NL7102683A - - Google Patents
Info
- Publication number
- NL7102683A NL7102683A NL7102683A NL7102683A NL7102683A NL 7102683 A NL7102683 A NL 7102683A NL 7102683 A NL7102683 A NL 7102683A NL 7102683 A NL7102683 A NL 7102683A NL 7102683 A NL7102683 A NL 7102683A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/049—Equivalence and options
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US1568070A | 1970-03-02 | 1970-03-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7102683A true NL7102683A (xx) | 1971-09-06 |
Family
ID=21772910
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7102683A NL7102683A (xx) | 1970-03-02 | 1971-03-01 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3600647A (xx) |
| AU (1) | AU2603671A (xx) |
| BE (1) | BE763654A (xx) |
| DE (1) | DE2109928A1 (xx) |
| FR (1) | FR2081635A1 (xx) |
| NL (1) | NL7102683A (xx) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5123432B2 (xx) * | 1971-08-26 | 1976-07-16 | ||
| US3892609A (en) * | 1971-10-07 | 1975-07-01 | Hughes Aircraft Co | Production of mis integrated devices with high inversion voltage to threshold voltage ratios |
| JPS49105490A (xx) * | 1973-02-07 | 1974-10-05 | ||
| US3855611A (en) * | 1973-04-11 | 1974-12-17 | Rca Corp | Thyristor devices |
| JPS5222480A (en) * | 1975-08-14 | 1977-02-19 | Nippon Telegr & Teleph Corp <Ntt> | Insulating gate field effect transistor |
| US4090289A (en) * | 1976-08-18 | 1978-05-23 | International Business Machines Corporation | Method of fabrication for field effect transistors (FETs) having a common channel stopper and FET channel doping with the channel stopper doping self-aligned to the dielectric isolation between FETS |
| JPS5368581A (en) * | 1976-12-01 | 1978-06-19 | Hitachi Ltd | Semiconductor device |
| US4132998A (en) * | 1977-08-29 | 1979-01-02 | Rca Corp. | Insulated gate field effect transistor having a deep channel portion more highly doped than the substrate |
| US5191396B1 (en) * | 1978-10-13 | 1995-12-26 | Int Rectifier Corp | High power mosfet with low on-resistance and high breakdown voltage |
| JPS5553462A (en) * | 1978-10-13 | 1980-04-18 | Int Rectifier Corp | Mosfet element |
| US4214359A (en) * | 1978-12-07 | 1980-07-29 | Bell Telephone Laboratories, Incorporated | MOS Devices having buried terminal zones under local oxide regions |
| US4274105A (en) * | 1978-12-29 | 1981-06-16 | International Business Machines Corporation | MOSFET Substrate sensitivity control |
| US4937640A (en) * | 1980-11-03 | 1990-06-26 | International Business Machines Corporation | Short channel MOSFET |
| JPS5998557A (ja) * | 1982-11-27 | 1984-06-06 | Nissan Motor Co Ltd | Ｍｏｓトランジスタ |
| US4713681A (en) * | 1985-05-31 | 1987-12-15 | Harris Corporation | Structure for high breakdown PN diode with relatively high surface doping |
| US4766094A (en) * | 1986-03-21 | 1988-08-23 | Hollinger Theodore G | Semiconductor doping process |
| US5231474A (en) * | 1986-03-21 | 1993-07-27 | Advanced Power Technology, Inc. | Semiconductor device with doped electrical breakdown control region |
| US5869371A (en) * | 1995-06-07 | 1999-02-09 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of mos-gated power devices |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL267831A (xx) * | 1960-08-17 | |||
| US3241931A (en) * | 1963-03-01 | 1966-03-22 | Rca Corp | Semiconductor devices |
| US3378738A (en) * | 1965-08-25 | 1968-04-16 | Trw Inc | Traveling wave transistor |
| US3532945A (en) * | 1967-08-30 | 1970-10-06 | Fairchild Camera Instr Co | Semiconductor devices having a low capacitance junction |
| US3470390A (en) * | 1968-02-02 | 1969-09-30 | Westinghouse Electric Corp | Integrated back-to-back diodes to prevent breakdown of mis gate dielectric |
| US3519897A (en) * | 1968-10-31 | 1970-07-07 | Nat Semiconductor Corp | Semiconductor surface inversion protection |
-
1970
- 1970-03-02 US US15680A patent/US3600647A/en not_active Expired - Lifetime
-
1971
- 1971-03-01 NL NL7102683A patent/NL7102683A/xx unknown
- 1971-03-02 BE BE763654A patent/BE763654A/xx unknown
- 1971-03-02 DE DE19712109928 patent/DE2109928A1/de active Pending
- 1971-03-02 AU AU26036/71A patent/AU2603671A/en not_active Expired
- 1971-03-02 FR FR7107175A patent/FR2081635A1/fr not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| FR2081635A1 (xx) | 1971-12-10 |
| BE763654A (fr) | 1971-09-02 |
| AU2603671A (en) | 1972-09-07 |
| US3600647A (en) | 1971-08-17 |
| DE2109928A1 (de) | 1971-09-30 |