BE712551A - - Google Patents

Info

Publication number
BE712551A
BE712551A BE712551DA BE712551A BE 712551 A BE712551 A BE 712551A BE 712551D A BE712551D A BE 712551DA BE 712551 A BE712551 A BE 712551A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=24508770&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=BE712551(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed filed Critical
Publication of BE712551A publication Critical patent/BE712551A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/113—Nitrides of boron or aluminum or gallium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/114—Nitrides of silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/957—Making metal-insulator-metal device

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Light Receiving Elements (AREA)
BE712551D 1967-03-27 1968-03-21 BE712551A (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US62605667A 1967-03-27 1967-03-27

Publications (1)

Publication Number Publication Date
BE712551A true BE712551A (es) 1968-07-31

Family

ID=24508770

Family Applications (1)

Application Number Title Priority Date Filing Date
BE712551D BE712551A (es) 1967-03-27 1968-03-21

Country Status (7)

Country Link
US (1) US3475234A (es)
BE (1) BE712551A (es)
DE (1) DE1764056C2 (es)
FR (1) FR1559352A (es)
GB (1) GB1219986A (es)
NL (1) NL151839B (es)
SE (1) SE364142B (es)

Families Citing this family (89)

* Cited by examiner, † Cited by third party
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US3544399A (en) * 1966-10-26 1970-12-01 Hughes Aircraft Co Insulated gate field-effect transistor (igfet) with semiconductor gate electrode
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USRE31580E (en) * 1967-06-08 1984-05-01 U.S. Philips Corporation Insulated gate field-effect transistor comprising a mesa channel and a thicker surrounding oxide
USRE30251E (en) * 1967-06-08 1980-04-08 U.S. Philips Corporation Semiconductor device comprising an insulated gate field effect transistor and method of manufacturing the same
US3676921A (en) * 1967-06-08 1972-07-18 Philips Corp Semiconductor device comprising an insulated gate field effect transistor and method of manufacturing the same
NL162250C (nl) * 1967-11-21 1980-04-15 Philips Nv Halfgeleiderinrichting met een halfgeleiderlichaam, waarvan aan een hoofdoppervlak het halfgeleideroppervlak plaatselijk met een oxydelaag is bedekt, en werkwijze voor het vervaardigen van planaire halfgeleider- inrichtingen.
US3590272A (en) * 1968-09-25 1971-06-29 Westinghouse Electric Corp Mis solid-state memory elements unitizing stable and reproducible charges in an insulating layer
US3604107A (en) * 1969-04-17 1971-09-14 Collins Radio Co Doped oxide field effect transistors
US3649888A (en) * 1969-05-14 1972-03-14 Itt Dielectric structure for semiconductor device
US3632436A (en) * 1969-07-11 1972-01-04 Rca Corp Contact system for semiconductor devices
US3660735A (en) * 1969-09-10 1972-05-02 Sprague Electric Co Complementary metal insulator silicon transistor pairs
NL96608C (es) * 1969-10-03
US3633078A (en) * 1969-10-24 1972-01-04 Hughes Aircraft Co Stable n-channel tetrode
US3772102A (en) * 1969-10-27 1973-11-13 Gen Electric Method of transferring a desired pattern in silicon to a substrate layer
BE756646A (fr) * 1969-11-07 1971-03-01 Semi Conduttori S P A S G S So Procede pour la fabrication de dispositifs discrets a semi-conducteurs ou de circuits integres, et dispositifs obtenus par sa mise en oeuvre
DE2040180B2 (de) * 1970-01-22 1977-08-25 Intel Corp, Mountain View, Calif. (V.St.A.) Verfahren zur verhinderung von mechanischen bruechen einer duennen, die oberflaeche eines halbleiterkoerpers ueberdeckende isolierschichten ueberziehenden elektrisch leitenden schicht
US3714525A (en) * 1970-03-02 1973-01-30 Gen Electric Field-effect transistors with self registered gate which acts as diffusion mask during formation
US3670403A (en) * 1970-03-19 1972-06-20 Gen Electric Three masking step process for fabricating insulated gate field effect transistors
US4015281A (en) * 1970-03-30 1977-03-29 Hitachi, Ltd. MIS-FETs isolated on common substrate
DE2020531C2 (de) * 1970-04-27 1982-10-21 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung von Silizium-Höchstfrequenz-Planartransistoren
DE2021923B2 (de) * 1970-05-05 1976-07-22 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum herstellen eines feldeffekttransistors mit isolierter gateelektrode
US3755721A (en) * 1970-06-15 1973-08-28 Intel Corp Floating gate solid state storage device and method for charging and discharging same
US3753806A (en) * 1970-09-23 1973-08-21 Motorola Inc Increasing field inversion voltage of metal oxide on silicon integrated circuits
US3724065A (en) * 1970-10-01 1973-04-03 Texas Instruments Inc Fabrication of an insulated gate field effect transistor device
US3745647A (en) * 1970-10-07 1973-07-17 Rca Corp Fabrication of semiconductor devices
JPS4929785B1 (es) * 1970-10-30 1974-08-07
US3700976A (en) * 1970-11-02 1972-10-24 Hughes Aircraft Co Insulated gate field effect transistor adapted for microwave applications
US4646119A (en) * 1971-01-14 1987-02-24 Rca Corporation Charge coupled circuits
US3771217A (en) * 1971-04-16 1973-11-13 Texas Instruments Inc Integrated circuit arrays utilizing discretionary wiring and method of fabricating same
JPS5443356B2 (es) * 1971-06-16 1979-12-19
JPS5432314B1 (es) * 1971-07-14 1979-10-13
US4011653A (en) * 1971-08-23 1977-03-15 Tokyo Shibaura Electric Co., Ltd. Method for manufacturing a semiconductor integrated circuit including an insulating gate type semiconductor transistor
NL161305C (nl) * 1971-11-20 1980-01-15 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderin- richting.
JPS4859781A (es) * 1971-11-25 1973-08-22
JPS5121751B2 (es) * 1971-12-24 1976-07-05
US3747200A (en) * 1972-03-31 1973-07-24 Motorola Inc Integrated circuit fabrication method
DE2314260A1 (de) * 1972-05-30 1973-12-13 Ibm Ladungsgekoppelte halbleiteranordnung und verfahren zu ihrer herstellung
US3873373A (en) * 1972-07-06 1975-03-25 Bryan H Hill Fabrication of a semiconductor device
US3891190A (en) * 1972-07-07 1975-06-24 Intel Corp Integrated circuit structure and method for making integrated circuit structure
US3771218A (en) * 1972-07-13 1973-11-13 Ibm Process for fabricating passivated transistors
JPS4953776A (es) * 1972-09-27 1974-05-24
US3865654A (en) * 1972-11-01 1975-02-11 Ibm Complementary field effect transistor having p doped silicon gates and process for making the same
US3836409A (en) * 1972-12-07 1974-09-17 Fairchild Camera Instr Co Uniplanar ccd structure and method
US3841926A (en) * 1973-01-02 1974-10-15 Ibm Integrated circuit fabrication process
IT999786B (it) * 1973-01-15 1976-03-10 Fairchild Camera Instr Co Procedimento per la fabbricazione di transistori a semiconduttore di ossido metallico e prodotto ottenuto con il procedimento
US3853634A (en) * 1973-05-21 1974-12-10 Fairchild Camera Instr Co Self-aligned implanted barrier two-phase charge coupled devices
US4042953A (en) * 1973-08-01 1977-08-16 Micro Power Systems, Inc. High temperature refractory metal contact assembly and multiple layer interconnect structure
US3888706A (en) * 1973-08-06 1975-06-10 Rca Corp Method of making a compact guard-banded mos integrated circuit device using framelike diffusion-masking structure
GB1447675A (en) * 1973-11-23 1976-08-25 Mullard Ltd Semiconductor devices
US3947298A (en) * 1974-01-25 1976-03-30 Raytheon Company Method of forming junction regions utilizing R.F. sputtering
DE2445030C2 (de) * 1974-09-20 1982-09-02 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen eines integrierten MOS-Feldeffekttransistors mit einem elektrisch isolierten schwebenden Gate und einem Steuergate und Verwendung des Verfahrens zur Herstellung eines programmierbaren Festwertspeichers
JPS5193874A (en) * 1975-02-15 1976-08-17 Handotaisochino seizohoho
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US3974003A (en) * 1975-08-25 1976-08-10 Ibm Chemical vapor deposition of dielectric films containing Al, N, and Si
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IT1110843B (it) * 1978-02-27 1986-01-06 Rca Corp Contatto affondato per dispositivi mos di tipo complementare
US4148133A (en) * 1978-05-08 1979-04-10 Sperry Rand Corporation Polysilicon mask for etching thick insulator
US4192059A (en) * 1978-06-06 1980-03-11 Rockwell International Corporation Process for and structure of high density VLSI circuits, having inherently self-aligned gates and contacts for FET devices and conducting lines
US4229755A (en) * 1978-08-15 1980-10-21 Rockwell International Corporation Fabrication of very large scale integrated circuits containing N-channel silicon gate nonvolatile memory elements
JPS606110B2 (ja) * 1978-08-30 1985-02-15 ティーディーケイ株式会社 半導体装置の作製方法
JPS5522878A (en) * 1978-08-30 1980-02-18 Tdk Corp Insulation gate type field effect semiconductor device
JPS597231B2 (ja) * 1978-08-30 1984-02-17 ティーディーケイ株式会社 絶縁ゲイト型電界効果半導体装置の作製方法
US4305973A (en) * 1979-07-24 1981-12-15 Hughes Aircraft Company Laser annealed double conductor structure
US4364167A (en) * 1979-11-28 1982-12-21 General Motors Corporation Programming an IGFET read-only-memory
US4299862A (en) * 1979-11-28 1981-11-10 General Motors Corporation Etching windows in thick dielectric coatings overlying semiconductor device surfaces
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US4363109A (en) * 1980-11-28 1982-12-07 General Motors Corporation Capacitance coupled eeprom
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US4358889A (en) * 1981-05-28 1982-11-16 General Motors Corporation Process for making a late programming enhanced contact ROM
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US4359817A (en) * 1981-05-28 1982-11-23 General Motors Corporation Method for making late programmable read-only memory devices
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US4402128A (en) * 1981-07-20 1983-09-06 Rca Corporation Method of forming closely spaced lines or contacts in semiconductor devices
US4486943A (en) * 1981-12-16 1984-12-11 Inmos Corporation Zero drain overlap and self aligned contact method for MOS devices
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US4547959A (en) * 1983-02-22 1985-10-22 General Motors Corporation Uses for buried contacts in integrated circuits
US4516145A (en) * 1983-08-31 1985-05-07 Storage Technology Partners Reduction of contact resistance in CMOS integrated circuit chips and the product thereof
US4728617A (en) * 1986-11-04 1988-03-01 Intel Corporation Method of fabricating a MOSFET with graded source and drain regions
US5091326A (en) * 1988-03-02 1992-02-25 Advanced Micro Devices, Inc. EPROM element employing self-aligning process
US5293073A (en) * 1989-06-27 1994-03-08 Kabushiki Kaisha Toshiba Electrode structure of a semiconductor device which uses a copper wire as a bonding wire
US5102816A (en) * 1990-03-27 1992-04-07 Sematech, Inc. Staircase sidewall spacer for improved source/drain architecture
US6201283B1 (en) * 1999-09-08 2001-03-13 Trw Inc. Field effect transistor with double sided airbridge
US9484546B2 (en) 2013-05-15 2016-11-01 Universal Display Corporation OLED with compact contact design and self-aligned insulators
US9515181B2 (en) 2014-08-06 2016-12-06 Qualcomm Incorporated Semiconductor device with self-aligned back side features

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE650116A (es) * 1963-07-05 1900-01-01
GB1053104A (es) * 1963-08-20
US3295030A (en) * 1963-12-18 1966-12-27 Signetics Corp Field effect transistor and method
US3355637A (en) * 1965-04-15 1967-11-28 Rca Corp Insulated-gate field effect triode with an insulator having the same atomic spacing as the channel
US3402081A (en) * 1965-06-30 1968-09-17 Ibm Method for controlling the electrical characteristics of a semiconductor surface and product produced thereby
US3427514A (en) * 1966-10-13 1969-02-11 Rca Corp Mos tetrode

Also Published As

Publication number Publication date
FR1559352A (es) 1969-03-07
DE1764056C2 (de) 1984-02-16
US3475234A (en) 1969-10-28
NL151839B (nl) 1976-12-15
NL6804240A (es) 1968-09-30
DE1764056B1 (de) 1972-03-09
SE364142B (es) 1974-02-11
GB1219986A (en) 1971-01-20

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Legal Events

Date Code Title Description
RE20 Patent expired

Owner name: WESTERN ELECTRIC CY INC.

Effective date: 19880321