BE776318A - Dispositif semiconducteur comportant une resistance semiconductrice et procede pour la fabrication d'un tel dispositif - Google Patents
Dispositif semiconducteur comportant une resistance semiconductrice et procede pour la fabrication d'un tel dispositifInfo
- Publication number
- BE776318A BE776318A BE776318A BE776318A BE776318A BE 776318 A BE776318 A BE 776318A BE 776318 A BE776318 A BE 776318A BE 776318 A BE776318 A BE 776318A BE 776318 A BE776318 A BE 776318A
- Authority
- BE
- Belgium
- Prior art keywords
- manufacturing
- semiconductor device
- device including
- semiconductive resistance
- semiconductive
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/061—Gettering-armorphous layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/904—Charge carrier lifetime control
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB5847870 | 1970-12-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE776318A true BE776318A (fr) | 1972-06-06 |
Family
ID=10481719
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE776318A BE776318A (fr) | 1970-12-09 | 1971-12-06 | Dispositif semiconducteur comportant une resistance semiconductrice et procede pour la fabrication d'un tel dispositif |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US3796929A (es) |
| AT (1) | AT330305B (es) |
| AU (1) | AU464038B2 (es) |
| BE (1) | BE776318A (es) |
| BR (1) | BR7108078D0 (es) |
| CH (1) | CH539340A (es) |
| DE (1) | DE2160427B2 (es) |
| ES (1) | ES397739A1 (es) |
| FR (1) | FR2117977B1 (es) |
| NL (1) | NL162246C (es) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE361232B (es) * | 1972-11-09 | 1973-10-22 | Ericsson Telefon Ab L M | |
| US3947866A (en) * | 1973-06-25 | 1976-03-30 | Signetics Corporation | Ion implanted resistor having controlled temperature coefficient and method |
| US3909304A (en) * | 1974-05-03 | 1975-09-30 | Western Electric Co | Method of doping a semiconductor body |
| US3950187A (en) * | 1974-11-15 | 1976-04-13 | Simulation Physics, Inc. | Method and apparatus involving pulsed electron beam processing of semiconductor devices |
| US4002501A (en) * | 1975-06-16 | 1977-01-11 | Rockwell International Corporation | High speed, high yield CMOS/SOS process |
| US4053925A (en) * | 1975-08-07 | 1977-10-11 | Ibm Corporation | Method and structure for controllng carrier lifetime in semiconductor devices |
| US4035823A (en) * | 1975-10-06 | 1977-07-12 | Honeywell Inc. | Stress sensor apparatus |
| US4069068A (en) * | 1976-07-02 | 1978-01-17 | International Business Machines Corporation | Semiconductor fabrication method for improved device yield by minimizing pipes between common conductivity type regions |
| US4092662A (en) * | 1976-09-29 | 1978-05-30 | Honeywell Inc. | Sensistor apparatus |
| US4164668A (en) * | 1977-05-12 | 1979-08-14 | International Business Machines Corporation | Method of correcting the voltage coefficient of resistors implanted or diffused in a semiconductor substrate |
| US4249962A (en) * | 1979-09-11 | 1981-02-10 | Western Electric Company, Inc. | Method of removing contaminating impurities from device areas in a semiconductor wafer |
| US4432008A (en) * | 1980-07-21 | 1984-02-14 | The Board Of Trustees Of The Leland Stanford Junior University | Gold-doped IC resistor region |
| US4391651A (en) * | 1981-10-15 | 1983-07-05 | The United States Of America As Represented By The Secretary Of The Navy | Method of forming a hyperabrupt interface in a GaAs substrate |
| FR2534415A1 (fr) * | 1982-10-07 | 1984-04-13 | Cii Honeywell Bull | Procede de fabrication de resistances electriques dans un materiau semi-conducteur polycristallin et dispositif a circuits integres resultant |
| WO1985000694A1 (en) * | 1983-07-25 | 1985-02-14 | American Telephone & Telegraph Company | Shallow-junction semiconductor devices |
| US4603471A (en) * | 1984-09-06 | 1986-08-05 | Fairchild Semiconductor Corporation | Method for making a CMOS circuit having a reduced tendency to latch by controlling the band-gap of source and drain regions |
| US4689667A (en) * | 1985-06-11 | 1987-08-25 | Fairchild Semiconductor Corporation | Method of controlling dopant diffusion and dopant electrical activation by implanted inert gas atoms |
| FR2602093B1 (fr) * | 1985-12-27 | 1988-10-14 | Bull Sa | Procede de fabrication d'une resistance electrique par dopage d'un materiau semiconducteur et circuit integre en resultant |
| JPS63254762A (ja) * | 1987-04-13 | 1988-10-21 | Nissan Motor Co Ltd | Ｃｍｏｓ半導体装置 |
| JPH01308063A (ja) * | 1988-06-07 | 1989-12-12 | Oki Electric Ind Co Ltd | 半導体抵抗素子及びその形成方法 |
| US5286660A (en) * | 1992-12-24 | 1994-02-15 | Motorola, Inc. | Method for doping a semiconductor wafer having a diffusivity enhancement region |
| KR100438771B1 (ko) * | 2001-06-30 | 2004-07-05 | 삼성전자주식회사 | 반도체 장치용 원부자재 품질 보증 및 공정 연계 시스템 |
| WO2004095530A2 (en) * | 2003-03-31 | 2004-11-04 | Tokyo Electron Limited | Adjoining adjacent coatings on an element |
| US8178430B2 (en) | 2009-04-08 | 2012-05-15 | International Business Machines Corporation | N-type carrier enhancement in semiconductors |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3533857A (en) * | 1967-11-29 | 1970-10-13 | Hughes Aircraft Co | Method of restoring crystals damaged by irradiation |
| GB1269359A (en) * | 1968-08-22 | 1972-04-06 | Atomic Energy Authority Uk | Improvements in or relating to semiconductors and methods of doping semiconductors |
| GB1249317A (en) * | 1968-11-19 | 1971-10-13 | Mullard Ltd | Semiconductor devices |
-
1971
- 1971-12-02 AU AU36378/71A patent/AU464038B2/en not_active Expired
- 1971-12-02 US US00204229A patent/US3796929A/en not_active Expired - Lifetime
- 1971-12-04 NL NL7116692.A patent/NL162246C/xx not_active IP Right Cessation
- 1971-12-06 DE DE2160427A patent/DE2160427B2/de active Granted
- 1971-12-06 CH CH1773871A patent/CH539340A/de not_active IP Right Cessation
- 1971-12-06 BE BE776318A patent/BE776318A/xx unknown
- 1971-12-06 BR BR008078/71A patent/BR7108078D0/pt unknown
- 1971-12-06 AT AT1048371A patent/AT330305B/de not_active IP Right Cessation
- 1971-12-07 ES ES397739A patent/ES397739A1/es not_active Expired
- 1971-12-09 FR FR7144222A patent/FR2117977B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL162246C (nl) | 1980-04-15 |
| NL7116692A (es) | 1972-06-13 |
| BR7108078D0 (pt) | 1973-05-29 |
| AU3637871A (en) | 1973-06-07 |
| DE2160427B2 (de) | 1979-02-15 |
| DE2160427A1 (de) | 1972-06-15 |
| ATA1048371A (de) | 1975-09-15 |
| ES397739A1 (es) | 1974-05-16 |
| US3796929A (en) | 1974-03-12 |
| AU464038B2 (en) | 1975-08-14 |
| FR2117977A1 (es) | 1972-07-28 |
| FR2117977B1 (es) | 1976-06-04 |
| CH539340A (de) | 1973-07-15 |
| AT330305B (de) | 1976-06-25 |
| NL162246B (nl) | 1979-11-15 |
| DE2160427C3 (es) | 1979-10-18 |
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