IT1241191B - Interruttore elettronico comprendente un semiconduttore fotosensibile - Google Patents

Interruttore elettronico comprendente un semiconduttore fotosensibile

Info

Publication number
IT1241191B
IT1241191B IT67184A IT6718490A IT1241191B IT 1241191 B IT1241191 B IT 1241191B IT 67184 A IT67184 A IT 67184A IT 6718490 A IT6718490 A IT 6718490A IT 1241191 B IT1241191 B IT 1241191B
Authority
IT
Italy
Prior art keywords
electronic switch
switch including
photosensitive semiconductor
photosensitive
semiconductor
Prior art date
Application number
IT67184A
Other languages
English (en)
Italian (it)
Other versions
IT9067184A0 (it
IT9067184A1 (it
Inventor
Peter Howson
Original Assignee
Champion Spark Plug Europ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Champion Spark Plug Europ filed Critical Champion Spark Plug Europ
Publication of IT9067184A0 publication Critical patent/IT9067184A0/it
Publication of IT9067184A1 publication Critical patent/IT9067184A1/it
Application granted granted Critical
Publication of IT1241191B publication Critical patent/IT1241191B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/205—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive semiconductor devices have no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/205—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive semiconductor devices have no potential barriers, e.g. photoresistors
    • H10F55/207—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive semiconductor devices have no potential barriers, e.g. photoresistors wherein the electric light source comprises semiconductor devices having potential barriers, e.g. light emitting diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1257—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising growth substrates not made of Group II-VI materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
IT67184A 1989-03-15 1990-03-14 Interruttore elettronico comprendente un semiconduttore fotosensibile IT1241191B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB898905910A GB8905910D0 (en) 1989-03-15 1989-03-15 Photosensitive semiconductor,method for making same and electronic switch comprising same

Publications (3)

Publication Number Publication Date
IT9067184A0 IT9067184A0 (it) 1990-03-14
IT9067184A1 IT9067184A1 (it) 1991-09-14
IT1241191B true IT1241191B (it) 1993-12-29

Family

ID=10653354

Family Applications (1)

Application Number Title Priority Date Filing Date
IT67184A IT1241191B (it) 1989-03-15 1990-03-14 Interruttore elettronico comprendente un semiconduttore fotosensibile

Country Status (11)

Country Link
JP (1) JPH02292874A (enExample)
KR (1) KR900015360A (enExample)
AU (1) AU626391B2 (enExample)
BE (1) BE1002672A3 (enExample)
CA (1) CA2012110A1 (enExample)
DE (1) DE4007979A1 (enExample)
ES (1) ES2021503A6 (enExample)
FR (1) FR2644629A1 (enExample)
GB (2) GB8905910D0 (enExample)
IT (1) IT1241191B (enExample)
ZA (1) ZA902005B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9018957D0 (en) * 1990-08-31 1990-10-17 Champion Spark Plug Europ Electronic switch comprising a photosensitive semiconductor
EP0627554B1 (de) * 1993-05-28 1997-05-28 Bayerische Motoren Werke Aktiengesellschaft, Patentabteilung AJ-3 Verteilerloses Zündsystem mit lichtgesteuerten Hochspannungsschaltern
RU2721303C1 (ru) * 2019-12-03 2020-05-18 Самсунг Электроникс Ко., Лтд. Оптически-управляемый переключатель миллиметрового диапазона со встроенным источником света, основанный на линии передачи с полупроводниковой подложкой

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR83703E (fr) * 1962-07-28 1964-10-02 Electronique Et D Automatique Elément logique à photorésistance
GB1251226A (enExample) * 1967-11-20 1971-10-27
AU499679B2 (en) * 1976-04-08 1979-04-26 Photon Power Inc Photovoltaic cell
US4388483A (en) * 1981-09-08 1983-06-14 Monosolar, Inc. Thin film heterojunction photovoltaic cells and methods of making the same
US4577114A (en) * 1984-05-17 1986-03-18 The United States Of America As Represented By The Secretary Of The Army High power optical switch for microsecond switching

Also Published As

Publication number Publication date
ES2021503A6 (es) 1991-11-01
AU5132690A (en) 1990-09-20
FR2644629A1 (en) 1990-09-21
KR900015360A (ko) 1990-10-26
GB2229315A (en) 1990-09-19
ZA902005B (en) 1990-12-28
DE4007979A1 (de) 1990-09-20
CA2012110A1 (en) 1990-09-15
AU626391B2 (en) 1992-07-30
GB2229315B (en) 1992-12-23
FR2644629B1 (enExample) 1992-01-03
BE1002672A3 (fr) 1991-04-30
IT9067184A0 (it) 1990-03-14
IT9067184A1 (it) 1991-09-14
GB9005695D0 (en) 1990-05-09
JPH02292874A (ja) 1990-12-04
GB8905910D0 (en) 1989-04-26

Similar Documents

Publication Publication Date Title
FR2644652B1 (fr) Circuit-relais a semi-conducteurs
DE69034198D1 (de) Elektronische Standbildkamera
DE69031452D1 (de) Elektronische Stehbildkamera
DE69120072D1 (de) Elektronische zeitvernierschaltung
DE69026551D1 (de) Integratorschaltung
NO176738C (no) Magnetkrets
GB9018957D0 (en) Electronic switch comprising a photosensitive semiconductor
DE69029468D1 (de) Integrierte Schaltungsanordnung
KR900016210U (ko) 전자스위치
DE69034088D1 (de) Halbleiteranordnung
KR900010759U (ko) 전자스위치 장치
DE69029305D1 (de) Stromkreisunterbrecher
IT1241191B (it) Interruttore elettronico comprendente un semiconduttore fotosensibile
IT1257882B (it) Dispositivo a codice
PT84336A (fr) Dispositif d:actionnement d:un disjoncteur
DE69034071D1 (de) Halbleiteranordnung
FR2640814B1 (fr) Circuit integre presentant un transistor vertical
FI920357A7 (fi) Sähköinen kytkinpiiri
FR2648943B1 (fr) Circuit echantillonneur-bloqueur
DE59010443D1 (de) Integrierte Schaltungsanordnung
DK159390D0 (da) A/(a/b)-kredsloeb
FR2627328B1 (fr) Circuit microelectronique
KR900012416A (ko) 발진기 회로
KR910006190U (ko) 전자사진 복사기의 배지장치
KR910012916U (ko) 전자제품의 스위치 장치

Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19990331