ZA902005B - Electronic switch comprising a photosensitive semiconductor - Google Patents

Electronic switch comprising a photosensitive semiconductor

Info

Publication number
ZA902005B
ZA902005B ZA902005A ZA902005A ZA902005B ZA 902005 B ZA902005 B ZA 902005B ZA 902005 A ZA902005 A ZA 902005A ZA 902005 A ZA902005 A ZA 902005A ZA 902005 B ZA902005 B ZA 902005B
Authority
ZA
South Africa
Prior art keywords
electronic switch
photosensitive semiconductor
photosensitive
semiconductor
switch
Prior art date
Application number
ZA902005A
Other languages
English (en)
Inventor
Peter Howson
Howson Peter
Original Assignee
Champion Spark Plug Europ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Champion Spark Plug Europ filed Critical Champion Spark Plug Europ
Publication of ZA902005B publication Critical patent/ZA902005B/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/205—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive semiconductor devices have no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/205—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive semiconductor devices have no potential barriers, e.g. photoresistors
    • H10F55/207—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive semiconductor devices have no potential barriers, e.g. photoresistors wherein the electric light source comprises semiconductor devices having potential barriers, e.g. light emitting diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1257—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising growth substrates not made of Group II-VI materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
ZA902005A 1989-03-15 1990-03-15 Electronic switch comprising a photosensitive semiconductor ZA902005B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB898905910A GB8905910D0 (en) 1989-03-15 1989-03-15 Photosensitive semiconductor,method for making same and electronic switch comprising same

Publications (1)

Publication Number Publication Date
ZA902005B true ZA902005B (en) 1990-12-28

Family

ID=10653354

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA902005A ZA902005B (en) 1989-03-15 1990-03-15 Electronic switch comprising a photosensitive semiconductor

Country Status (11)

Country Link
JP (1) JPH02292874A (enExample)
KR (1) KR900015360A (enExample)
AU (1) AU626391B2 (enExample)
BE (1) BE1002672A3 (enExample)
CA (1) CA2012110A1 (enExample)
DE (1) DE4007979A1 (enExample)
ES (1) ES2021503A6 (enExample)
FR (1) FR2644629A1 (enExample)
GB (2) GB8905910D0 (enExample)
IT (1) IT1241191B (enExample)
ZA (1) ZA902005B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9018957D0 (en) * 1990-08-31 1990-10-17 Champion Spark Plug Europ Electronic switch comprising a photosensitive semiconductor
EP0627554B1 (de) * 1993-05-28 1997-05-28 Bayerische Motoren Werke Aktiengesellschaft, Patentabteilung AJ-3 Verteilerloses Zündsystem mit lichtgesteuerten Hochspannungsschaltern
RU2721303C1 (ru) * 2019-12-03 2020-05-18 Самсунг Электроникс Ко., Лтд. Оптически-управляемый переключатель миллиметрового диапазона со встроенным источником света, основанный на линии передачи с полупроводниковой подложкой

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR83703E (fr) * 1962-07-28 1964-10-02 Electronique Et D Automatique Elément logique à photorésistance
GB1251226A (enExample) * 1967-11-20 1971-10-27
AU499679B2 (en) * 1976-04-08 1979-04-26 Photon Power Inc Photovoltaic cell
US4388483A (en) * 1981-09-08 1983-06-14 Monosolar, Inc. Thin film heterojunction photovoltaic cells and methods of making the same
US4577114A (en) * 1984-05-17 1986-03-18 The United States Of America As Represented By The Secretary Of The Army High power optical switch for microsecond switching

Also Published As

Publication number Publication date
ES2021503A6 (es) 1991-11-01
AU5132690A (en) 1990-09-20
FR2644629A1 (en) 1990-09-21
KR900015360A (ko) 1990-10-26
GB2229315A (en) 1990-09-19
DE4007979A1 (de) 1990-09-20
CA2012110A1 (en) 1990-09-15
IT1241191B (it) 1993-12-29
AU626391B2 (en) 1992-07-30
GB2229315B (en) 1992-12-23
FR2644629B1 (enExample) 1992-01-03
BE1002672A3 (fr) 1991-04-30
IT9067184A0 (it) 1990-03-14
IT9067184A1 (it) 1991-09-14
GB9005695D0 (en) 1990-05-09
JPH02292874A (ja) 1990-12-04
GB8905910D0 (en) 1989-04-26

Similar Documents

Publication Publication Date Title
GB2238911B (en) A semiconductor device
GB2226922B (en) Circuit
GB2227362B (en) Electronic devices
GB8916451D0 (en) A switched bridge circuit
EP0413333A3 (en) A superconductized semiconductor device
EP0428044A3 (en) Semiconductor device having a housing
GB9018957D0 (en) Electronic switch comprising a photosensitive semiconductor
EP0472357A3 (en) A semiconductor integrated circuit
GB8904648D0 (en) Electronic devices
GB2229299B (en) A circuit arrangement
EP0423940A3 (en) A logic circuit
EP0361801A3 (en) A microwave semiconductor switch
EP0451286A4 (en) Integrated circuit device
GB9001033D0 (en) A circuit arrangement comprising a dividing analog-to-converter
GB2236617B (en) A semiconductor device
GB9127476D0 (en) A semiconductor integrated circuit
GB2233519B (en) A buffer circuit
GB2229315B (en) Electronic switch comprising a photosensitive semiconductor
GB2231720B (en) Integrated circuit
EP0454859A4 (en) Semiconducteur integrated circuit
GB2229037B (en) A semiconductor device
GB2212326B (en) A semiconductor integrated circuit
GB2236062B (en) Integrated circuit
EP0434328A3 (en) A microwave integrated circuit
GB2233153B (en) Electronic devices