AU7611800A - System for monitoring the operating conditions of bearings - Google Patents

System for monitoring the operating conditions of bearings

Info

Publication number
AU7611800A
AU7611800A AU76118/00A AU7611800A AU7611800A AU 7611800 A AU7611800 A AU 7611800A AU 76118/00 A AU76118/00 A AU 76118/00A AU 7611800 A AU7611800 A AU 7611800A AU 7611800 A AU7611800 A AU 7611800A
Authority
AU
Australia
Prior art keywords
bearings
monitoring
operating conditions
conditions
operating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU76118/00A
Other languages
English (en)
Inventor
Mark A. Joki
Kenneth W. Lindsay
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Timken Co
Original Assignee
KENNETH W LINDSAY
MARK A JOKI
Timken Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KENNETH W LINDSAY, MARK A JOKI, Timken Co filed Critical KENNETH W LINDSAY
Priority claimed from PCT/US2000/026230 external-priority patent/WO2001023862A1/fr
Publication of AU7611800A publication Critical patent/AU7611800A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)
  • Non-Volatile Memory (AREA)
AU76118/00A 1999-09-28 2000-09-25 System for monitoring the operating conditions of bearings Abandoned AU7611800A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US40720999A 1999-09-28 1999-09-28
US09407209 1999-09-28
PCT/US2000/026230 WO2001023862A1 (fr) 1999-09-28 2000-09-25 Systeme permettant de controler les conditions de fonctionnement des roulements

Publications (1)

Publication Number Publication Date
AU7611800A true AU7611800A (en) 2001-04-30

Family

ID=23611098

Family Applications (1)

Application Number Title Priority Date Filing Date
AU76118/00A Abandoned AU7611800A (en) 1999-09-28 2000-09-25 System for monitoring the operating conditions of bearings

Country Status (5)

Country Link
EP (1) EP1218928A1 (fr)
JP (1) JP2003510839A (fr)
KR (1) KR20020035620A (fr)
AU (1) AU7611800A (fr)
WO (1) WO2001024237A1 (fr)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10121657B4 (de) * 2001-05-03 2010-02-11 Qimonda Ag Mikroelektronische Struktur mit Wasserstoffbarrierenschicht
JP2002353414A (ja) * 2001-05-22 2002-12-06 Oki Electric Ind Co Ltd 誘電体キャパシタおよびその製造方法
US6734477B2 (en) * 2001-08-08 2004-05-11 Agilent Technologies, Inc. Fabricating an embedded ferroelectric memory cell
US20030036242A1 (en) * 2001-08-16 2003-02-20 Haining Yang Methods of forming metal-comprising materials and capacitor electrodes; and capacitor constructions
EP1298730A3 (fr) * 2001-09-27 2007-12-26 Matsushita Electric Industrial Co., Ltd. Mémoire ferroélectrique et son procédé de fabrication
EP1324392B1 (fr) * 2001-12-28 2009-12-09 STMicroelectronics S.r.l. Condensateur pour des dispositifs intégrés à semi-conducteur
JP2003297956A (ja) * 2002-04-04 2003-10-17 Toshiba Corp 半導体記憶装置及びその製造方法
US20030224536A1 (en) * 2002-06-04 2003-12-04 Andreas Hilliger Contact formation
KR20040003967A (ko) * 2002-07-05 2004-01-13 주식회사 하이닉스반도체 반도체장치의 캐패시터 제조방법
KR100476376B1 (ko) * 2002-07-19 2005-03-16 주식회사 하이닉스반도체 반도체 장치 제조방법
US7550799B2 (en) 2002-11-18 2009-06-23 Fujitsu Microelectronics Limited Semiconductor device and fabrication method of a semiconductor device
JP4332119B2 (ja) * 2002-11-18 2009-09-16 富士通マイクロエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
JP4549947B2 (ja) * 2003-05-27 2010-09-22 パナソニック株式会社 半導体装置
JP2006005234A (ja) * 2004-06-18 2006-01-05 Seiko Epson Corp 半導体装置の製造方法及び半導体装置
JP2006097099A (ja) * 2004-09-30 2006-04-13 Tri Chemical Laboratory Inc 膜形成材料、膜形成方法、及び素子
JP4670612B2 (ja) * 2005-11-30 2011-04-13 Ｔｄｋ株式会社 誘電体素子とその製造方法
KR100790237B1 (ko) * 2005-12-29 2008-01-02 매그나칩 반도체 유한회사 이미지 센서의 금속배선 형성방법
EP2325867A1 (fr) * 2009-11-24 2011-05-25 Nxp B.V. Condensateur constant hautement diélectrique
US10388646B1 (en) * 2018-06-04 2019-08-20 Sandisk Technologies Llc Electrostatic discharge protection devices including a field-induced switching element

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5434102A (en) * 1991-02-25 1995-07-18 Symetrix Corporation Process for fabricating layered superlattice materials and making electronic devices including same
US5523964A (en) * 1994-04-07 1996-06-04 Symetrix Corporation Ferroelectric non-volatile memory unit
JPH07135202A (ja) * 1993-11-09 1995-05-23 Miyagi Oki Denki Kk 半導体装置の製造方法
JP2629586B2 (ja) * 1993-12-16 1997-07-09 日本電気株式会社 半導体デバイスおよびその製造方法
US5663088A (en) * 1995-05-19 1997-09-02 Micron Technology, Inc. Method of forming a Ta2 O5 dielectric layer with amorphous diffusion barrier layer and method of forming a capacitor having a Ta2 O5 dielectric layer and amorphous diffusion barrier layer
JP3113173B2 (ja) * 1995-06-05 2000-11-27 シャープ株式会社 不揮発性ランダムアクセスメモリ及びその製造方法
JPH09260516A (ja) * 1996-03-18 1997-10-03 Sharp Corp 強誘電体薄膜被覆基板及びそれを用いたキャパシタ構造素子
EP0837504A3 (fr) * 1996-08-20 1999-01-07 Ramtron International Corporation Dispositif ferroélectrique partiellement ou complètement encapsulé
JP3641142B2 (ja) * 1997-12-24 2005-04-20 株式会社東芝 強誘電体メモリ
KR100292819B1 (ko) * 1998-07-07 2001-09-17 윤종용 커패시터및그의제조방법

Also Published As

Publication number Publication date
JP2003510839A (ja) 2003-03-18
KR20020035620A (ko) 2002-05-11
WO2001024237A1 (fr) 2001-04-05
EP1218928A1 (fr) 2002-07-03

Similar Documents

Publication Publication Date Title
AU4086999A (en) Monitoring system
AU1219501A (en) Alertness monitoring system
AU5988800A (en) System for ecg monitoring
AU1042201A (en) Deposition monitoring system
AU2217899A (en) Eeg based consciousness-alert monitoring system
EP1026499B8 (fr) Système d'inspection
AU7611800A (en) System for monitoring the operating conditions of bearings
AU2002210762A1 (en) System for monitoring publication of content on the internet
AU3505100A (en) Emergency shutdown test system
AU3741700A (en) Personal alarm monitor system
AU3790700A (en) Intraluminal monitoring system
AU6202800A (en) Performance monitoring system
AU4438800A (en) System for monitoring cables
AU6558200A (en) Method for monitoring an installation
AU6488600A (en) On-site environment monitoring system
AU2469199A (en) Monitor suspension system
AU1304300A (en) Monitoring system
AU2491000A (en) Universal mounting system
GB2359369B (en) Monitoring system
AU4295299A (en) Lubrication system
AU7470200A (en) Turbo-nozzle monitor system for dispersant application
AU2254301A (en) Monitoring seal system
AU2001278851A1 (en) System of monitoring bearing performance
AU5550000A (en) Monitoring system
AU4607500A (en) Monitoring system

Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase