BE658203A - - Google Patents

Info

Publication number
BE658203A
BE658203A BE658203A BE658203A BE658203A BE 658203 A BE658203 A BE 658203A BE 658203 A BE658203 A BE 658203A BE 658203 A BE658203 A BE 658203A BE 658203 A BE658203 A BE 658203A
Authority
BE
Belgium
Application number
BE658203A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE658203A publication Critical patent/BE658203A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
BE658203A 1964-01-16 1965-04-30 BE658203A (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US338127A US3337783A (en) 1964-01-16 1964-01-16 Shorted emitter controlled rectifier with improved turn-off gain

Publications (1)

Publication Number Publication Date
BE658203A true BE658203A (en:Method) 1965-04-30

Family

ID=23323519

Family Applications (1)

Application Number Title Priority Date Filing Date
BE658203A BE658203A (en:Method) 1964-01-16 1965-04-30

Country Status (4)

Country Link
US (1) US3337783A (en:Method)
BE (1) BE658203A (en:Method)
FR (1) FR1428011A (en:Method)
GB (1) GB1088775A (en:Method)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH436494A (de) * 1966-04-22 1967-05-31 Bbc Brown Boveri & Cie Steuerbares Halbleiterventil
DE1614800C3 (de) * 1967-04-08 1978-06-08 Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm Verfahren zum Herstellen eines Planartransistors mit Tetrodeneigenschaften
US3504242A (en) * 1967-08-11 1970-03-31 Westinghouse Electric Corp Switching power transistor with thyristor overload capacity
CH485329A (de) * 1968-07-22 1970-01-31 Bbc Brown Boveri & Cie Stossspannungsfeste Halbleiterdiode
US3911473A (en) * 1968-10-12 1975-10-07 Philips Corp Improved surface breakdown protection for semiconductor devices
JPS501990B1 (en:Method) * 1970-06-02 1975-01-22
CH526859A (de) * 1970-11-02 1972-08-15 Bbc Brown Boveri & Cie Bistabiles Halbleiterbauelement
US3740621A (en) * 1971-08-30 1973-06-19 Rca Corp Transistor employing variable resistance ballasting means dependent on the magnitude of the emitter current
IT1010445B (it) * 1973-05-29 1977-01-10 Rca Corp Raddrizzatore a semiconduttore com mutabile allo stato di non condu zione per mezzo di una tensione ap plicata all elettrodo di porta del lo stesso
DE2462500C3 (de) * 1974-12-23 1981-09-24 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Thyristor
DE2461207C3 (de) 1974-12-23 1978-03-02 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Thyristor
US4011579A (en) * 1975-04-07 1977-03-08 Hutson Jearld L Semiconductor gate turn-off device
JPS52146570A (en) * 1976-05-31 1977-12-06 Toshiba Corp Reverse conducting thyristor
FR2374742A1 (fr) * 1976-12-20 1978-07-13 Radiotechnique Compelec Transistor multicouche pour tensions elevees et son procede de fabrication
DE2825794C2 (de) * 1978-06-13 1986-03-20 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Abschaltbarer Thyristor
US4673844A (en) * 1985-09-30 1987-06-16 Texas Instruments Incorporated Starter circuit for a fluorescent tube lamp

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2971139A (en) * 1959-06-16 1961-02-07 Fairchild Semiconductor Semiconductor switching device
US3090973A (en) * 1959-11-19 1963-05-28 Intercontinental Mfg Company I Boats
NL260007A (en:Method) * 1960-01-14
NL129185C (en:Method) * 1960-06-10
US3124703A (en) * 1960-06-13 1964-03-10 Figure
US3131311A (en) * 1960-06-21 1964-04-28 Bell Telephone Labor Inc Semiconductor pulse generators
US3123750A (en) * 1961-10-31 1964-03-03 Multiple junction semiconductor device
US3213339A (en) * 1962-07-02 1965-10-19 Westinghouse Electric Corp Semiconductor device for controlling the continuity of multiple electric paths

Also Published As

Publication number Publication date
FR1428011A (fr) 1966-02-11
US3337783A (en) 1967-08-22
GB1088775A (en) 1967-10-25

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