| US8349604B2 (en) | 2006-06-15 | 2013-01-08 | University Of South Florida | Nano-based device for detection of disease biomarkers and other target molecules |
| KR100799577B1 (ko) | 2006-08-31 | 2008-01-30 | 한국전자통신연구원 | 가스 및 생화학물질 감지용 센서 제조 방법과 그 센서를포함하는 집적회로 및 그 제조 방법 |
| WO2008063901A1 (en) * | 2006-11-17 | 2008-05-29 | Trustees Of Boston University | Nanochannel-based sensor system for use in detecting chemical or biological species |
| IL189576A0 (en) * | 2008-02-18 | 2008-12-29 | Technion Res & Dev Foundation | Chemically sensitive field effect transistors for explosive detection |
| WO2009124111A2 (en) * | 2008-04-01 | 2009-10-08 | Trustees Of Boston University | Glucose sensor employing semiconductor nanoelectronic device |
| CN102132153B (zh) * | 2008-08-25 | 2014-08-20 | Nxp股份有限公司 | 减小电子设备中的电容性充电 |
| TWI383144B (zh) | 2008-09-23 | 2013-01-21 | Univ Nat Chiao Tung | 感測元件、製造方法及其生物檢測系統 |
| US20100219085A1 (en) | 2009-02-27 | 2010-09-02 | Edwards Lifesciences Corporation | Analyte Sensor Offset Normalization |
| WO2010120297A1 (en) | 2009-04-15 | 2010-10-21 | Hewlett-Packard Development Company, L.P | Nanowire sensor having a nanowire and electrically conductive film |
| KR101217576B1 (ko) | 2009-09-22 | 2013-01-03 | 한국전자통신연구원 | 바이오 센서 및 그의 구동 방법 |
| US8368123B2 (en) * | 2009-12-23 | 2013-02-05 | Nokia Corporation | Apparatus for sensing an event |
-
2013
- 2013-10-11 WO PCT/IB2013/059296 patent/WO2014060916A1/en not_active Ceased
- 2013-10-11 JP JP2015536269A patent/JP6353454B2/ja active Active
- 2013-10-11 US US14/434,559 patent/US10302590B2/en active Active
- 2013-10-11 EP EP13815572.6A patent/EP2909616A1/en not_active Withdrawn
- 2013-10-11 BR BR112015008211-4A patent/BR112015008211B1/pt active IP Right Grant
- 2013-10-11 CN CN201380053874.7A patent/CN104737008B/zh active Active
- 2013-10-11 RU RU2015118418A patent/RU2650087C2/ru active
Also Published As
| Publication number | Publication date |
|---|---|
| EP2909616A1 (en) | 2015-08-26 |
| WO2014060916A1 (en) | 2014-04-24 |
| US20150276667A1 (en) | 2015-10-01 |
| RU2015118418A (ru) | 2016-12-10 |
| RU2650087C2 (ru) | 2018-04-06 |
| CN104737008B (zh) | 2017-06-09 |
| JP6353454B2 (ja) | 2018-07-04 |
| CN104737008A (zh) | 2015-06-24 |
| BR112015008211A2 (pt) | 2017-07-04 |
| JP2016502644A (ja) | 2016-01-28 |
| US10302590B2 (en) | 2019-05-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| B06F | Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette] | ||
| B06U | Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette] | ||
| B09A | Decision: intention to grant [chapter 9.1 patent gazette] | ||
| B16A | Patent or certificate of addition of invention granted [chapter 16.1 patent gazette] |
Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 11/10/2013, OBSERVADAS AS CONDICOES LEGAIS. |