AU6904700A - Hot wall rapid thermal processor - Google Patents

Hot wall rapid thermal processor

Info

Publication number
AU6904700A
AU6904700A AU69047/00A AU6904700A AU6904700A AU 6904700 A AU6904700 A AU 6904700A AU 69047/00 A AU69047/00 A AU 69047/00A AU 6904700 A AU6904700 A AU 6904700A AU 6904700 A AU6904700 A AU 6904700A
Authority
AU
Australia
Prior art keywords
rapid thermal
hot wall
thermal processor
wall rapid
processor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU69047/00A
Other languages
English (en)
Inventor
Jeffrey M Kowalski
Taiqing Qiu
Christopher T. Ratliff
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML US Inc
Original Assignee
ASML US Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/373,894 external-priority patent/US6300600B1/en
Application filed by ASML US Inc filed Critical ASML US Inc
Publication of AU6904700A publication Critical patent/AU6904700A/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463Cooling of the substrate
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/10Heating of the reaction chamber or the substrate
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/14Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27BFURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B5/00Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
    • F27B5/06Details, accessories, or equipment peculiar to furnaces of these types
    • F27B5/16Arrangements of air or gas supply devices
    • F27B2005/161Gas inflow or outflow
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27BFURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B5/00Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
    • F27B5/06Details, accessories, or equipment peculiar to furnaces of these types
    • F27B5/14Arrangements of heating devices
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27DDETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D1/00Casings; Linings; Walls; Roofs
    • F27D1/18Door frames; Doors, lids, removable covers
    • F27D1/1858Doors
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27DDETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D3/00Charging; Discharging; Manipulation of charge
    • F27D2003/0034Means for moving, conveying, transporting the charge in the furnace or in the charging facilities
    • F27D2003/0075Charging or discharging vertically, e.g. through a bottom opening

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Muffle Furnaces And Rotary Kilns (AREA)
  • Furnace Details (AREA)
  • Furnace Charging Or Discharging (AREA)
AU69047/00A 1999-08-12 2000-08-11 Hot wall rapid thermal processor Abandoned AU6904700A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US09/373,894 US6300600B1 (en) 1998-08-12 1999-08-12 Hot wall rapid thermal processor
US09373894 1999-08-12
US21732100P 2000-07-07 2000-07-07
US60217321 2000-08-01
PCT/US2000/022202 WO2001013054A1 (en) 1999-08-12 2000-08-11 Hot wall rapid thermal processor

Publications (1)

Publication Number Publication Date
AU6904700A true AU6904700A (en) 2001-03-13

Family

ID=26911831

Family Applications (1)

Application Number Title Priority Date Filing Date
AU69047/00A Abandoned AU6904700A (en) 1999-08-12 2000-08-11 Hot wall rapid thermal processor

Country Status (7)

Country Link
EP (1) EP1226395A4 (de)
JP (1) JP2003507881A (de)
KR (1) KR20020030093A (de)
CN (1) CN1420978A (de)
AU (1) AU6904700A (de)
TW (1) TW473785B (de)
WO (1) WO2001013054A1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7045746B2 (en) 2003-11-12 2006-05-16 Mattson Technology, Inc. Shadow-free shutter arrangement and method
JPWO2005122231A1 (ja) * 2004-06-09 2008-04-10 株式会社エフティーエル 半導体装置製造用加熱炉及び半導体装置の製造方法
DE102005024118B4 (de) * 2005-05-25 2009-05-07 Mattson Thermal Products Gmbh Vorrichtung und Verfahren zur Reduktion von Partikeln bei der thermischen Behandlung rotierender Substrate
CN100378912C (zh) * 2005-09-28 2008-04-02 联华电子股份有限公司 快速热处理机台
JP4849316B2 (ja) * 2006-02-21 2012-01-11 株式会社Ihi 真空成膜装置
KR100840015B1 (ko) * 2007-01-31 2008-06-20 주식회사 테라세미콘 비정질 실리콘 결정화를 위한 열처리 시스템
US9097463B2 (en) 2010-02-23 2015-08-04 Ngk Insulators, Ltd. Housing for heating and use method of the same, heating jig and use method of the same, and operation method of heating device
CN102477546A (zh) * 2010-11-25 2012-05-30 绿种子能源科技股份有限公司 具有冷却模块的薄膜沉积装置
CN102569145B (zh) * 2010-12-23 2014-03-19 中芯国际集成电路制造(上海)有限公司 快速退火处理中晶片位置校正方法
CN102732853B (zh) * 2011-04-08 2014-12-17 北京北方微电子基地设备工艺研究中心有限责任公司 腔室装置和具有它的基片处理设备
KR101396555B1 (ko) * 2012-06-22 2014-05-21 (주) 예스티 단열 성능이 향상된 가압 열처리장치
KR101376741B1 (ko) * 2012-06-22 2014-03-26 (주) 예스티 가압 열처리장치
CN105789084B (zh) * 2014-12-17 2019-04-23 北京北方华创微电子装备有限公司 加热腔室以及半导体加工设备
CN106298585B (zh) * 2015-06-03 2020-10-16 北京北方华创微电子装备有限公司 腔室及半导体加工设备
WO2018152808A1 (zh) * 2017-02-25 2018-08-30 深圳市玖创科技有限公司 一种冷却和烧结一体的锂离子电池材料生产设备
US10818839B2 (en) 2018-03-15 2020-10-27 Samsung Electronics Co., Ltd. Apparatus for and method of fabricating semiconductor devices
KR102495317B1 (ko) * 2018-03-15 2023-02-07 삼성전자주식회사 반도체 소자의 제조장치 및 반도체 소자의 제조방법
CN110400763B (zh) * 2018-04-25 2022-04-22 北京北方华创微电子装备有限公司 反应腔室及半导体加工设备
JP7073016B2 (ja) * 2020-01-10 2022-05-23 中外炉工業株式会社 クリーン熱処理装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4976996A (en) * 1987-02-17 1990-12-11 Lam Research Corporation Chemical vapor deposition reactor and method of use thereof
US5252807A (en) * 1990-07-02 1993-10-12 George Chizinsky Heated plate rapid thermal processor
US5429498A (en) * 1991-12-13 1995-07-04 Tokyo Electron Sagami Kabushiki Kaisha Heat treatment method and apparatus thereof
JP3292540B2 (ja) * 1993-03-03 2002-06-17 東京エレクトロン株式会社 熱処理装置
KR100297282B1 (ko) * 1993-08-11 2001-10-24 마쓰바 구니유키 열처리장치 및 열처리방법
JPH1074818A (ja) * 1996-09-02 1998-03-17 Tokyo Electron Ltd 処理装置
US5908292A (en) * 1997-03-07 1999-06-01 Semitool, Inc. Semiconductor processing furnace outflow cooling system
KR100339685B1 (ko) * 1998-05-02 2002-10-25 삼성전자 주식회사 반도체웨이퍼상의레지스트를베이킹하기위한장치
US6086677A (en) * 1998-06-16 2000-07-11 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system

Also Published As

Publication number Publication date
TW473785B (en) 2002-01-21
EP1226395A1 (de) 2002-07-31
JP2003507881A (ja) 2003-02-25
WO2001013054A1 (en) 2001-02-22
KR20020030093A (ko) 2002-04-22
EP1226395A4 (de) 2008-02-20
CN1420978A (zh) 2003-05-28

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase