BE819665A - Procede et dispositif de depot rapide d'oxydes en couches minces et adherentes sur des supports plastiques - Google Patents

Procede et dispositif de depot rapide d'oxydes en couches minces et adherentes sur des supports plastiques

Info

Publication number
BE819665A
BE819665A BE1006169A BE1006169A BE819665A BE 819665 A BE819665 A BE 819665A BE 1006169 A BE1006169 A BE 1006169A BE 1006169 A BE1006169 A BE 1006169A BE 819665 A BE819665 A BE 819665A
Authority
BE
Belgium
Prior art keywords
oxides
thin
plastic substrates
rapid deposition
adherent layers
Prior art date
Application number
BE1006169A
Other languages
English (en)
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE819665A publication Critical patent/BE819665A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32055—Arc discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
BE1006169A 1973-09-28 1974-09-09 Procede et dispositif de depot rapide d'oxydes en couches minces et adherentes sur des supports plastiques BE819665A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7334821A FR2245779B1 (ja) 1973-09-28 1973-09-28

Publications (1)

Publication Number Publication Date
BE819665A true BE819665A (fr) 1975-03-10

Family

ID=9125687

Family Applications (1)

Application Number Title Priority Date Filing Date
BE1006169A BE819665A (fr) 1973-09-28 1974-09-09 Procede et dispositif de depot rapide d'oxydes en couches minces et adherentes sur des supports plastiques

Country Status (9)

Country Link
US (1) US4006340A (ja)
JP (1) JPS5735269B2 (ja)
BE (1) BE819665A (ja)
CH (1) CH579639A5 (ja)
DE (1) DE2444898C2 (ja)
FR (1) FR2245779B1 (ja)
GB (1) GB1478687A (ja)
IT (1) IT1020867B (ja)
NL (1) NL7412748A (ja)

Families Citing this family (75)

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US4328257A (en) * 1979-11-26 1982-05-04 Electro-Plasma, Inc. System and method for plasma coating
GB2085482B (en) * 1980-10-06 1985-03-06 Optical Coating Laboratory Inc Forming thin film oxide layers using reactive evaporation techniques
DE3331707A1 (de) * 1983-09-02 1985-03-21 Leybold-Heraeus GmbH, 5000 Köln Verfahren und vorrichtung zum reaktiven aufstaeuben von verbindungen von metallen und halbleitern
US5780313A (en) 1985-02-14 1998-07-14 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device
US6784033B1 (en) 1984-02-15 2004-08-31 Semiconductor Energy Laboratory Co., Ltd. Method for the manufacture of an insulated gate field effect semiconductor device
US4783361A (en) * 1984-09-10 1988-11-08 Ovonic Synthetic Materials Company, Inc. Coated lenses
US6786997B1 (en) 1984-11-26 2004-09-07 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus
JPH0752718B2 (ja) * 1984-11-26 1995-06-05 株式会社半導体エネルギー研究所 薄膜形成方法
US4606929A (en) * 1984-12-20 1986-08-19 Petrakov Vladimir P Method of ionized-plasma spraying and apparatus for performing same
CA1272662A (en) * 1985-03-26 1990-08-14 Canon Kabushiki Kaisha Apparatus and process for controlling flow of fine particles
DE3513892A1 (de) * 1985-04-17 1986-10-23 Plasmainvent AG, Zug Cr(pfeil abwaerts)2(pfeil abwaerts)o(pfeil abwaerts)3(pfeil abwaerts)-schutzschicht und verfahren zu deren herstellung
CA1272661A (en) * 1985-05-11 1990-08-14 Yuji Chiba Reaction apparatus
US6230650B1 (en) 1985-10-14 2001-05-15 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field
US6673722B1 (en) 1985-10-14 2004-01-06 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field
US4875810A (en) * 1985-10-21 1989-10-24 Canon Kabushiki Kaisha Apparatus for controlling fine particle flow
NL8701530A (nl) * 1987-06-30 1989-01-16 Stichting Fund Ond Material Werkwijze voor het behandelen van oppervlakken van substraten met behulp van een plasma en reactor voor het uitvoeren van die werkwijze.
DE4126216B4 (de) * 1991-08-08 2004-03-11 Unaxis Deutschland Holding Gmbh Vorrichtung für Dünnschichtverfahren zur Behandlung großflächiger Substrate
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
US5421889A (en) * 1993-06-29 1995-06-06 Tokyo Electron Limited Method and apparatus for inverting samples in a process
US5653811A (en) * 1995-07-19 1997-08-05 Chan; Chung System for the plasma treatment of large area substrates
FR2748851B1 (fr) * 1996-05-15 1998-08-07 Commissariat Energie Atomique Procede de realisation d'une couche mince de materiau semiconducteur
US6039834A (en) 1997-03-05 2000-03-21 Applied Materials, Inc. Apparatus and methods for upgraded substrate processing system with microwave plasma source
US6033974A (en) * 1997-05-12 2000-03-07 Silicon Genesis Corporation Method for controlled cleaving process
US20070122997A1 (en) * 1998-02-19 2007-05-31 Silicon Genesis Corporation Controlled process and resulting device
US6013563A (en) 1997-05-12 2000-01-11 Silicon Genesis Corporation Controlled cleaning process
US6291313B1 (en) 1997-05-12 2001-09-18 Silicon Genesis Corporation Method and device for controlled cleaving process
US6027988A (en) * 1997-05-28 2000-02-22 The Regents Of The University Of California Method of separating films from bulk substrates by plasma immersion ion implantation
US6548382B1 (en) 1997-07-18 2003-04-15 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
US6103599A (en) * 1997-07-25 2000-08-15 Silicon Genesis Corporation Planarizing technique for multilayered substrates
FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
US6228176B1 (en) 1998-02-11 2001-05-08 Silicon Genesis Corporation Contoured platen design for plasma immerson ion implantation
US6051073A (en) * 1998-02-11 2000-04-18 Silicon Genesis Corporation Perforated shield for plasma immersion ion implantation
US6274459B1 (en) 1998-02-17 2001-08-14 Silicon Genesis Corporation Method for non mass selected ion implant profile control
US6291326B1 (en) 1998-06-23 2001-09-18 Silicon Genesis Corporation Pre-semiconductor process implant and post-process film separation
US6458723B1 (en) 1999-06-24 2002-10-01 Silicon Genesis Corporation High temperature implant apparatus
US6263941B1 (en) 1999-08-10 2001-07-24 Silicon Genesis Corporation Nozzle for cleaving substrates
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US6221740B1 (en) 1999-08-10 2001-04-24 Silicon Genesis Corporation Substrate cleaving tool and method
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FR2823599B1 (fr) 2001-04-13 2004-12-17 Commissariat Energie Atomique Substrat demomtable a tenue mecanique controlee et procede de realisation
US8187377B2 (en) * 2002-10-04 2012-05-29 Silicon Genesis Corporation Non-contact etch annealing of strained layers
FR2848336B1 (fr) * 2002-12-09 2005-10-28 Commissariat Energie Atomique Procede de realisation d'une structure contrainte destinee a etre dissociee
FR2856844B1 (fr) * 2003-06-24 2006-02-17 Commissariat Energie Atomique Circuit integre sur puce de hautes performances
FR2857953B1 (fr) 2003-07-21 2006-01-13 Commissariat Energie Atomique Structure empilee, et procede pour la fabriquer
FR2861497B1 (fr) * 2003-10-28 2006-02-10 Soitec Silicon On Insulator Procede de transfert catastrophique d'une couche fine apres co-implantation
US7354815B2 (en) * 2003-11-18 2008-04-08 Silicon Genesis Corporation Method for fabricating semiconductor devices using strained silicon bearing material
FR2889887B1 (fr) * 2005-08-16 2007-11-09 Commissariat Energie Atomique Procede de report d'une couche mince sur un support
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US8293619B2 (en) 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US7811900B2 (en) * 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
FR2910179B1 (fr) * 2006-12-19 2009-03-13 Commissariat Energie Atomique PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
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FR2922359B1 (fr) * 2007-10-12 2009-12-18 Commissariat Energie Atomique Procede de fabrication d'une structure micro-electronique impliquant un collage moleculaire
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FR2925221B1 (fr) * 2007-12-17 2010-02-19 Commissariat Energie Atomique Procede de transfert d'une couche mince
US8330126B2 (en) * 2008-08-25 2012-12-11 Silicon Genesis Corporation Race track configuration and method for wafering silicon solar substrates
US8329557B2 (en) * 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling
FR2947098A1 (fr) * 2009-06-18 2010-12-24 Commissariat Energie Atomique Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince
US8652992B2 (en) 2009-12-15 2014-02-18 SDCmaterials, Inc. Pinning and affixing nano-active material
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FR1358425A (fr) * 1963-01-22 1964-04-17 Traitements Electrolytiques & Perfectionnement au chalumeau à plasma haute fréquence
GB1275261A (en) * 1968-06-04 1972-05-24 Atomic Energy Authority Uk Improvements in or relating to non thermionic cathode slow discharge devices
BE766345A (fr) * 1971-04-27 1971-09-16 Universitaire De L Etat A Mons Dispositif pour fabriquer des couches minces de substances minerales.

Also Published As

Publication number Publication date
US4006340A (en) 1977-02-01
DE2444898A1 (de) 1975-04-10
FR2245779B1 (ja) 1978-02-10
DE2444898C2 (de) 1982-04-15
IT1020867B (it) 1977-12-30
JPS5061470A (ja) 1975-05-27
FR2245779A1 (ja) 1975-04-25
CH579639A5 (ja) 1976-09-15
JPS5735269B2 (ja) 1982-07-28
GB1478687A (en) 1977-07-06
NL7412748A (nl) 1975-04-02

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