BE763654A - Transistor a effet de champ avec capacite de drain a substrat reduite - Google Patents

Transistor a effet de champ avec capacite de drain a substrat reduite

Info

Publication number
BE763654A
BE763654A BE763654A BE763654A BE763654A BE 763654 A BE763654 A BE 763654A BE 763654 A BE763654 A BE 763654A BE 763654 A BE763654 A BE 763654A BE 763654 A BE763654 A BE 763654A
Authority
BE
Belgium
Prior art keywords
field effect
effect transistor
reduced substrate
drain capacity
substrate drain
Prior art date
Application number
BE763654A
Other languages
English (en)
French (fr)
Inventor
P V Gray
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of BE763654A publication Critical patent/BE763654A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
BE763654A 1970-03-02 1971-03-02 Transistor a effet de champ avec capacite de drain a substrat reduite BE763654A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1568070A 1970-03-02 1970-03-02

Publications (1)

Publication Number Publication Date
BE763654A true BE763654A (fr) 1971-09-02

Family

ID=21772910

Family Applications (1)

Application Number Title Priority Date Filing Date
BE763654A BE763654A (fr) 1970-03-02 1971-03-02 Transistor a effet de champ avec capacite de drain a substrat reduite

Country Status (6)

Country Link
US (1) US3600647A (de)
AU (1) AU2603671A (de)
BE (1) BE763654A (de)
DE (1) DE2109928A1 (de)
FR (1) FR2081635A1 (de)
NL (1) NL7102683A (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5123432B2 (de) * 1971-08-26 1976-07-16
US3892609A (en) * 1971-10-07 1975-07-01 Hughes Aircraft Co Production of mis integrated devices with high inversion voltage to threshold voltage ratios
JPS49105490A (de) * 1973-02-07 1974-10-05
US3855611A (en) * 1973-04-11 1974-12-17 Rca Corp Thyristor devices
JPS5222480A (en) * 1975-08-14 1977-02-19 Nippon Telegr & Teleph Corp <Ntt> Insulating gate field effect transistor
US4090289A (en) * 1976-08-18 1978-05-23 International Business Machines Corporation Method of fabrication for field effect transistors (FETs) having a common channel stopper and FET channel doping with the channel stopper doping self-aligned to the dielectric isolation between FETS
JPS5368581A (en) * 1976-12-01 1978-06-19 Hitachi Ltd Semiconductor device
US4132998A (en) * 1977-08-29 1979-01-02 Rca Corp. Insulated gate field effect transistor having a deep channel portion more highly doped than the substrate
US5191396B1 (en) * 1978-10-13 1995-12-26 Int Rectifier Corp High power mosfet with low on-resistance and high breakdown voltage
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
US4214359A (en) * 1978-12-07 1980-07-29 Bell Telephone Laboratories, Incorporated MOS Devices having buried terminal zones under local oxide regions
US4274105A (en) * 1978-12-29 1981-06-16 International Business Machines Corporation MOSFET Substrate sensitivity control
US4937640A (en) * 1980-11-03 1990-06-26 International Business Machines Corporation Short channel MOSFET
JPS5998557A (ja) * 1982-11-27 1984-06-06 Nissan Motor Co Ltd Ｍｏｓトランジスタ
US4713681A (en) * 1985-05-31 1987-12-15 Harris Corporation Structure for high breakdown PN diode with relatively high surface doping
US5231474A (en) * 1986-03-21 1993-07-27 Advanced Power Technology, Inc. Semiconductor device with doped electrical breakdown control region
US4766094A (en) * 1986-03-21 1988-08-23 Hollinger Theodore G Semiconductor doping process
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL267831A (de) * 1960-08-17
US3241931A (en) * 1963-03-01 1966-03-22 Rca Corp Semiconductor devices
US3378738A (en) * 1965-08-25 1968-04-16 Trw Inc Traveling wave transistor
US3532945A (en) * 1967-08-30 1970-10-06 Fairchild Camera Instr Co Semiconductor devices having a low capacitance junction
US3470390A (en) * 1968-02-02 1969-09-30 Westinghouse Electric Corp Integrated back-to-back diodes to prevent breakdown of mis gate dielectric
US3519897A (en) * 1968-10-31 1970-07-07 Nat Semiconductor Corp Semiconductor surface inversion protection

Also Published As

Publication number Publication date
AU2603671A (en) 1972-09-07
DE2109928A1 (de) 1971-09-30
US3600647A (en) 1971-08-17
NL7102683A (de) 1971-09-06
FR2081635A1 (de) 1971-12-10

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