BE1002672A3 - Interrupteur electronique comprenant un semi-conducteur photosensible. - Google Patents
Interrupteur electronique comprenant un semi-conducteur photosensible. Download PDFInfo
- Publication number
- BE1002672A3 BE1002672A3 BE9000288A BE9000288A BE1002672A3 BE 1002672 A3 BE1002672 A3 BE 1002672A3 BE 9000288 A BE9000288 A BE 9000288A BE 9000288 A BE9000288 A BE 9000288A BE 1002672 A3 BE1002672 A3 BE 1002672A3
- Authority
- BE
- Belgium
- Prior art keywords
- electronic switch
- photosensitive semiconductor
- weight
- semiconductor
- photosensitive
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 abstract 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 abstract 1
- 229910052793 cadmium Inorganic materials 0.000 abstract 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000460 chlorine Substances 0.000 abstract 1
- 229910052801 chlorine Inorganic materials 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910052711 selenium Inorganic materials 0.000 abstract 1
- 239000011669 selenium Substances 0.000 abstract 1
- 229910052717 sulfur Inorganic materials 0.000 abstract 1
- 239000011593 sulfur Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
- H10F55/205—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive semiconductor devices have no potential barriers, e.g. photoresistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
- H10F55/205—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive semiconductor devices have no potential barriers, e.g. photoresistors
- H10F55/207—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive semiconductor devices have no potential barriers, e.g. photoresistors wherein the electric light source comprises semiconductor devices having potential barriers, e.g. light emitting diodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
- H10F71/1257—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising growth substrates not made of Group II-VI materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
- H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Light Receiving Elements (AREA)
- Photoreceptors In Electrophotography (AREA)
- Photovoltaic Devices (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Liquid Crystal (AREA)
- Manufacture Of Switches (AREA)
- Push-Button Switches (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB898905910A GB8905910D0 (en) | 1989-03-15 | 1989-03-15 | Photosensitive semiconductor,method for making same and electronic switch comprising same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE1002672A3 true BE1002672A3 (fr) | 1991-04-30 |
Family
ID=10653354
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE9000288A BE1002672A3 (fr) | 1989-03-15 | 1990-03-14 | Interrupteur electronique comprenant un semi-conducteur photosensible. |
Country Status (11)
| Country | Link |
|---|---|
| JP (1) | JPH02292874A (enExample) |
| KR (1) | KR900015360A (enExample) |
| AU (1) | AU626391B2 (enExample) |
| BE (1) | BE1002672A3 (enExample) |
| CA (1) | CA2012110A1 (enExample) |
| DE (1) | DE4007979A1 (enExample) |
| ES (1) | ES2021503A6 (enExample) |
| FR (1) | FR2644629A1 (enExample) |
| GB (2) | GB8905910D0 (enExample) |
| IT (1) | IT1241191B (enExample) |
| ZA (1) | ZA902005B (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB9018957D0 (en) * | 1990-08-31 | 1990-10-17 | Champion Spark Plug Europ | Electronic switch comprising a photosensitive semiconductor |
| EP0627554B1 (de) * | 1993-05-28 | 1997-05-28 | Bayerische Motoren Werke Aktiengesellschaft, Patentabteilung AJ-3 | Verteilerloses Zündsystem mit lichtgesteuerten Hochspannungsschaltern |
| RU2721303C1 (ru) * | 2019-12-03 | 2020-05-18 | Самсунг Электроникс Ко., Лтд. | Оптически-управляемый переключатель миллиметрового диапазона со встроенным источником света, основанный на линии передачи с полупроводниковой подложкой |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR83703E (fr) * | 1962-07-28 | 1964-10-02 | Electronique Et D Automatique | Elément logique à photorésistance |
| US4577114A (en) * | 1984-05-17 | 1986-03-18 | The United States Of America As Represented By The Secretary Of The Army | High power optical switch for microsecond switching |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1251226A (enExample) * | 1967-11-20 | 1971-10-27 | ||
| AU499679B2 (en) * | 1976-04-08 | 1979-04-26 | Photon Power Inc | Photovoltaic cell |
| US4388483A (en) * | 1981-09-08 | 1983-06-14 | Monosolar, Inc. | Thin film heterojunction photovoltaic cells and methods of making the same |
-
1989
- 1989-03-15 GB GB898905910A patent/GB8905910D0/en active Pending
-
1990
- 1990-03-13 DE DE4007979A patent/DE4007979A1/de not_active Ceased
- 1990-03-13 ES ES9000751A patent/ES2021503A6/es not_active Expired - Lifetime
- 1990-03-13 FR FR9003161A patent/FR2644629A1/fr active Granted
- 1990-03-14 GB GB9005695A patent/GB2229315B/en not_active Expired - Lifetime
- 1990-03-14 CA CA002012110A patent/CA2012110A1/en not_active Abandoned
- 1990-03-14 IT IT67184A patent/IT1241191B/it active IP Right Grant
- 1990-03-14 BE BE9000288A patent/BE1002672A3/fr not_active IP Right Cessation
- 1990-03-14 KR KR1019900003377A patent/KR900015360A/ko not_active Withdrawn
- 1990-03-14 AU AU51326/90A patent/AU626391B2/en not_active Ceased
- 1990-03-15 JP JP2065516A patent/JPH02292874A/ja active Pending
- 1990-03-15 ZA ZA902005A patent/ZA902005B/xx unknown
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR83703E (fr) * | 1962-07-28 | 1964-10-02 | Electronique Et D Automatique | Elément logique à photorésistance |
| US4577114A (en) * | 1984-05-17 | 1986-03-18 | The United States Of America As Represented By The Secretary Of The Army | High power optical switch for microsecond switching |
Non-Patent Citations (2)
| Title |
|---|
| OPTICS COMMUNICATIONS, vol. 32, no. 3, mars 1980, pages 485-488, Amsterdam, NL; P.S. MAK et al.: "Picosecond optoelectronic switching in CdSO.5SeO.5" * |
| PHYSICAL REVIEW B, vol. 32, no. 12, 15 décembre 1985, pages 8228-8233, The American Physical Society; P.K.C. PILLAI et al.: "Photoconductivity and dark-conductivity studies of CdS1-xSeX(Cu) sintered layers" * |
Also Published As
| Publication number | Publication date |
|---|---|
| ES2021503A6 (es) | 1991-11-01 |
| AU5132690A (en) | 1990-09-20 |
| FR2644629A1 (en) | 1990-09-21 |
| KR900015360A (ko) | 1990-10-26 |
| GB2229315A (en) | 1990-09-19 |
| ZA902005B (en) | 1990-12-28 |
| DE4007979A1 (de) | 1990-09-20 |
| CA2012110A1 (en) | 1990-09-15 |
| IT1241191B (it) | 1993-12-29 |
| AU626391B2 (en) | 1992-07-30 |
| GB2229315B (en) | 1992-12-23 |
| FR2644629B1 (enExample) | 1992-01-03 |
| IT9067184A0 (it) | 1990-03-14 |
| IT9067184A1 (it) | 1991-09-14 |
| GB9005695D0 (en) | 1990-05-09 |
| JPH02292874A (ja) | 1990-12-04 |
| GB8905910D0 (en) | 1989-04-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RE | Patent lapsed |
Owner name: S.A. CHAMPION SPARK PLUG EUROPE Effective date: 20000331 |