AU7582391A - High speed logic and memory family using ring segment buffer - Google Patents
High speed logic and memory family using ring segment bufferInfo
- Publication number
- AU7582391A AU7582391A AU75823/91A AU7582391A AU7582391A AU 7582391 A AU7582391 A AU 7582391A AU 75823/91 A AU75823/91 A AU 75823/91A AU 7582391 A AU7582391 A AU 7582391A AU 7582391 A AU7582391 A AU 7582391A
- Authority
- AU
- Australia
- Prior art keywords
- high speed
- ring segment
- speed logic
- segment buffer
- memory family
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/01—Modifications for accelerating switching
- H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
- H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
- H03K19/09448—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET in combination with bipolar transistors [BIMOS]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
- H03K19/0948—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
- H03K3/03—Astable circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356104—Bistable circuits using complementary field-effect transistors
- H03K3/356113—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit
- H03K3/356147—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit using pass gates
- H03K3/356156—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit using pass gates with synchronous operation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
- H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/90—Masterslice integrated circuits
- H10D84/998—Input and output buffer/driver structures
Landscapes
- Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Logic Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Pulse Circuits (AREA)
- Semiconductor Memories (AREA)
- Manipulation Of Pulses (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/497,103 US5030853A (en) | 1990-03-21 | 1990-03-21 | High speed logic and memory family using ring segment buffer |
| US497103 | 1990-03-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU7582391A true AU7582391A (en) | 1991-10-21 |
Family
ID=23975476
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU75823/91A Abandoned AU7582391A (en) | 1990-03-21 | 1991-03-20 | High speed logic and memory family using ring segment buffer |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5030853A (show.php) |
| EP (1) | EP0521976A1 (show.php) |
| JP (2) | JPH05505291A (show.php) |
| AU (1) | AU7582391A (show.php) |
| CA (1) | CA2078778A1 (show.php) |
| WO (1) | WO1991015060A1 (show.php) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5233235A (en) * | 1988-08-16 | 1993-08-03 | Siemens Aktiengesellschaft | On-chip intermediate driver for discrete WSI systems |
| US5105105A (en) * | 1990-03-21 | 1992-04-14 | Thunderbird Technologies, Inc. | High speed logic and memory family using ring segment buffer |
| US5247212A (en) * | 1991-01-31 | 1993-09-21 | Thunderbird Technologies, Inc. | Complementary logic input parallel (clip) logic circuit family |
| US5304874A (en) * | 1991-05-31 | 1994-04-19 | Thunderbird Technologies, Inc. | Differential latching inverter and random access memory using same |
| JPH0730378A (ja) * | 1993-07-15 | 1995-01-31 | Mitsubishi Electric Corp | 発振回路 |
| US6569160B1 (en) * | 2000-07-07 | 2003-05-27 | Biosense, Inc. | System and method for detecting electrode-tissue contact |
| US8721550B2 (en) * | 2008-10-30 | 2014-05-13 | Texas Instruments Incorporated | High voltage ultrasound transmitter with symmetrical high and low side drivers comprising stacked transistors and fast discharge |
| US8237471B2 (en) * | 2009-11-25 | 2012-08-07 | International Business Machines Corporation | Circuit with stacked structure and use thereof |
| US10678693B2 (en) * | 2018-11-08 | 2020-06-09 | Insightfulvr, Inc | Logic-executing ring buffer |
| US10776984B2 (en) | 2018-11-08 | 2020-09-15 | Insightfulvr, Inc | Compositor for decoupled rendering |
| CN111091791B (zh) * | 2019-11-15 | 2021-08-24 | 京东方科技集团股份有限公司 | 移位寄存器及其驱动方法、栅极驱动电路 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3378783A (en) * | 1965-12-13 | 1968-04-16 | Rca Corp | Optimized digital amplifier utilizing insulated-gate field-effect transistors |
| US4209713A (en) * | 1975-07-18 | 1980-06-24 | Tokyo Shibaura Electric Co., Ltd. | Semiconductor integrated circuit device in which difficulties caused by parasitic transistors are eliminated |
| US4016431A (en) * | 1975-12-31 | 1977-04-05 | International Business Machines Corporation | Optimal driver for LSI |
| US4185209A (en) * | 1978-02-02 | 1980-01-22 | Rockwell International Corporation | CMOS boolean logic circuit |
| JPS5545207A (en) * | 1978-09-26 | 1980-03-29 | Oki Electric Ind Co Ltd | Complementary mos inverter circuit unit and its production |
| US4394769A (en) * | 1981-06-15 | 1983-07-19 | Hughes Aircraft Company | Dual modulus counter having non-inverting feedback |
| US4560954A (en) * | 1981-12-24 | 1985-12-24 | Texas Instruments Incorporated | Low power oscillator circuit |
| US4541076A (en) * | 1982-05-13 | 1985-09-10 | Storage Technology Corporation | Dual port CMOS random access memory |
| JPH0693626B2 (ja) * | 1983-07-25 | 1994-11-16 | 株式会社日立製作所 | 半導体集積回路装置 |
| JP2564787B2 (ja) * | 1983-12-23 | 1996-12-18 | 富士通株式会社 | ゲートアレー大規模集積回路装置及びその製造方法 |
| JPS60141018A (ja) * | 1983-12-28 | 1985-07-26 | Nec Corp | バイポ−ラ−cmos混成集積回路 |
| JPH0795395B2 (ja) * | 1984-02-13 | 1995-10-11 | 株式会社日立製作所 | 半導体集積回路 |
| JPS60252979A (ja) * | 1984-05-30 | 1985-12-13 | Oki Electric Ind Co Ltd | Cmos入出力回路 |
| EP0194939B1 (en) * | 1985-03-14 | 1992-02-05 | Fujitsu Limited | Semiconductor memory device |
| US4719369A (en) * | 1985-08-14 | 1988-01-12 | Hitachi, Ltd. | Output circuit having transistor monitor for matching output impedance to load impedance |
| JPS62254460A (ja) * | 1986-04-26 | 1987-11-06 | Toshiba Corp | Bi−CMOS論理回路 |
| JPS63239675A (ja) * | 1986-11-27 | 1988-10-05 | Toshiba Corp | 半導体記憶装置 |
| KR880009375A (ko) * | 1987-01-17 | 1988-09-15 | 강진구 | 씨모오스 어드레스 버퍼 |
| JPH01129451A (ja) * | 1987-11-16 | 1989-05-22 | Fujitsu Ltd | 半導体装置 |
| EP0347759B1 (en) * | 1988-06-24 | 1994-08-10 | National Semiconductor Corporation | Speed enhancement technique for CMOS circuits |
| US4871928A (en) * | 1988-08-23 | 1989-10-03 | Motorola Inc. | BICMOS driver circuit with complementary outputs |
-
1990
- 1990-03-21 US US07/497,103 patent/US5030853A/en not_active Expired - Lifetime
-
1991
- 1991-03-20 EP EP91906816A patent/EP0521976A1/en not_active Withdrawn
- 1991-03-20 WO PCT/US1991/001848 patent/WO1991015060A1/en not_active Ceased
- 1991-03-20 AU AU75823/91A patent/AU7582391A/en not_active Abandoned
- 1991-03-20 JP JP3507279A patent/JPH05505291A/ja active Pending
- 1991-03-20 CA CA002078778A patent/CA2078778A1/en not_active Abandoned
-
2001
- 2001-05-14 JP JP2001002928U patent/JP2001000039U/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CA2078778A1 (en) | 1991-09-22 |
| JP2001000039U (ja) | 2001-11-30 |
| WO1991015060A1 (en) | 1991-10-03 |
| EP0521976A1 (en) | 1993-01-13 |
| US5030853B1 (show.php) | 1993-02-16 |
| JPH05505291A (ja) | 1993-08-05 |
| US5030853A (en) | 1991-07-09 |
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