GB2229315B - Electronic switch comprising a photosensitive semiconductor - Google Patents

Electronic switch comprising a photosensitive semiconductor

Info

Publication number
GB2229315B
GB2229315B GB9005695A GB9005695A GB2229315B GB 2229315 B GB2229315 B GB 2229315B GB 9005695 A GB9005695 A GB 9005695A GB 9005695 A GB9005695 A GB 9005695A GB 2229315 B GB2229315 B GB 2229315B
Authority
GB
United Kingdom
Prior art keywords
electronic switch
photosensitive semiconductor
photosensitive
semiconductor
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB9005695A
Other versions
GB9005695D0 (en
GB2229315A (en
Inventor
Peter Howson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Champion Spark Plug Europe SA
Original Assignee
Champion Spark Plug Europe SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Champion Spark Plug Europe SA filed Critical Champion Spark Plug Europe SA
Publication of GB9005695D0 publication Critical patent/GB9005695D0/en
Publication of GB2229315A publication Critical patent/GB2229315A/en
Application granted granted Critical
Publication of GB2229315B publication Critical patent/GB2229315B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/161—Semiconductor device sensitive to radiation without a potential-jump or surface barrier, e.g. photoresistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/161—Semiconductor device sensitive to radiation without a potential-jump or surface barrier, e.g. photoresistors
    • H01L31/162—Semiconductor device sensitive to radiation without a potential-jump or surface barrier, e.g. photoresistors the light source being a semiconductor device with at least one potential-jump barrier or surface barrier, e.g. a light emitting diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Light Receiving Elements (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Photovoltaic Devices (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Push-Button Switches (AREA)
  • Manufacture Of Switches (AREA)
  • Liquid Crystal (AREA)
GB9005695A 1989-03-15 1990-03-14 Electronic switch comprising a photosensitive semiconductor Expired - Lifetime GB2229315B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB898905910A GB8905910D0 (en) 1989-03-15 1989-03-15 Photosensitive semiconductor,method for making same and electronic switch comprising same

Publications (3)

Publication Number Publication Date
GB9005695D0 GB9005695D0 (en) 1990-05-09
GB2229315A GB2229315A (en) 1990-09-19
GB2229315B true GB2229315B (en) 1992-12-23

Family

ID=10653354

Family Applications (2)

Application Number Title Priority Date Filing Date
GB898905910A Pending GB8905910D0 (en) 1989-03-15 1989-03-15 Photosensitive semiconductor,method for making same and electronic switch comprising same
GB9005695A Expired - Lifetime GB2229315B (en) 1989-03-15 1990-03-14 Electronic switch comprising a photosensitive semiconductor

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB898905910A Pending GB8905910D0 (en) 1989-03-15 1989-03-15 Photosensitive semiconductor,method for making same and electronic switch comprising same

Country Status (11)

Country Link
JP (1) JPH02292874A (en)
KR (1) KR900015360A (en)
AU (1) AU626391B2 (en)
BE (1) BE1002672A3 (en)
CA (1) CA2012110A1 (en)
DE (1) DE4007979A1 (en)
ES (1) ES2021503A6 (en)
FR (1) FR2644629A1 (en)
GB (2) GB8905910D0 (en)
IT (1) IT1241191B (en)
ZA (1) ZA902005B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9018957D0 (en) * 1990-08-31 1990-10-17 Champion Spark Plug Europ Electronic switch comprising a photosensitive semiconductor
EP0627554B1 (en) * 1993-05-28 1997-05-28 Bayerische Motoren Werke Aktiengesellschaft, Patentabteilung AJ-3 Distributorless ignition system using light-controlled high voltage switches
RU2721303C1 (en) * 2019-12-03 2020-05-18 Самсунг Электроникс Ко., Лтд. Optically-controlled switch of millimeter range with built-in light source, based on transmission line with semiconductor substrate

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1251226A (en) * 1967-11-20 1971-10-27
US4577114A (en) * 1984-05-17 1986-03-18 The United States Of America As Represented By The Secretary Of The Army High power optical switch for microsecond switching

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR83703E (en) * 1962-07-28 1964-10-02 Electronique Et D Automatique Logic photoresistor element
AU499679B2 (en) * 1976-04-08 1979-04-26 Photon Power Inc Photovoltaic cell
US4388483A (en) * 1981-09-08 1983-06-14 Monosolar, Inc. Thin film heterojunction photovoltaic cells and methods of making the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1251226A (en) * 1967-11-20 1971-10-27
US4577114A (en) * 1984-05-17 1986-03-18 The United States Of America As Represented By The Secretary Of The Army High power optical switch for microsecond switching

Also Published As

Publication number Publication date
JPH02292874A (en) 1990-12-04
AU626391B2 (en) 1992-07-30
ZA902005B (en) 1990-12-28
BE1002672A3 (en) 1991-04-30
IT9067184A0 (en) 1990-03-14
FR2644629B1 (en) 1992-01-03
IT1241191B (en) 1993-12-29
KR900015360A (en) 1990-10-26
GB9005695D0 (en) 1990-05-09
CA2012110A1 (en) 1990-09-15
ES2021503A6 (en) 1991-11-01
GB8905910D0 (en) 1989-04-26
GB2229315A (en) 1990-09-19
DE4007979A1 (en) 1990-09-20
IT9067184A1 (en) 1991-09-14
FR2644629A1 (en) 1990-09-21
AU5132690A (en) 1990-09-20

Similar Documents

Publication Publication Date Title
GB2238911B (en) A semiconductor device
GB2226922B (en) Circuit
GB2227362B (en) Electronic devices
EP0409328A3 (en) A switched bridge circuit
EP0413333A3 (en) A superconductized semiconductor device
EP0473439A3 (en) Electronic switch comprising a photosensitive semiconductor
EP0428044A3 (en) Semiconductor device having a housing
EP0472357A3 (en) A semiconductor integrated circuit
GB8904648D0 (en) Electronic devices
GB2229299B (en) A circuit arrangement
EP0423940A3 (en) A logic circuit
EP0451286A4 (en) Integrated circuit device
GB9001033D0 (en) A circuit arrangement comprising a dividing analog-to-converter
GB2236617B (en) A semiconductor device
EP0361801A3 (en) A microwave semiconductor switch
GB9127476D0 (en) A semiconductor integrated circuit
GB2233519B (en) A buffer circuit
GB2229315B (en) Electronic switch comprising a photosensitive semiconductor
EP0454859A4 (en) Semiconducteur integrated circuit
GB2231720B (en) Integrated circuit
GB2229037B (en) A semiconductor device
GB2212326B (en) A semiconductor integrated circuit
GB2236062B (en) Integrated circuit
EP0434328A3 (en) A microwave integrated circuit
GB2233153B (en) Electronic devices

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20020314