BE486170A - - Google Patents

Info

Publication number
BE486170A
BE486170A BE486170DA BE486170A BE 486170 A BE486170 A BE 486170A BE 486170D A BE486170D A BE 486170DA BE 486170 A BE486170 A BE 486170A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE486170A publication Critical patent/BE486170A/xx

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/181Low-frequency amplifiers, e.g. audio preamplifiers
    • H03F3/183Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/16Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/16Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
    • H03F3/165Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices with junction-FET's
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)
BE486170D 1948-02-26 BE486170A (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11168A US2524034A (en) 1948-02-26 1948-02-26 Three-electrode circuit element utilizing semiconductor materials

Publications (1)

Publication Number Publication Date
BE486170A true BE486170A (en:Method)

Family

ID=21749158

Family Applications (2)

Application Number Title Priority Date Filing Date
BE484779D BE484779A (en:Method) 1948-02-26
BE486170D BE486170A (en:Method) 1948-02-26

Family Applications Before (1)

Application Number Title Priority Date Filing Date
BE484779D BE484779A (en:Method) 1948-02-26

Country Status (7)

Country Link
US (1) US2524034A (en:Method)
BE (2) BE486170A (en:Method)
CH (2) CH277131A (en:Method)
DE (1) DE966492C (en:Method)
FR (3) FR972207A (en:Method)
GB (2) GB694021A (en:Method)
NL (3) NL85857C (en:Method)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2589658A (en) * 1948-06-17 1952-03-18 Bell Telephone Labor Inc Semiconductor amplifier and electrode structures therefor
US2691750A (en) * 1948-08-14 1954-10-12 Bell Telephone Labor Inc Semiconductor amplifier
US2770762A (en) * 1949-04-01 1956-11-13 Int Standard Electric Corp Crystal triodes
BE527524A (en:Method) * 1949-05-30
US2675509A (en) * 1949-07-26 1954-04-13 Rca Corp High-frequency response semiconductor device
US2647958A (en) * 1949-10-25 1953-08-04 Bell Telephone Labor Inc Voltage and current bias of transistors
US2877284A (en) * 1950-05-23 1959-03-10 Rca Corp Photovoltaic apparatus
BE505814A (en:Method) * 1950-09-14 1900-01-01
US2719190A (en) * 1950-10-27 1955-09-27 Bell Telephone Labor Inc High-efficiency translating circuit
DE1006169B (de) * 1952-02-07 1957-04-11 Siemes & Halske Ag Anordnung zur Umwandlung mechanischer in elektrische Schwingungen
US2953730A (en) * 1952-11-07 1960-09-20 Rca Corp High frequency semiconductor devices
US2734154A (en) * 1953-07-27 1956-02-07 Semiconductor devices
NL190984A (en:Method) * 1953-10-16
DE1047947B (de) * 1953-11-19 1958-12-31 Siemens Ag Gleichrichtende oder verstaerkende Halbleiteranordnung mit durch ein aeusseres elektrisches und/oder magnetisches Feld veraenderlichem Widerstand
DE1021488B (de) * 1954-02-19 1957-12-27 Deutsche Bundespost Halbleiter-Kristallode der Schichtenbauart
BE539001A (en:Method) * 1954-06-15
DE976718C (de) * 1955-01-08 1964-03-19 Siemens Ag Verfahren zum Anloeten elektrischer Anschluesse an eine Metallauflage, die auf einemim wesentlichen einkristallinen Halbleiter aufgebracht ist
US2987659A (en) * 1955-02-15 1961-06-06 Teszner Stanislas Unipolar "field effect" transistor
US2842668A (en) * 1955-05-25 1958-07-08 Ibm High frequency transistor oscillator
US2897377A (en) * 1955-06-20 1959-07-28 Rca Corp Semiconductor surface treatments and devices made thereby
BE558436A (en:Method) * 1956-06-18
DE1166381B (de) * 1956-07-06 1964-03-26 Siemens Ag Verstaerkendes Halbleiterbauelement mit einer isolierten Steuerelektrode ueber einemin Sperrichtung vorgespannten pn-UEbergang und Verfahren zu seinem Herstellen
US2918628A (en) * 1957-01-23 1959-12-22 Otmar M Stuetzer Semiconductor amplifier
DE1207508B (de) * 1957-08-01 1965-12-23 Siemens Ag Halbleiterbauelement mit sperrfreien Kontakt-elektroden und Verfahren zum Herstellen
US3111611A (en) * 1957-09-24 1963-11-19 Ibm Graded energy gap semiconductor devices
US3017548A (en) * 1958-01-20 1962-01-16 Bell Telephone Labor Inc Signal translating device
DE1292253B (de) * 1959-09-26 1969-04-10 Telefunken Patent Halbleiteranordnung
DE1175797B (de) * 1960-12-22 1964-08-13 Standard Elektrik Lorenz Ag Verfahren zum Herstellen von elektrischen Halb-leiterbauelementen
DE1212642C2 (de) * 1962-05-29 1966-10-13 Siemens Ag Halbleiterbauelement, insbesondere Mesatransistor, mit zwei moeglichst kleinflaechigen Elektroden mit parallelen Kanten und Verfahren zum Herstellen
US3298863A (en) * 1964-05-08 1967-01-17 Joseph H Mccusker Method for fabricating thin film transistors
KR102612404B1 (ko) * 2019-03-08 2023-12-13 삼성전자주식회사 반도체 소자 및 그의 제조 방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1251378A (en) * 1917-04-12 1917-12-25 Horace Hurm Crystalline or like detector for electric waves.
CA272437A (en) * 1925-10-22 1927-07-19 Edgar Lilienfeld Julius Electric current control mechanism
US1900018A (en) * 1928-03-28 1933-03-07 Lilienfeld Julius Edgar Device for controlling electric current
GB349584A (en) * 1928-11-27 1931-05-26 Dubilier Condenser Co 1925 Ltd A new or improved electric amplifier
AT130102B (de) * 1929-07-11 1932-11-10 Aeg Kontaktgleichrichter mit zwei durch eine Sperrschicht getrennten Metallelektroden.
US1949383A (en) * 1930-02-13 1934-02-27 Ind Dev Corp Electronic device
BE408194A (en:Method) * 1934-03-02
FR802364A (fr) * 1935-03-09 1936-09-03 Philips Nv Système d'électrodes à conductibilité dissymétrique
GB500342A (en) * 1937-09-18 1939-02-07 British Thomson Houston Co Ltd Improvements relating to dry surface-contact electric rectifiers
BE436972A (en:Method) * 1938-11-15
US2402661A (en) * 1941-03-01 1946-06-25 Bell Telephone Labor Inc Alternating current rectifier
US2402662A (en) * 1941-05-27 1946-06-25 Bell Telephone Labor Inc Light-sensitive electric device

Also Published As

Publication number Publication date
CH273525A (de) 1951-02-15
FR972207A (fr) 1951-01-26
CH277131A (de) 1951-08-15
GB694023A (en) 1953-07-15
BE484779A (en:Method)
US2524034A (en) 1950-10-03
FR978836A (fr) 1951-04-18
FR975245A (fr) 1951-03-02
GB694021A (en) 1953-07-15
NL85857C (en:Method)
DE966492C (de) 1957-08-14
NL85856C (en:Method)
NL84054C (en:Method)

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