BE807299A - Procede de realisation de dispositifs a semi-conducteur par croissance epitaxiale - Google Patents
Procede de realisation de dispositifs a semi-conducteur par croissance epitaxialeInfo
- Publication number
- BE807299A BE807299A BE137727A BE137727A BE807299A BE 807299 A BE807299 A BE 807299A BE 137727 A BE137727 A BE 137727A BE 137727 A BE137727 A BE 137727A BE 807299 A BE807299 A BE 807299A
- Authority
- BE
- Belgium
- Prior art keywords
- realization
- semiconductor devices
- epitaxial growth
- epitaxial
- growth
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/10—Controlling or regulating
- C30B19/106—Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US30718972A | 1972-11-16 | 1972-11-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE807299A true BE807299A (fr) | 1974-03-01 |
Family
ID=23188637
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE137727A BE807299A (fr) | 1972-11-16 | 1973-11-14 | Procede de realisation de dispositifs a semi-conducteur par croissance epitaxiale |
Country Status (5)
| Country | Link |
|---|---|
| BE (1) | BE807299A (en:Method) |
| FR (1) | FR2207361A1 (en:Method) |
| IL (1) | IL43627A0 (en:Method) |
| IT (1) | IT996967B (en:Method) |
| NL (1) | NL7315451A (en:Method) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3128395A1 (de) * | 1981-07-17 | 1983-02-03 | Siemens AG, 1000 Berlin und 8000 München | Lumineszenzdiode |
| JPS5922376A (ja) * | 1982-07-28 | 1984-02-04 | Matsushita Electric Ind Co Ltd | 純緑色発光ダイオ−ドおよびその製造方法 |
-
1973
- 1973-11-12 NL NL7315451A patent/NL7315451A/xx unknown
- 1973-11-14 IL IL43627A patent/IL43627A0/xx unknown
- 1973-11-14 BE BE137727A patent/BE807299A/xx unknown
- 1973-11-14 FR FR7340445A patent/FR2207361A1/fr not_active Withdrawn
- 1973-11-14 IT IT70350/73A patent/IT996967B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| IL43627A0 (en) | 1974-03-14 |
| IT996967B (it) | 1975-12-10 |
| FR2207361A1 (en) | 1974-06-14 |
| NL7315451A (en:Method) | 1974-05-20 |
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