FR2245779B1 - - Google Patents
Info
- Publication number
- FR2245779B1 FR2245779B1 FR7334821A FR7334821A FR2245779B1 FR 2245779 B1 FR2245779 B1 FR 2245779B1 FR 7334821 A FR7334821 A FR 7334821A FR 7334821 A FR7334821 A FR 7334821A FR 2245779 B1 FR2245779 B1 FR 2245779B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/228—Gas flow assisted PVD deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32055—Arc discharge
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7334821A FR2245779B1 (fr) | 1973-09-28 | 1973-09-28 | |
CH1203474A CH579639A5 (fr) | 1973-09-28 | 1974-09-04 | |
BE1006169A BE819665A (fr) | 1973-09-28 | 1974-09-09 | Procede et dispositif de depot rapide d'oxydes en couches minces et adherentes sur des supports plastiques |
DE2444898A DE2444898C2 (de) | 1973-09-28 | 1974-09-19 | Verfahren und Vorrichtung zum raschen Aufdampfen von Oxyden in dünnen und festhaftenden Schichten auf Kunststoffsubstrate |
US05/507,845 US4006340A (en) | 1973-09-28 | 1974-09-20 | Device for the rapid depositing of oxides in thin layers which adhere well to plastic supports |
IT69882/74A IT1020867B (it) | 1973-09-28 | 1974-09-25 | Procedimento e dispositivo per il deposito rapido di ossidi in stra ti sottili ed aderenti su supporti plastici |
NL7412748A NL7412748A (nl) | 1973-09-28 | 1974-09-26 | Werkwijze en inrichting voor het neerslaan van n in dunne, hechtende lagen op een kunst- rager. |
GB41921/74A GB1478687A (en) | 1973-09-28 | 1974-09-26 | Method and a device for the rapid deposition of oxydes in thin layers |
JP11065274A JPS5735269B2 (fr) | 1973-09-28 | 1974-09-27 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7334821A FR2245779B1 (fr) | 1973-09-28 | 1973-09-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2245779A1 FR2245779A1 (fr) | 1975-04-25 |
FR2245779B1 true FR2245779B1 (fr) | 1978-02-10 |
Family
ID=9125687
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7334821A Expired FR2245779B1 (fr) | 1973-09-28 | 1973-09-28 |
Country Status (9)
Country | Link |
---|---|
US (1) | US4006340A (fr) |
JP (1) | JPS5735269B2 (fr) |
BE (1) | BE819665A (fr) |
CH (1) | CH579639A5 (fr) |
DE (1) | DE2444898C2 (fr) |
FR (1) | FR2245779B1 (fr) |
GB (1) | GB1478687A (fr) |
IT (1) | IT1020867B (fr) |
NL (1) | NL7412748A (fr) |
Families Citing this family (75)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
LU71343A1 (fr) * | 1974-11-22 | 1976-03-17 | ||
JPS52113380A (en) * | 1976-03-19 | 1977-09-22 | Koito Mfg Co Ltd | Process for preparing film shorn with a hottwire cutter |
US4078097A (en) * | 1976-07-09 | 1978-03-07 | International Prototypes, Inc. | Metallic coating process |
US4158589A (en) * | 1977-12-30 | 1979-06-19 | International Business Machines Corporation | Negative ion extractor for a plasma etching apparatus |
US4328257A (en) * | 1979-11-26 | 1982-05-04 | Electro-Plasma, Inc. | System and method for plasma coating |
GB2085482B (en) * | 1980-10-06 | 1985-03-06 | Optical Coating Laboratory Inc | Forming thin film oxide layers using reactive evaporation techniques |
DE3331707A1 (de) * | 1983-09-02 | 1985-03-21 | Leybold-Heraeus GmbH, 5000 Köln | Verfahren und vorrichtung zum reaktiven aufstaeuben von verbindungen von metallen und halbleitern |
US6784033B1 (en) | 1984-02-15 | 2004-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for the manufacture of an insulated gate field effect semiconductor device |
US5780313A (en) | 1985-02-14 | 1998-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating semiconductor device |
US4783361A (en) * | 1984-09-10 | 1988-11-08 | Ovonic Synthetic Materials Company, Inc. | Coated lenses |
US6786997B1 (en) | 1984-11-26 | 2004-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Plasma processing apparatus |
JPH0752718B2 (ja) | 1984-11-26 | 1995-06-05 | 株式会社半導体エネルギー研究所 | 薄膜形成方法 |
US4606929A (en) * | 1984-12-20 | 1986-08-19 | Petrakov Vladimir P | Method of ionized-plasma spraying and apparatus for performing same |
CA1272662A (fr) * | 1985-03-26 | 1990-08-14 | Canon Kabushiki Kaisha | Methode et dispositif de controle du debit de fines particules |
DE3513892A1 (de) * | 1985-04-17 | 1986-10-23 | Plasmainvent AG, Zug | Cr(pfeil abwaerts)2(pfeil abwaerts)o(pfeil abwaerts)3(pfeil abwaerts)-schutzschicht und verfahren zu deren herstellung |
CA1272661A (fr) * | 1985-05-11 | 1990-08-14 | Yuji Chiba | Appareil reacteur |
US6230650B1 (en) | 1985-10-14 | 2001-05-15 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD system under magnetic field |
US6673722B1 (en) | 1985-10-14 | 2004-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD system under magnetic field |
US4875810A (en) * | 1985-10-21 | 1989-10-24 | Canon Kabushiki Kaisha | Apparatus for controlling fine particle flow |
NL8701530A (nl) * | 1987-06-30 | 1989-01-16 | Stichting Fund Ond Material | Werkwijze voor het behandelen van oppervlakken van substraten met behulp van een plasma en reactor voor het uitvoeren van die werkwijze. |
DE4126216B4 (de) * | 1991-08-08 | 2004-03-11 | Unaxis Deutschland Holding Gmbh | Vorrichtung für Dünnschichtverfahren zur Behandlung großflächiger Substrate |
FR2681472B1 (fr) | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
US5421889A (en) * | 1993-06-29 | 1995-06-06 | Tokyo Electron Limited | Method and apparatus for inverting samples in a process |
US5653811A (en) | 1995-07-19 | 1997-08-05 | Chan; Chung | System for the plasma treatment of large area substrates |
FR2748851B1 (fr) * | 1996-05-15 | 1998-08-07 | Commissariat Energie Atomique | Procede de realisation d'une couche mince de materiau semiconducteur |
US6039834A (en) | 1997-03-05 | 2000-03-21 | Applied Materials, Inc. | Apparatus and methods for upgraded substrate processing system with microwave plasma source |
US6146979A (en) * | 1997-05-12 | 2000-11-14 | Silicon Genesis Corporation | Pressurized microbubble thin film separation process using a reusable substrate |
US6291313B1 (en) | 1997-05-12 | 2001-09-18 | Silicon Genesis Corporation | Method and device for controlled cleaving process |
US20070122997A1 (en) * | 1998-02-19 | 2007-05-31 | Silicon Genesis Corporation | Controlled process and resulting device |
US6033974A (en) * | 1997-05-12 | 2000-03-07 | Silicon Genesis Corporation | Method for controlled cleaving process |
US6027988A (en) * | 1997-05-28 | 2000-02-22 | The Regents Of The University Of California | Method of separating films from bulk substrates by plasma immersion ion implantation |
US6548382B1 (en) * | 1997-07-18 | 2003-04-15 | Silicon Genesis Corporation | Gettering technique for wafers made using a controlled cleaving process |
US6103599A (en) * | 1997-07-25 | 2000-08-15 | Silicon Genesis Corporation | Planarizing technique for multilayered substrates |
FR2773261B1 (fr) | 1997-12-30 | 2000-01-28 | Commissariat Energie Atomique | Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions |
US6228176B1 (en) | 1998-02-11 | 2001-05-08 | Silicon Genesis Corporation | Contoured platen design for plasma immerson ion implantation |
US6051073A (en) * | 1998-02-11 | 2000-04-18 | Silicon Genesis Corporation | Perforated shield for plasma immersion ion implantation |
US6274459B1 (en) | 1998-02-17 | 2001-08-14 | Silicon Genesis Corporation | Method for non mass selected ion implant profile control |
US6291326B1 (en) | 1998-06-23 | 2001-09-18 | Silicon Genesis Corporation | Pre-semiconductor process implant and post-process film separation |
US6458723B1 (en) | 1999-06-24 | 2002-10-01 | Silicon Genesis Corporation | High temperature implant apparatus |
US6500732B1 (en) | 1999-08-10 | 2002-12-31 | Silicon Genesis Corporation | Cleaving process to fabricate multilayered substrates using low implantation doses |
US6263941B1 (en) | 1999-08-10 | 2001-07-24 | Silicon Genesis Corporation | Nozzle for cleaving substrates |
US6221740B1 (en) | 1999-08-10 | 2001-04-24 | Silicon Genesis Corporation | Substrate cleaving tool and method |
EP1212787B1 (fr) * | 1999-08-10 | 2014-10-08 | Silicon Genesis Corporation | Procede de clivage permettant de fabriquer des substrats multicouche a l'aide de faibles doses d'implantation |
EP1148037A1 (fr) * | 2000-04-19 | 2001-10-24 | Blösch Holding AG | Procédé pour la fabrication d'une couche antireflective sur glace de montre |
DE10104615A1 (de) * | 2001-02-02 | 2002-08-14 | Bosch Gmbh Robert | Verfahren zur Erzeugung einer Funktionsbeschichtung mit einer HF-ICP-Plasmastrahlquelle |
FR2823599B1 (fr) | 2001-04-13 | 2004-12-17 | Commissariat Energie Atomique | Substrat demomtable a tenue mecanique controlee et procede de realisation |
US8187377B2 (en) * | 2002-10-04 | 2012-05-29 | Silicon Genesis Corporation | Non-contact etch annealing of strained layers |
FR2848336B1 (fr) * | 2002-12-09 | 2005-10-28 | Commissariat Energie Atomique | Procede de realisation d'une structure contrainte destinee a etre dissociee |
FR2856844B1 (fr) * | 2003-06-24 | 2006-02-17 | Commissariat Energie Atomique | Circuit integre sur puce de hautes performances |
FR2857953B1 (fr) | 2003-07-21 | 2006-01-13 | Commissariat Energie Atomique | Structure empilee, et procede pour la fabriquer |
FR2861497B1 (fr) * | 2003-10-28 | 2006-02-10 | Soitec Silicon On Insulator | Procede de transfert catastrophique d'une couche fine apres co-implantation |
US7354815B2 (en) * | 2003-11-18 | 2008-04-08 | Silicon Genesis Corporation | Method for fabricating semiconductor devices using strained silicon bearing material |
FR2889887B1 (fr) * | 2005-08-16 | 2007-11-09 | Commissariat Energie Atomique | Procede de report d'une couche mince sur un support |
US9362439B2 (en) * | 2008-05-07 | 2016-06-07 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled shear region |
US7811900B2 (en) * | 2006-09-08 | 2010-10-12 | Silicon Genesis Corporation | Method and structure for fabricating solar cells using a thick layer transfer process |
US8993410B2 (en) | 2006-09-08 | 2015-03-31 | Silicon Genesis Corporation | Substrate cleaving under controlled stress conditions |
US8293619B2 (en) | 2008-08-28 | 2012-10-23 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled propagation |
FR2910179B1 (fr) * | 2006-12-19 | 2009-03-13 | Commissariat Energie Atomique | PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART |
US7678419B2 (en) | 2007-05-11 | 2010-03-16 | Sdc Materials, Inc. | Formation of catalytic regions within porous structures using supercritical phase processing |
FR2922359B1 (fr) * | 2007-10-12 | 2009-12-18 | Commissariat Energie Atomique | Procede de fabrication d'une structure micro-electronique impliquant un collage moleculaire |
US8481449B1 (en) | 2007-10-15 | 2013-07-09 | SDCmaterials, Inc. | Method and system for forming plug and play oxide catalysts |
FR2925221B1 (fr) * | 2007-12-17 | 2010-02-19 | Commissariat Energie Atomique | Procede de transfert d'une couche mince |
US8330126B2 (en) * | 2008-08-25 | 2012-12-11 | Silicon Genesis Corporation | Race track configuration and method for wafering silicon solar substrates |
US8329557B2 (en) * | 2009-05-13 | 2012-12-11 | Silicon Genesis Corporation | Techniques for forming thin films by implantation with reduced channeling |
FR2947098A1 (fr) * | 2009-06-18 | 2010-12-24 | Commissariat Energie Atomique | Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince |
US9126191B2 (en) | 2009-12-15 | 2015-09-08 | SDCmaterials, Inc. | Advanced catalysts for automotive applications |
US8652992B2 (en) | 2009-12-15 | 2014-02-18 | SDCmaterials, Inc. | Pinning and affixing nano-active material |
US8803025B2 (en) * | 2009-12-15 | 2014-08-12 | SDCmaterials, Inc. | Non-plugging D.C. plasma gun |
US8669202B2 (en) | 2011-02-23 | 2014-03-11 | SDCmaterials, Inc. | Wet chemical and plasma methods of forming stable PtPd catalysts |
US9156025B2 (en) | 2012-11-21 | 2015-10-13 | SDCmaterials, Inc. | Three-way catalytic converter using nanoparticles |
US9511352B2 (en) | 2012-11-21 | 2016-12-06 | SDCmaterials, Inc. | Three-way catalytic converter using nanoparticles |
US9586179B2 (en) | 2013-07-25 | 2017-03-07 | SDCmaterials, Inc. | Washcoats and coated substrates for catalytic converters and methods of making and using same |
KR20160074566A (ko) | 2013-10-22 | 2016-06-28 | 에스디씨머티리얼스, 인코포레이티드 | 대형 디젤 연소 엔진용 촉매 디자인 |
EP3068517A4 (fr) | 2013-10-22 | 2017-07-05 | SDCMaterials, Inc. | Compositions pour régénérer des pièges à nox |
EP3119500A4 (fr) | 2014-03-21 | 2017-12-13 | SDC Materials, Inc. | Compositions pour systèmes d'adsorption de nox passive (pna) et leurs procédés de fabrication et d'utilisation |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1033392A (en) * | 1962-06-20 | 1966-06-22 | Atomic Energy Authority Uk | Improvements in or relating to induction coupled plasma generators |
FR1358425A (fr) * | 1963-01-22 | 1964-04-17 | Traitements Electrolytiques & | Perfectionnement au chalumeau à plasma haute fréquence |
GB1275261A (en) * | 1968-06-04 | 1972-05-24 | Atomic Energy Authority Uk | Improvements in or relating to non thermionic cathode slow discharge devices |
BE766345A (fr) * | 1971-04-27 | 1971-09-16 | Universitaire De L Etat A Mons | Dispositif pour fabriquer des couches minces de substances minerales. |
-
1973
- 1973-09-28 FR FR7334821A patent/FR2245779B1/fr not_active Expired
-
1974
- 1974-09-04 CH CH1203474A patent/CH579639A5/xx not_active IP Right Cessation
- 1974-09-09 BE BE1006169A patent/BE819665A/fr unknown
- 1974-09-19 DE DE2444898A patent/DE2444898C2/de not_active Expired
- 1974-09-20 US US05/507,845 patent/US4006340A/en not_active Expired - Lifetime
- 1974-09-25 IT IT69882/74A patent/IT1020867B/it active
- 1974-09-26 GB GB41921/74A patent/GB1478687A/en not_active Expired
- 1974-09-26 NL NL7412748A patent/NL7412748A/xx not_active Application Discontinuation
- 1974-09-27 JP JP11065274A patent/JPS5735269B2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
IT1020867B (it) | 1977-12-30 |
FR2245779A1 (fr) | 1975-04-25 |
US4006340A (en) | 1977-02-01 |
CH579639A5 (fr) | 1976-09-15 |
NL7412748A (nl) | 1975-04-02 |
DE2444898A1 (de) | 1975-04-10 |
GB1478687A (en) | 1977-07-06 |
BE819665A (fr) | 1975-03-10 |
JPS5735269B2 (fr) | 1982-07-28 |
JPS5061470A (fr) | 1975-05-27 |
DE2444898C2 (de) | 1982-04-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |