BE530566A - - Google Patents
Info
- Publication number
- BE530566A BE530566A BE530566DA BE530566A BE 530566 A BE530566 A BE 530566A BE 530566D A BE530566D A BE 530566DA BE 530566 A BE530566 A BE 530566A
- Authority
- BE
- Belgium
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/38—Devices controlled only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H10P32/00—
-
- H10P50/691—
-
- H10P95/00—
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- H10P95/50—
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Light Receiving Elements (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB20395/53A GB753133A (en) | 1953-07-22 | 1953-07-22 | Improvements in or relating to electric semi-conducting devices |
| GB1250/54A GB753140A (en) | 1953-07-22 | 1953-07-22 | Improvements in or relating to electric semi-conducting devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE530566A true BE530566A (cg-RX-API-DMAC10.html) |
Family
ID=26236590
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE530566D BE530566A (cg-RX-API-DMAC10.html) | 1953-07-22 |
Country Status (4)
| Country | Link |
|---|---|
| BE (1) | BE530566A (cg-RX-API-DMAC10.html) |
| CH (1) | CH331017A (cg-RX-API-DMAC10.html) |
| DE (1) | DE1024640B (cg-RX-API-DMAC10.html) |
| GB (1) | GB753140A (cg-RX-API-DMAC10.html) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1087704B (de) * | 1956-04-03 | 1960-08-25 | Philips Nv | Verfahren zur Herstellung von Halbleiteranordnungen mit wenigstens einem p-n-UEbergang |
| DE1207012B (de) * | 1955-12-24 | 1965-12-16 | Telefunken Patent | Halbleiterbauelement mit einer injizierenden und einer sammelnden Elektrode |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2964435A (en) * | 1957-03-27 | 1960-12-13 | Mc Graw Edison Co | Semiconductor devices and their manufacture |
| DE1243278B (de) * | 1958-03-27 | 1967-06-29 | Siemens Ag | npn- bzw. pnp-Leistungstransistor aus Silizium |
| US3041226A (en) * | 1958-04-02 | 1962-06-26 | Hughes Aircraft Co | Method of preparing semiconductor crystals |
| NL238556A (cg-RX-API-DMAC10.html) * | 1958-04-24 | |||
| NL135875C (cg-RX-API-DMAC10.html) * | 1958-06-09 | 1900-01-01 | ||
| NL229074A (cg-RX-API-DMAC10.html) * | 1958-06-26 | |||
| FR1230933A (cg-RX-API-DMAC10.html) * | 1958-07-26 | 1960-09-21 | ||
| DE1105522B (de) * | 1958-11-12 | 1961-04-27 | Licentia Gmbh | Transistor mit einem scheibenfoermigen Halbleiterkoerper |
| US3225416A (en) * | 1958-11-20 | 1965-12-28 | Int Rectifier Corp | Method of making a transistor containing a multiplicity of depressions |
| NL135006C (cg-RX-API-DMAC10.html) * | 1958-12-24 | |||
| NL247735A (cg-RX-API-DMAC10.html) * | 1959-01-28 | |||
| NL250075A (cg-RX-API-DMAC10.html) | 1959-04-10 | 1900-01-01 | ||
| US2937114A (en) * | 1959-05-29 | 1960-05-17 | Shockley Transistor Corp | Semiconductive device and method |
| US3108914A (en) * | 1959-06-30 | 1963-10-29 | Fairchild Camera Instr Co | Transistor manufacturing process |
| US3041214A (en) * | 1959-09-25 | 1962-06-26 | Clevite Corp | Method of forming junction semiconductive devices having thin layers |
| DE1133038B (de) * | 1960-05-10 | 1962-07-12 | Siemens Ag | Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper undvier Zonen abwechselnden Leitfaehigkeitstyps |
| DE1166379B (de) * | 1961-05-12 | 1964-03-26 | Raytheon Co | Hochfrequenztransistor und Verfahren zu seinem Herstellen |
| DE1208409B (de) * | 1961-05-19 | 1966-01-05 | Int Standard Electric Corp | Elektrisches Halbleiterbauelement mit pn-UEbergang und Verfahren zum Herstellen |
| DE1237694B (de) * | 1961-08-10 | 1967-03-30 | Siemens Ag | Verfahren zum Legieren von elektrischen Halbleiterbauelementen |
| DE1225304B (de) * | 1961-11-16 | 1966-09-22 | Telefunken Patent | Diffusionsverfahren zum Herstellen eines Halbleiterbauelementes |
| DE1280421B (de) * | 1965-08-23 | 1968-10-17 | Halbleiterwerk Frankfurt Oder | Verfahren zum Verringern von Bahnwiderstaenden in Halbleiteranordnungen |
| CH426020A (de) * | 1965-09-08 | 1966-12-15 | Bbc Brown Boveri & Cie | Verfahren zur Herstellung des Halbleiterelementes eines stossspannungsfesten Halbleiterventils, sowie ein mit Hilfe dieses Verfahrens hergestelltes Halbleiterelement |
| DE1281037B (de) * | 1965-09-18 | 1968-10-24 | Telefunken Patent | Verfahren zum Herstellen eines Transistors |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2666814A (en) * | 1949-04-27 | 1954-01-19 | Bell Telephone Labor Inc | Semiconductor translating device |
-
0
- BE BE530566D patent/BE530566A/xx unknown
-
1953
- 1953-07-22 GB GB1250/54A patent/GB753140A/en not_active Expired
-
1954
- 1954-07-21 DE DEI8930A patent/DE1024640B/de active Pending
- 1954-07-22 CH CH331017D patent/CH331017A/de unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1207012B (de) * | 1955-12-24 | 1965-12-16 | Telefunken Patent | Halbleiterbauelement mit einer injizierenden und einer sammelnden Elektrode |
| DE1087704B (de) * | 1956-04-03 | 1960-08-25 | Philips Nv | Verfahren zur Herstellung von Halbleiteranordnungen mit wenigstens einem p-n-UEbergang |
Also Published As
| Publication number | Publication date |
|---|---|
| GB753140A (en) | 1956-07-18 |
| CH331017A (de) | 1958-06-30 |
| DE1024640B (de) | 1958-02-20 |