BE658203A - - Google Patents

Info

Publication number
BE658203A
BE658203A BE658203A BE658203A BE658203A BE 658203 A BE658203 A BE 658203A BE 658203 A BE658203 A BE 658203A BE 658203 A BE658203 A BE 658203A BE 658203 A BE658203 A BE 658203A
Authority
BE
Belgium
Application number
BE658203A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE658203A publication Critical patent/BE658203A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
BE658203A 1964-01-16 1965-04-30 BE658203A (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US338127A US3337783A (en) 1964-01-16 1964-01-16 Shorted emitter controlled rectifier with improved turn-off gain

Publications (1)

Publication Number Publication Date
BE658203A true BE658203A (da) 1965-04-30

Family

ID=23323519

Family Applications (1)

Application Number Title Priority Date Filing Date
BE658203A BE658203A (da) 1964-01-16 1965-04-30

Country Status (4)

Country Link
US (1) US3337783A (da)
BE (1) BE658203A (da)
FR (1) FR1428011A (da)
GB (1) GB1088775A (da)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH436494A (de) * 1966-04-22 1967-05-31 Bbc Brown Boveri & Cie Steuerbares Halbleiterventil
DE1614800C3 (de) * 1967-04-08 1978-06-08 Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm Verfahren zum Herstellen eines Planartransistors mit Tetrodeneigenschaften
US3504242A (en) * 1967-08-11 1970-03-31 Westinghouse Electric Corp Switching power transistor with thyristor overload capacity
CH485329A (de) * 1968-07-22 1970-01-31 Bbc Brown Boveri & Cie Stossspannungsfeste Halbleiterdiode
US3911473A (en) * 1968-10-12 1975-10-07 Philips Corp Improved surface breakdown protection for semiconductor devices
JPS501990B1 (da) * 1970-06-02 1975-01-22
CH526859A (de) * 1970-11-02 1972-08-15 Bbc Brown Boveri & Cie Bistabiles Halbleiterbauelement
US3740621A (en) * 1971-08-30 1973-06-19 Rca Corp Transistor employing variable resistance ballasting means dependent on the magnitude of the emitter current
IT1010445B (it) * 1973-05-29 1977-01-10 Rca Corp Raddrizzatore a semiconduttore com mutabile allo stato di non condu zione per mezzo di una tensione ap plicata all elettrodo di porta del lo stesso
DE2462500C3 (de) * 1974-12-23 1981-09-24 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Thyristor
DE2461207C3 (de) 1974-12-23 1978-03-02 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Thyristor
US4011579A (en) * 1975-04-07 1977-03-08 Hutson Jearld L Semiconductor gate turn-off device
JPS52146570A (en) * 1976-05-31 1977-12-06 Toshiba Corp Reverse conducting thyristor
FR2374742A1 (fr) * 1976-12-20 1978-07-13 Radiotechnique Compelec Transistor multicouche pour tensions elevees et son procede de fabrication
DE2825794C2 (de) * 1978-06-13 1986-03-20 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Abschaltbarer Thyristor
US4673844A (en) * 1985-09-30 1987-06-16 Texas Instruments Incorporated Starter circuit for a fluorescent tube lamp

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2971139A (en) * 1959-06-16 1961-02-07 Fairchild Semiconductor Semiconductor switching device
US3090973A (en) * 1959-11-19 1963-05-28 Intercontinental Mfg Company I Boats
NL260007A (da) * 1960-01-14
NL265766A (da) * 1960-06-10
US3124703A (en) * 1960-06-13 1964-03-10 Figure
US3131311A (en) * 1960-06-21 1964-04-28 Bell Telephone Labor Inc Semiconductor pulse generators
US3123750A (en) * 1961-10-31 1964-03-03 Multiple junction semiconductor device
US3213339A (en) * 1962-07-02 1965-10-19 Westinghouse Electric Corp Semiconductor device for controlling the continuity of multiple electric paths

Also Published As

Publication number Publication date
GB1088775A (en) 1967-10-25
FR1428011A (fr) 1966-02-11
US3337783A (en) 1967-08-22

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