AU6904700A - Hot wall rapid thermal processor - Google Patents
Hot wall rapid thermal processorInfo
- Publication number
- AU6904700A AU6904700A AU69047/00A AU6904700A AU6904700A AU 6904700 A AU6904700 A AU 6904700A AU 69047/00 A AU69047/00 A AU 69047/00A AU 6904700 A AU6904700 A AU 6904700A AU 6904700 A AU6904700 A AU 6904700A
- Authority
- AU
- Australia
- Prior art keywords
- rapid thermal
- hot wall
- thermal processor
- wall rapid
- processor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
- F27B5/06—Details, accessories, or equipment peculiar to furnaces of these types
- F27B5/16—Arrangements of air or gas supply devices
- F27B2005/161—Gas inflow or outflow
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
- F27B5/06—Details, accessories, or equipment peculiar to furnaces of these types
- F27B5/14—Arrangements of heating devices
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D1/00—Casings; Linings; Walls; Roofs
- F27D1/18—Door frames; Doors, lids, removable covers
- F27D1/1858—Doors
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D3/00—Charging; Discharging; Manipulation of charge
- F27D2003/0034—Means for moving, conveying, transporting the charge in the furnace or in the charging facilities
- F27D2003/0075—Charging or discharging vertically, e.g. through a bottom opening
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Furnace Charging Or Discharging (AREA)
- Muffle Furnaces And Rotary Kilns (AREA)
- Furnace Details (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09373894 | 1999-08-12 | ||
US09/373,894 US6300600B1 (en) | 1998-08-12 | 1999-08-12 | Hot wall rapid thermal processor |
US21732100P | 2000-07-07 | 2000-07-07 | |
US60217321 | 2000-08-01 | ||
PCT/US2000/022202 WO2001013054A1 (en) | 1999-08-12 | 2000-08-11 | Hot wall rapid thermal processor |
Publications (1)
Publication Number | Publication Date |
---|---|
AU6904700A true AU6904700A (en) | 2001-03-13 |
Family
ID=26911831
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU69047/00A Abandoned AU6904700A (en) | 1999-08-12 | 2000-08-11 | Hot wall rapid thermal processor |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP1226395A4 (zh) |
JP (1) | JP2003507881A (zh) |
KR (1) | KR20020030093A (zh) |
CN (1) | CN1420978A (zh) |
AU (1) | AU6904700A (zh) |
TW (1) | TW473785B (zh) |
WO (1) | WO2001013054A1 (zh) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7045746B2 (en) | 2003-11-12 | 2006-05-16 | Mattson Technology, Inc. | Shadow-free shutter arrangement and method |
WO2005122231A1 (ja) * | 2004-06-09 | 2005-12-22 | F.T.L. Co., Ltd. | 半導体装置製造用加熱炉及び半導体装置の製造方法 |
DE102005024118B4 (de) * | 2005-05-25 | 2009-05-07 | Mattson Thermal Products Gmbh | Vorrichtung und Verfahren zur Reduktion von Partikeln bei der thermischen Behandlung rotierender Substrate |
CN100378912C (zh) * | 2005-09-28 | 2008-04-02 | 联华电子股份有限公司 | 快速热处理机台 |
JP4849316B2 (ja) * | 2006-02-21 | 2012-01-11 | 株式会社Ihi | 真空成膜装置 |
KR100840015B1 (ko) * | 2007-01-31 | 2008-06-20 | 주식회사 테라세미콘 | 비정질 실리콘 결정화를 위한 열처리 시스템 |
US9097463B2 (en) * | 2010-02-23 | 2015-08-04 | Ngk Insulators, Ltd. | Housing for heating and use method of the same, heating jig and use method of the same, and operation method of heating device |
CN102477546A (zh) * | 2010-11-25 | 2012-05-30 | 绿种子能源科技股份有限公司 | 具有冷却模块的薄膜沉积装置 |
CN102569145B (zh) * | 2010-12-23 | 2014-03-19 | 中芯国际集成电路制造(上海)有限公司 | 快速退火处理中晶片位置校正方法 |
CN102732853B (zh) * | 2011-04-08 | 2014-12-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 腔室装置和具有它的基片处理设备 |
KR101376741B1 (ko) * | 2012-06-22 | 2014-03-26 | (주) 예스티 | 가압 열처리장치 |
KR101396555B1 (ko) * | 2012-06-22 | 2014-05-21 | (주) 예스티 | 단열 성능이 향상된 가압 열처리장치 |
CN105789084B (zh) | 2014-12-17 | 2019-04-23 | 北京北方华创微电子装备有限公司 | 加热腔室以及半导体加工设备 |
CN106298585B (zh) * | 2015-06-03 | 2020-10-16 | 北京北方华创微电子装备有限公司 | 腔室及半导体加工设备 |
WO2018152808A1 (zh) * | 2017-02-25 | 2018-08-30 | 深圳市玖创科技有限公司 | 一种冷却和烧结一体的锂离子电池材料生产设备 |
KR102495317B1 (ko) * | 2018-03-15 | 2023-02-07 | 삼성전자주식회사 | 반도체 소자의 제조장치 및 반도체 소자의 제조방법 |
US10818839B2 (en) | 2018-03-15 | 2020-10-27 | Samsung Electronics Co., Ltd. | Apparatus for and method of fabricating semiconductor devices |
CN110400763B (zh) * | 2018-04-25 | 2022-04-22 | 北京北方华创微电子装备有限公司 | 反应腔室及半导体加工设备 |
JP7073016B2 (ja) * | 2020-01-10 | 2022-05-23 | 中外炉工業株式会社 | クリーン熱処理装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4976996A (en) * | 1987-02-17 | 1990-12-11 | Lam Research Corporation | Chemical vapor deposition reactor and method of use thereof |
US5252807A (en) * | 1990-07-02 | 1993-10-12 | George Chizinsky | Heated plate rapid thermal processor |
US5429498A (en) * | 1991-12-13 | 1995-07-04 | Tokyo Electron Sagami Kabushiki Kaisha | Heat treatment method and apparatus thereof |
JP3292540B2 (ja) * | 1993-03-03 | 2002-06-17 | 東京エレクトロン株式会社 | 熱処理装置 |
KR100297282B1 (ko) * | 1993-08-11 | 2001-10-24 | 마쓰바 구니유키 | 열처리장치 및 열처리방법 |
JPH1074818A (ja) * | 1996-09-02 | 1998-03-17 | Tokyo Electron Ltd | 処理装置 |
US5908292A (en) * | 1997-03-07 | 1999-06-01 | Semitool, Inc. | Semiconductor processing furnace outflow cooling system |
KR100339685B1 (ko) * | 1998-05-02 | 2002-10-25 | 삼성전자 주식회사 | 반도체웨이퍼상의레지스트를베이킹하기위한장치 |
US6086677A (en) * | 1998-06-16 | 2000-07-11 | Applied Materials, Inc. | Dual gas faceplate for a showerhead in a semiconductor wafer processing system |
-
2000
- 2000-08-11 AU AU69047/00A patent/AU6904700A/en not_active Abandoned
- 2000-08-11 JP JP2001517110A patent/JP2003507881A/ja active Pending
- 2000-08-11 WO PCT/US2000/022202 patent/WO2001013054A1/en not_active Application Discontinuation
- 2000-08-11 EP EP00957426A patent/EP1226395A4/en not_active Withdrawn
- 2000-08-11 TW TW089116281A patent/TW473785B/zh not_active IP Right Cessation
- 2000-08-11 CN CN00812823A patent/CN1420978A/zh active Pending
- 2000-08-11 KR KR1020027001786A patent/KR20020030093A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
WO2001013054A1 (en) | 2001-02-22 |
JP2003507881A (ja) | 2003-02-25 |
CN1420978A (zh) | 2003-05-28 |
KR20020030093A (ko) | 2002-04-22 |
EP1226395A1 (en) | 2002-07-31 |
TW473785B (en) | 2002-01-21 |
EP1226395A4 (en) | 2008-02-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |