BE904744A - PROCESS FOR PRODUCING DIELECTRIC CERAMICS - Google Patents
PROCESS FOR PRODUCING DIELECTRIC CERAMICSInfo
- Publication number
- BE904744A BE904744A BE0/216639A BE216639A BE904744A BE 904744 A BE904744 A BE 904744A BE 0/216639 A BE0/216639 A BE 0/216639A BE 216639 A BE216639 A BE 216639A BE 904744 A BE904744 A BE 904744A
- Authority
- BE
- Belgium
- Prior art keywords
- bismuth
- dielectric ceramics
- neodymium
- oxide
- producing dielectric
- Prior art date
Links
- 239000000919 ceramic Substances 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 229910052797 bismuth Inorganic materials 0.000 abstract 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract 2
- 229910052779 Neodymium Inorganic materials 0.000 abstract 1
- 229910052788 barium Inorganic materials 0.000 abstract 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 abstract 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 abstract 1
- 229910002113 barium titanate Inorganic materials 0.000 abstract 1
- 229910000416 bismuth oxide Inorganic materials 0.000 abstract 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 abstract 1
- VOPSYYWDGDGSQS-UHFFFAOYSA-N neodymium(3+);oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Ti+4].[Nd+3].[Nd+3] VOPSYYWDGDGSQS-UHFFFAOYSA-N 0.000 abstract 1
- 238000005245 sintering Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
- C04B35/468—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates
- C04B35/4686—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates based on phases other than BaTiO3 perovskite phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
Procédé de production de titanate de néodyme et de baryum dopé au bismuth. Les oxydes d'un titanate de néodyme et de baryum, avec de l'oxyde de bismuth, sont mélangés, calcinés, façonnés en un corps et frittés à une température ne s'élévant qu'à 1200 degrés C pour former un corps céramique diélectrique mur et dense. Le bismuth, considéré en tant qu'oxyde, constitue 0,25 à moins de 1,5 mole % de la totalité des oxydes de départ, ce qui entraine un abaissement important de la température de frittage.Process for the production of neodymium titanate and bismuth doped barium. The oxides of a neodymium and barium titanate, with bismuth oxide, are mixed, calcined, shaped into a body and sintered at a temperature of only 1200 degrees C to form a dielectric ceramic body wall and dense. Bismuth, considered as an oxide, constitutes 0.25 to less than 1.5 mol% of the total starting oxides, which results in a significant lowering of the sintering temperature.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US73211685A | 1985-05-09 | 1985-05-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE904744A true BE904744A (en) | 1986-09-01 |
Family
ID=24942262
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE0/216639A BE904744A (en) | 1985-05-09 | 1986-05-09 | PROCESS FOR PRODUCING DIELECTRIC CERAMICS |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS61261263A (en) |
| BE (1) | BE904744A (en) |
| CA (1) | CA1296880C (en) |
| FR (1) | FR2581638B1 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0710745B2 (en) * | 1985-09-30 | 1995-02-08 | 日本特殊陶業株式会社 | High frequency dielectric ceramic composition and method for producing the same |
| JPS63222064A (en) * | 1987-03-11 | 1988-09-14 | 宇部興産株式会社 | Manufacture of dielectric ceramic composition |
| US5264403A (en) * | 1991-09-27 | 1993-11-23 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass |
| US5479140A (en) * | 1991-09-27 | 1995-12-26 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass, method of preparing the same, and resonator and filter using the dielectric ceramic composition |
| JP2613722B2 (en) * | 1991-09-27 | 1997-05-28 | 日本碍子株式会社 | Method for producing dielectric ceramic composition for low-temperature firing |
| CN116371398B (en) * | 2023-04-11 | 2023-11-10 | 中南大学 | BIT-Nd block piezoelectric photocatalyst and preparation method and application thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4388741A (en) * | 1979-08-31 | 1983-06-21 | Kamal Banani Haghighi | Automatic sewer cleaning system |
| JPS6018086B2 (en) * | 1981-04-13 | 1985-05-08 | 株式会社村田製作所 | Porcelain dielectric for temperature compensation |
| FR2505321A1 (en) * | 1981-05-08 | 1982-11-12 | Europ Composants Electron | Ceramic dielectric - with high temp. stability and a high dielectric constant |
| FR2522870A1 (en) * | 1982-03-02 | 1983-09-09 | Europ Composants Electron | DIELECTRIC CERAMIC COMPOSITION BASED ON BARIUM TITANATE STABLE ACCORDING TO TEMPERATURE AND CAPACITOR USING THE SAME |
-
1986
- 1986-03-27 CA CA000505315A patent/CA1296880C/en not_active Expired - Lifetime
- 1986-05-07 FR FR8606634A patent/FR2581638B1/en not_active Expired - Fee Related
- 1986-05-09 JP JP61105065A patent/JPS61261263A/en active Pending
- 1986-05-09 BE BE0/216639A patent/BE904744A/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| CA1296880C (en) | 1992-03-10 |
| FR2581638B1 (en) | 1990-05-04 |
| FR2581638A1 (en) | 1986-11-14 |
| JPS61261263A (en) | 1986-11-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RE | Patent lapsed |
Owner name: MRA LABORATORIES INC. Effective date: 19930531 |