BE797275A - Circuit pour ameliorer le fonctionnement d'une memoire semi-conductrice - Google Patents

Circuit pour ameliorer le fonctionnement d'une memoire semi-conductrice

Info

Publication number
BE797275A
BE797275A BE129218A BE129218A BE797275A BE 797275 A BE797275 A BE 797275A BE 129218 A BE129218 A BE 129218A BE 129218 A BE129218 A BE 129218A BE 797275 A BE797275 A BE 797275A
Authority
BE
Belgium
Prior art keywords
improve
circuit
semiconductor memory
semiconductor
memory
Prior art date
Application number
BE129218A
Other languages
English (en)
French (fr)
Inventor
A G F Dingwall
J M Jorgensen
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of BE797275A publication Critical patent/BE797275A/xx

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419Read-write [R-W] circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
  • Read Only Memory (AREA)
BE129218A 1972-03-24 1973-03-23 Circuit pour ameliorer le fonctionnement d'une memoire semi-conductrice BE797275A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US23774972A 1972-03-24 1972-03-24

Publications (1)

Publication Number Publication Date
BE797275A true BE797275A (fr) 1973-07-16

Family

ID=22895003

Family Applications (1)

Application Number Title Priority Date Filing Date
BE129218A BE797275A (fr) 1972-03-24 1973-03-23 Circuit pour ameliorer le fonctionnement d'une memoire semi-conductrice

Country Status (10)

Country Link
US (1) US3714638A (it)
JP (1) JPS545935B2 (it)
AU (1) AU469739B2 (it)
BE (1) BE797275A (it)
CA (1) CA984969A (it)
FR (1) FR2177912B1 (it)
GB (1) GB1423909A (it)
IT (1) IT982562B (it)
NL (1) NL180892C (it)
SE (1) SE378151B (it)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3795859A (en) * 1972-07-03 1974-03-05 Ibm Method and apparatus for determining the electrical characteristics of a memory cell having field effect transistors
GB1401262A (en) * 1973-02-23 1975-07-16 Ibm Data storage apparatus
JPS5088944A (it) * 1973-12-10 1975-07-17
US3967252A (en) * 1974-10-03 1976-06-29 Mostek Corporation Sense AMP for random access memory
US3971004A (en) * 1975-03-13 1976-07-20 Rca Corporation Memory cell with decoupled supply voltage while writing
JPS51113545A (en) * 1975-03-31 1976-10-06 Hitachi Ltd Memory
JPS51127628A (en) * 1975-04-28 1976-11-06 Toshiba Corp Semiconductor memory
JPS51128236A (en) * 1975-04-30 1976-11-09 Nec Corp A memory circuit
JPS583186A (ja) * 1981-06-30 1983-01-08 Fujitsu Ltd スタティック半導体メモリ
JPS60140594A (ja) * 1983-12-28 1985-07-25 Fujitsu Ltd センス回路
JPS60247892A (ja) * 1984-05-22 1985-12-07 Nec Corp スタテイツク型半導体記憶回路
DE3582802D1 (de) * 1985-10-15 1991-06-13 Ibm Leseverstaerker zur verstaerkung von signalen auf einer vorgespannten leitung.
US4768167A (en) * 1986-09-30 1988-08-30 International Business Machines Corporation High speed CMOS latch with alternate data storage and test functions
US4813023A (en) * 1986-10-21 1989-03-14 Brooktree Corporation System employing negative feedback for decreasing the response time of a cell

Also Published As

Publication number Publication date
DE2314994A1 (de) 1973-11-29
GB1423909A (en) 1976-02-04
US3714638A (en) 1973-01-30
CA984969A (en) 1976-03-02
DE2314994B2 (de) 1976-05-26
JPS499147A (it) 1974-01-26
FR2177912B1 (it) 1980-04-30
FR2177912A1 (it) 1973-11-09
NL180892C (nl) 1987-05-04
AU469739B2 (en) 1976-02-26
AU5314173A (en) 1974-09-12
IT982562B (it) 1974-10-21
NL7304118A (it) 1973-09-26
JPS545935B2 (it) 1979-03-23
SE378151B (it) 1975-08-18

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: RCA CORP.

Effective date: 19840323