BR102015002978B8 - Circuito eletrônico com controle de temperatura, e, método para prolongar e equalizar a vida efetiva de uma pluralidade de transistores - Google Patents

Circuito eletrônico com controle de temperatura, e, método para prolongar e equalizar a vida efetiva de uma pluralidade de transistores

Info

Publication number
BR102015002978B8
BR102015002978B8 BR102015002978A BR102015002978A BR102015002978B8 BR 102015002978 B8 BR102015002978 B8 BR 102015002978B8 BR 102015002978 A BR102015002978 A BR 102015002978A BR 102015002978 A BR102015002978 A BR 102015002978A BR 102015002978 B8 BR102015002978 B8 BR 102015002978B8
Authority
BR
Brazil
Prior art keywords
transistors
temperature
transistor
effective life
electronic circuit
Prior art date
Application number
BR102015002978A
Other languages
English (en)
Other versions
BR102015002978A2 (pt
BR102015002978B1 (pt
Inventor
Liu Shengyi
Gao Lijun
V Solodovnik Eugene
J Karimi Kamiar
Original Assignee
Boeing Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Boeing Co filed Critical Boeing Co
Publication of BR102015002978A2 publication Critical patent/BR102015002978A2/pt
Publication of BR102015002978B1 publication Critical patent/BR102015002978B1/pt
Publication of BR102015002978B8 publication Critical patent/BR102015002978B8/pt

Links

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10Regulating voltage or current
    • G05F1/625Regulating voltage or current wherein it is irrelevant whether the variable actually regulated is ac or dc
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14Modifications for compensating variations of physical values, e.g. of temperature
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10Regulating voltage or current
    • G05F1/46Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12Modifications for increasing the maximum permissible switched current
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12Modifications for increasing the maximum permissible switched current
    • H03K17/127Modifications for increasing the maximum permissible switched current in composite switches
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K2017/0806Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
  • Inverter Devices (AREA)
  • Control Of Temperature (AREA)

Abstract

CIRCUITO ELETRÔNICO COM CONTROLE DE TEMPERATURA, SISTEMA DE DOIS TRANSISTORES COM CONTROLE DE TEMPERATURA, E, MÉTODO PARA PROLONGAR E EQUALIZAR A VIDA EFETIVA DE UMA PLURALIDADE DE TRANSISTORES Um sistema e método para prolongar equalizar a vida efetiva da pluralidade de transistores operando em paralelo. A temperatura de cada transistor é medida e comparada com a temperatura média do sistema de transistor. Uma diferença de temperatura é determinada entre a temperatura média dos transistores e a temperatura medida de cada um dos transistores. A resistência de porta e a resistência porta emissor de cada transistor são variadas com base nas diferenças de temperatura para controlar a temperatura medida de cada transistor, controlando a corrente através de cada transistor, deste modo equilibrando termicamente os transistores.
BR102015002978A 2014-02-24 2015-02-10 Circuito eletrônico com controle de temperatura, e, método para prolongar e equalizar a vida efetiva de uma pluralidade de transistores BR102015002978B8 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/187,886 US9046912B1 (en) 2014-02-24 2014-02-24 Thermally balanced parallel operation of transistors
US14/187,886 2014-02-24

Publications (3)

Publication Number Publication Date
BR102015002978A2 BR102015002978A2 (pt) 2016-02-10
BR102015002978B1 BR102015002978B1 (pt) 2022-04-12
BR102015002978B8 true BR102015002978B8 (pt) 2022-07-19

Family

ID=52282544

Family Applications (1)

Application Number Title Priority Date Filing Date
BR102015002978A BR102015002978B8 (pt) 2014-02-24 2015-02-10 Circuito eletrônico com controle de temperatura, e, método para prolongar e equalizar a vida efetiva de uma pluralidade de transistores

Country Status (7)

Country Link
US (1) US9046912B1 (pt)
EP (1) EP2911191B1 (pt)
JP (1) JP6560865B2 (pt)
KR (1) KR102053657B1 (pt)
CN (1) CN104865988B (pt)
BR (1) BR102015002978B8 (pt)
CA (1) CA2876122C (pt)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9804613B2 (en) * 2013-07-22 2017-10-31 The Boeing Company Parallel transistor circuit controller
EP3104506B1 (en) * 2015-06-09 2018-10-10 Mitsubishi Electric R&D Centre Europe B.V. Method and system for controlling the switching of a multi-die power module
US10020759B2 (en) 2015-08-04 2018-07-10 The Boeing Company Parallel modular converter architecture for efficient ground electric vehicles
JP6702154B2 (ja) * 2016-11-21 2020-05-27 株式会社デンソー スイッチの駆動装置
US10090792B2 (en) * 2016-12-08 2018-10-02 Ford Global Technologies, Llc Self-balancing parallel power devices with a temperature compensated gate driver
EP3336499B1 (en) * 2016-12-16 2019-12-11 Mitsubishi Electric R & D Centre Europe B.V. Method for controlling the temperature of a multi-die power module
EP3396392B1 (en) 2017-04-26 2020-11-04 ElectDis AB Apparatus and method for determining a power value of a target
JP6927840B2 (ja) * 2017-10-16 2021-09-01 株式会社日立製作所 電力変換装置
JP6993297B2 (ja) * 2018-06-28 2022-01-13 株式会社日立製作所 電力変換装置
EP4207602A4 (en) * 2020-08-28 2023-10-18 Nissan Motor Co., Ltd. SWITCHING ELEMENT CONTROL METHOD AND SWITCHING ELEMENT CONTROL DEVICE
CN113054961A (zh) * 2021-03-19 2021-06-29 上海瞻芯电子科技有限公司 驱动电路、设备、电源及驱动方法
DE102021208424A1 (de) 2021-08-04 2023-02-09 Robert Bosch Gesellschaft mit beschränkter Haftung Leistungsanordnung mit Temperaturregelung mittels Gateshaping
DE102022200632A1 (de) 2022-01-20 2023-07-20 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren und Vorrichtung zur Anpassung von Temperaturen von Halbleiterbauelementen
CN114967815A (zh) * 2022-06-23 2022-08-30 广东美的白色家电技术创新中心有限公司 电压调节装置、方法、装置、设备及介质
CN114879802A (zh) * 2022-06-23 2022-08-09 广东美的白色家电技术创新中心有限公司 电流调节装置、方法、装置、设备及介质

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JPH07123348B2 (ja) * 1986-07-24 1995-12-25 東芝エンジニアリング株式会社 複数の素子の負荷分担状態監視装置
WO1990013178A1 (en) 1989-04-19 1990-11-01 Sundstrand Corporation Gate drive circuit for power transistor
US5434527A (en) 1993-10-25 1995-07-18 Caterpillar Inc. Gate drive circuit
JPH09269633A (ja) * 1996-02-01 1997-10-14 Ricoh Co Ltd 画像形成装置
JP3523139B2 (ja) * 2000-02-07 2004-04-26 日本電気株式会社 可変利得回路
US6806772B2 (en) 2002-11-06 2004-10-19 Itt Manufacturing Enterprises, Inc. Power transistor array temperature control system
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US7265601B2 (en) 2004-08-23 2007-09-04 International Rectifier Corporation Adaptive gate drive voltage circuit
US7521985B2 (en) * 2005-07-01 2009-04-21 Semiconductor Components Industries, L.L.C. Method for regulating temperature and circuit therefor
JP2007124007A (ja) * 2005-10-25 2007-05-17 Sumitomo Electric Ind Ltd 電力変換器及び電圧制御方法
CN101562345B (zh) * 2008-12-30 2011-06-08 天津南大强芯半导体芯片设计有限公司 一种电压均衡开关驱动电路
US8125200B2 (en) 2009-04-29 2012-02-28 Dell Products L.P. Systems and methods for intelligently optimizing operating efficiency using variable gate drive voltage
EP2445110B1 (en) * 2010-10-22 2014-05-14 ABB Research Ltd Gate driver unit for electrical switching device
JP6480184B2 (ja) 2011-06-14 2019-03-06 インフィネオン テクノロジーズ オーストリア アクチエンゲゼルシャフト パワートランジスタのゲートドライバ
US9438228B2 (en) 2012-03-12 2016-09-06 Board Of Trustees Of Michigan State University High efficiency gate drive circuit for power transistors

Also Published As

Publication number Publication date
EP2911191A2 (en) 2015-08-26
KR102053657B1 (ko) 2019-12-09
CN104865988B (zh) 2018-03-16
US9046912B1 (en) 2015-06-02
CA2876122A1 (en) 2015-08-24
EP2911191B1 (en) 2019-07-10
CN104865988A (zh) 2015-08-26
BR102015002978A2 (pt) 2016-02-10
JP6560865B2 (ja) 2019-08-14
JP2015159712A (ja) 2015-09-03
EP2911191A3 (en) 2016-02-24
BR102015002978B1 (pt) 2022-04-12
CA2876122C (en) 2017-01-03
KR20150100535A (ko) 2015-09-02

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Legal Events

Date Code Title Description
B03A Publication of a patent application or of a certificate of addition of invention [chapter 3.1 patent gazette]
B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B06U Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette]
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B16A Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]

Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 10/02/2015, OBSERVADAS AS CONDICOES LEGAIS.

B16C Correction of notification of the grant [chapter 16.3 patent gazette]

Free format text: REF. RPI 2675 DE 12/04/2022 QUANTO AO INVENTOR.