BR112013002242A2 - "processo e dispositivo para sintetizar por deposição química em fase vapor um material, em partícular o diamante e processo para formar por deposição química em fase vapor um semicondutor de tipo si-ge." - Google Patents

"processo e dispositivo para sintetizar por deposição química em fase vapor um material, em partícular o diamante e processo para formar por deposição química em fase vapor um semicondutor de tipo si-ge."

Info

Publication number
BR112013002242A2
BR112013002242A2 BR112013002242A BR112013002242A BR112013002242A2 BR 112013002242 A2 BR112013002242 A2 BR 112013002242A2 BR 112013002242 A BR112013002242 A BR 112013002242A BR 112013002242 A BR112013002242 A BR 112013002242A BR 112013002242 A2 BR112013002242 A2 BR 112013002242A2
Authority
BR
Brazil
Prior art keywords
deposition
vapor
synthesizing
chemical
diamond
Prior art date
Application number
BR112013002242A
Other languages
English (en)
Other versions
BR112013002242B1 (pt
Inventor
Horacio Tellez Oliva
Original Assignee
Diarotech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Diarotech filed Critical Diarotech
Publication of BR112013002242A2 publication Critical patent/BR112013002242A2/pt
Publication of BR112013002242B1 publication Critical patent/BR112013002242B1/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02527—Carbon, e.g. diamond-like carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/278—Diamond only doping or introduction of a secondary phase in the diamond
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

processo e dispositivo para sintetizar por deposição química em fase vapor um material, em partícular o diamante e processo para formar por deposição química em fase vapor um semicondutor de tipo si-ge. processo para sintetizar por deposição química em fase vapor (cvd) um material, de acordo com o qual se produz em uma câmara sob vácuo um plasma na vizinhança de um substrato, e de acordo com o qual se introduz na câmara uma substância portadora de carbono e h2 a fim de produzir na câmara um gás compreendendo substâncias portadoras de átomos de carbono reativo sob a forma de radicais ou molécula insaturada a partir das quais a síntese do referido material seár realizada, e pelo fato de que os espectros eletromagnéticos de absorção e difusão inelástica do material sólido a sintetizar são utilizados para coletar nestes espectros as frequências de absorção que contribuem para as reações que levam à formação do material sólido a sintetizar, e pelo fato de que se produz raios energéticos sob a forma de um feixe de fótons portador de quantidades de energia determinada por cada uma das frequências correspondendo às referidas frequências de absorção e de difusão elástica, o qual feixe de fótons é injetado no plasma onde, para estados energéticos do material sólido, uma aborção destes fótons tendo energia correspondendo a estes estados energéticos é realizada pela referida substância portadora dos átomos de carbono reativo.
BR112013002242-6A 2010-07-30 2011-08-01 Processo e dispositivo para sintetizar por deposição química em fase vapor um material, em partícular o diamante e processo para formar por deposição química em fase vapor um semicondutor de tipo si-ge BR112013002242B1 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
BEBE2010/0472 2010-07-30
BE2010/0472A BE1019439A3 (fr) 2010-07-30 2010-07-30 Procede pour synthetiser par depot chimique en phase vapeur une matiere solide, en particulier du diamant, ainsi qu'un dispositif pour l'application du procede.
PCT/EP2011/063255 WO2012013824A1 (fr) 2010-07-30 2011-08-01 Procede pour synthetiser par depot chimique en phase vapeur une matiere, en particulier du diamant, ainsi qu'un dispositif pour l'application du procede

Publications (2)

Publication Number Publication Date
BR112013002242A2 true BR112013002242A2 (pt) 2016-05-24
BR112013002242B1 BR112013002242B1 (pt) 2020-10-27

Family

ID=42983805

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112013002242-6A BR112013002242B1 (pt) 2010-07-30 2011-08-01 Processo e dispositivo para sintetizar por deposição química em fase vapor um material, em partícular o diamante e processo para formar por deposição química em fase vapor um semicondutor de tipo si-ge

Country Status (13)

Country Link
US (1) US8993375B2 (pt)
EP (2) EP2598669B1 (pt)
JP (1) JP5871214B2 (pt)
KR (1) KR101736243B1 (pt)
CN (1) CN103339285B (pt)
AU (1) AU2011284614B2 (pt)
BE (1) BE1019439A3 (pt)
BR (1) BR112013002242B1 (pt)
CA (1) CA2806935C (pt)
IL (1) IL224470A (pt)
RU (1) RU2572652C2 (pt)
WO (1) WO2012013824A1 (pt)
ZA (1) ZA201301548B (pt)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9416450B2 (en) * 2012-10-24 2016-08-16 Applied Materials, Inc. Showerhead designs of a hot wire chemical vapor deposition (HWCVD) chamber
FI126970B (en) * 2014-12-22 2017-08-31 Picosun Oy Atomic layer cultivation in which the first and second species of source materials are present simultaneously
FI126794B (en) 2014-12-22 2017-05-31 Picosun Oy Photo-assisted coating process
EP3402909B1 (fr) 2016-01-15 2022-08-10 Diarotech S.A. Méthode pour synthétiser une matière.
CN105506577B (zh) * 2016-03-02 2018-01-23 安徽纯源镀膜科技有限公司 一种类金刚石薄膜离子源中离子的引出装置
US11154903B2 (en) * 2016-05-13 2021-10-26 Jiangsu Favored Nanotechnology Co., Ltd. Apparatus and method for surface coating by means of grid control and plasma-initiated gas-phase polymerization
RU2653036C2 (ru) * 2016-08-24 2018-05-04 Федеральное государственное бюджетное учреждение науки Институт теплофизики им. С.С. Кутателадзе Сибирского отделения Российской академии наук (ИТ СО РАН) Способ осаждения алмазных плёнок из термически активированной смеси газов и реактор для его реализации
BE1027567B1 (fr) 2019-09-11 2021-04-06 Diarotech Sa Procédé et dispositif de synthèse de diamant et toutes autres formes allotropiques de carbone par synthèse en phase liquide
CN111948235B (zh) * 2020-08-07 2022-09-20 广西大学 测量半极性面ⅲ族氮化物薄膜缺陷密度的方法及其应用

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JPS6343313A (ja) * 1986-08-08 1988-02-24 Sumitomo Electric Ind Ltd 非晶質半導体薄膜の製造方法
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Also Published As

Publication number Publication date
AU2011284614A1 (en) 2013-03-21
BR112013002242B1 (pt) 2020-10-27
JP2013534275A (ja) 2013-09-02
JP5871214B2 (ja) 2016-03-01
IL224470A (en) 2017-03-30
RU2572652C2 (ru) 2016-01-20
US20130280860A1 (en) 2013-10-24
WO2012013824A1 (fr) 2012-02-02
AU2011284614B2 (en) 2015-06-04
EP2598669B1 (fr) 2022-11-23
CA2806935C (en) 2017-05-02
RU2013108958A (ru) 2014-09-10
ZA201301548B (en) 2014-05-28
EP3366806A1 (fr) 2018-08-29
CN103339285A (zh) 2013-10-02
KR20140012935A (ko) 2014-02-04
KR101736243B1 (ko) 2017-05-16
CN103339285B (zh) 2015-07-15
EP2598669A1 (fr) 2013-06-05
BE1019439A3 (fr) 2012-07-03
US8993375B2 (en) 2015-03-31
CA2806935A1 (en) 2012-02-02

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Legal Events

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B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B06T Formal requirements before examination [chapter 6.20 patent gazette]
B06A Patent application procedure suspended [chapter 6.1 patent gazette]
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B16A Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]

Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 01/08/2011, OBSERVADAS AS CONDICOES LEGAIS.